MARKING TH SOT23-6 MOSFET Search Results

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

LP0801

Abstract: LP0801K1 MOSFET P-Channel sot-23 SOT 23 PD
Contextual Info: LP0801 Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-236AB* Die P8U❋ -16.5V 12Ω -200mA -1.0V LP0801K1 LP0801ND where ❋ = 2-week alpha date code

LP0801

Contextual Info: LP0801 Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* P8U❋ -16.5V 12Ω -200mA -1.0V LP0801K1 where ❋ = 2-week alpha date code

Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) max • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

dmf sot23

Abstract: DMP2160U DMP2160U-7 J-STD-020D
Contextual Info: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 80 mΩ @ VGS = -4.5V • 100 mΩ @ VGS = -2.5V • 140 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS th ≤ 1V

SOT23 PAB

Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) max Features • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max Package -20V 0.9Ω @ VGS = -4.5V 2.0Ω @ VGS = -1.8V SOT23 ID TA = +25°C -430mA -150mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

t6661

Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
Contextual Info: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel

Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • ID RDS(on) max TA = 25°C 0.9Ω @ VGS = -4.5V -430mA 2.0Ω @ VGS = -1.8V -150mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMP2004K-7

Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • ID RDS(on) max TA = 25°C 0.9Ω @ VGS = -4.5V -430mA 2.0Ω @ VGS = -1.8V -150mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery

JESD22-A108C

Abstract: JESD22-A108-C JESD22A-101-B
Contextual Info: Formosa MS N-Channel MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2

DMP3120L

Abstract: DMP3120L-7 J-STD-020D Marking p4s
Contextual Info: DMP3120L P-CHANNEL ENHANCEMENT MODE MOSFET Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 120mΩ @ VGS = -4.5V RDS(ON) < 240mΩ @ VGS = -2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

JESD22-A108C

Abstract: 2N7002K
Contextual Info: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2

Contextual Info: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2

Contextual Info: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.

ST2300

Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23
Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

DIODES K29

Contextual Info: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C • Low Input Capacitance High BVDss rating for power application 600V 160Ω @ VGS = 10V SC59 SOT23 • 70mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

DMN2104L-7

Abstract: J-STD-020D DMN2104L
Contextual Info: DMN2104L N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance • 53mΩ @VGS = 4.5V • 104mΩ @VGS = 2.5V Low Gate Threshold Voltage

SOT-23 MARKING mn1

Abstract: transistor MN1 2N7002A-7 MARKING CODE 13 SOT23 2N7002A J-STD-020D
Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

BSS127S

Abstract: K29 mosfet BSS127 K28 SOT23
Contextual Info: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage

Contextual Info: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package

DMP2160U

Abstract: DMP2160U-7 MOSFET P channel SOT-23
Contextual Info: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 80 mΩ @ VGS = -4.5V • 100 mΩ @ VGS = -2.5V • 140 mΩ @ VGS = -1.8V