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ST2300 Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
ST2300S23RG		VBsemi Electronics Co Ltd	N-Channel 20 V MOSFET in SOT-23 package with 0.028 ohm RDS(on) at 4.5 V VGS, 6 A continuous drain current, and 8.8 nC gate charge, suitable for DC/DC converters and load switches.	Original	PDF
X49ST2-30.000-F18LJDTD		Hang Crystal International	Quartz Crystal Unit X49ST2 in HC-49/S through-hole package, 11x4.6mm, height 3.5 or 2.5mm, 2 leads, fundamental and 3rd overtone modes, frequency range 3.0 to 80.0MHz, RoHS compliant, lead-free, halogen-free.	Original	PDF

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Vishay Intertechnologies TCST2300 - Bulk (Alt: 33C1120)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	TCST2300	Bulk			1	1 $1.36 10 $1.13 100 $1.11 1000 $0.93 10000 $0.86	Get Quote
	TCST2300	Tube		11 Weeks	1,020	1 - 10 - 100 - 1000 - 10000 $0.72	Buy Now
Mouser Electronics	TCST2300		1,045			1 $1.36 10 $1.13 100 $1.13 1000 $1.02 10000 $0.85	Buy Now
Newark	TCST2300	Bulk	384		1	1 $1.43 10 $1.19 100 $1.17 1000 $0.97 10000 $0.90	Buy Now
TTI	TCST2300	Tube			1,020	1 - 10 - 100 - 1000 - 10000 $0.88	Buy Now
ComSIT USA	TCST2300		340			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	TCST2300			7 Weeks	1,020	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies TCST2300. PHOTO INTERRUPTER, TRANSMISSIVE, 3.1MM;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	TCST2300.	Bulk	344		1	1 $2.11 10 $1.72 100 $1.30 1000 $1.02 10000 $0.91	Buy Now
Orion Fans OA300ST-23004 FAN TRAY,230VAC,432X203X44.5MM,190-300CFM,120V, REMOTE, DETACHABLE THERMISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	OA300ST-23004	Bulk			1	1 $202.08 10 $181.87 100 $181.87 1000 $181.87 10000 $181.87	Get Quote
Aspeed Technology Inc AST2300 4th Generation Server Management Processor
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Bristol Electronics	AST2300		119			1 - 10 - 100 - 1000 - 10000 -	Get Quote

ST2300 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ST2300 Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23 Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices	Original	ST2300 ST2300 OT-23 MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23	PDF
ST2300 Abstract: MARKING CODE mosfet marking code 4A n channel power trench MOSFET Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices	Original	ST2300 ST2300 OT-23-3L MARKING CODE mosfet marking code 4A n channel power trench MOSFET	PDF
Contextual Info: ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices	Original	ST2300SRG ST2300SRG OT-23	PDF
Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices	Original	ST2300 ST2300 OT-23-3L	PDF
ST-11M-030 Abstract: ST-02M-C60 DC-140-003 24M05 ST-09G-030 ST-10G-030 ST-13002 ST-06M-260 ST-12M-030 ST-030-130 Contextual Info: DC POWER JACKS EXPLANATION * BUILD YOUR OWN DC POWER JACKS ORDER FORMAT * 4 2 - PART OF PIN DIAMETER SERIES: TREATMENT: DC = DC Power Jacks 0 = Standard Plated 1 - COLOR OPTION - TREATMENT C FEATURE SEQUENTIAL NO. SERIES D EXTEND VERSION Fill in all boxes shown with options selected from below.	Original	ST-18M-L50 ST-200-L10 ST-200-L50 ST-201-L10 ST-201-L50 ST-202-L10 ST-202-L50 ST-12D-L30 ST-12G-L30 ST-12M-L30 ST-11M-030 ST-02M-C60 DC-140-003 24M05 ST-09G-030 ST-10G-030 ST-13002 ST-06M-260 ST-12M-030 ST-030-130	PDF
ir 847p Abstract: 3010P-K Y744 CNY181V crt5000 2106U T1102G T1103G DT1103 64bcn Contextual Info: Tem ic S e m i c o n d u c t o r s Optoisolators C haracteristics V io Package Type VRMS CTR V BRCEO Ip = I0 m A IC=1 m A % V @ Ip and Ic V CEsat ton / toff Ic Rl =100 q V mA mA \|xs ! mA 6 Pin Optoisolators - with Transistor Output ^ 1 4 N 2 5 2i 3750 100020)	OCR Scan		PDF
SOT23-6L Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6 Contextual Info: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices	Original	STN6561 STN6561 OT-23-6L lSTN6561 ST2300 SOT23-6L SOT-23-6L CA SOT 25 marking 6l IDM-10 N -Channel power Sot 6	PDF