DS31586 Search Results

Contextual Info: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = +25°C 75mΩ @ VGS = -4.5V -3.3A 140mΩ @ VGS = -1.8V -2.4A •        -20V Low On-Resistance Very Low Gate Threshold Voltage VGS(th) ≤ 1V

DMP2160U

Abstract: DMP2160U-7 MOSFET P channel SOT-23
Contextual Info: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 80 mΩ @ VGS = -4.5V • 100 mΩ @ VGS = -2.5V • 140 mΩ @ VGS = -1.8V

dmf sot23

Abstract: DMP2160U DMP2160U-7 J-STD-020D
Contextual Info: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 80 mΩ @ VGS = -4.5V • 100 mΩ @ VGS = -2.5V • 140 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS th ≤ 1V

Contextual Info: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = +25°C 75mΩ @ VGS = -4.5V -3.3A 140mΩ @ VGS = -1.8V -2.4A •        -20V Low On-Resistance Very Low Gate Threshold Voltage VGS(th) ≤ 1V

Contextual Info: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 75mΩ @ VGS = -4.5V -3.3A 140mΩ @ VGS = -1.8V -2.4A • -20V • • • • • • • Description and Applications This MOSFET has been designed to minimize the on-state resistance

Contextual Info: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 75mΩ @ VGS = -4.5V -3.3A 140mΩ @ VGS = -1.8V -2.4A • -20V • • • • • • • Description and Applications This MOSFET has been designed to minimize the on-state resistance