MARKING S6V Search Results

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

D1NK60

Abstract: AX057 diode MARKING CODE K6 WMM marking code
Contextual Info: Super Fast Recovery Diode Axial Diode Wtm OUTLINE Package : AX057 D1NK60 U n it-m m W e ig h t 0 .1 9 g T y p 600V 0.8A UJ Feature 02.6 • High Voltage Super FRD • H lf f iF R D • trr=75ns • ® V f=1.3V • trr=75ns • Low V f=1 ,3V 0> Main Use

diode marking f6

Contextual Info: Super Fast Recovery Diode Axial Diode Wtm D1NF60 OUTLINE U nit-m m W eight 0.19g Typ Package : AX057 600V 0.8A UJ Feature • H lff iF R D • H igh V o lta g e S u p e r FRD • ñ S 'f X • trr = 4 0 0 n s • L o w N oise 02.6 • trr= 4 0 0 n s -M -

j172

Abstract: D1NJ10 AX057
Contextual Info: Schottky Barrier Diode Axial Diode W D 1 N J 10 t m O U T L IN E Package : AX057 unit:mm W eight 0.19g Typ t— in o *1 100V 1A 3- Feature UJ • Tj=150°C • Tj=150°C * 2 • f i l R = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away (!>

Contextual Info: PART OBSOLETE DSR6V600P5 6A DIODESTAR RECTIFIER POWERDI 5 NEW PRODUCT OBSOLETE – PART DISCONTINUED Product Summary Features and Benefits • VRRM V IO (A) VF (V) TRR max (nS) QRR typ. (nC) 600 6 3.0 23 135       Description and Applications

Contextual Info: DSR6V600P5 6A DIODESTAR RECTIFIER POWERDI 5 N EW PRODU CT Product Summary Features and Benefits • VRRM V IO (A) VF (V) TRR max (nS) QRR typ. (nC) 600 6 3.0 23 135 • • • • • • Description and Applications This DIODESTAR rectifier has been optimized for Power Factor

Contextual Info: DSR6V600P5 6A DIODESTAR RECTIFIER POWERDI 5 NEW PRODUCT Product Summary Features and Benefits • VRRM V IO (A) VF (V) TRR max (nS) QRR typ. (nC) 600 6 3.0 23 135 • • • • • • Description and Applications This DIODESTAR rectifier has been optimized for Power Factor

BKC600

Abstract: 076V
Contextual Info: B K C INTERNATIONAL 3ÜE D • 117*1103 000G3L0 4 ■ BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 TYPE BKC600 SILICON EPITAXIAL PLANAR DIODE FOR HISH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS PEAK REVERSE VOLTAGE

Contextual Info: T O SH IB A 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2854 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature

3SK127

Contextual Info: TOSHIBA 3SK127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 27 TV TUNER, UHF RF AM PLIFIER APPLICATIONS TV TUNER, UHF M IXER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.03pF Max.

Contextual Info: TOSHIBA 3SK127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 <; k 1 1 1 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER, UHF MIXER APPLICATIONS. • • • r-EE Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.03pF Max.

25640F

Abstract: UDFN-8 CAT25640HU4I-GT3 CAT25640 marking S6V
Contextual Info: CAT25640 64-Kb SPI Serial CMOS EEPROM Description The CAT25640 is a 64−Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64−byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is enabled through a Chip Select (CS) input. In addition, the

25640F

Abstract: CAT25
Contextual Info: CAT25640 64-Kb SPI Serial CMOS EEPROM Description The CAT25640 is a 64−Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64−byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is enabled through a Chip Select (CS) input. In addition, the

Contextual Info: CAT25640 64-Kb SPI Serial CMOS EEPROM Description The CAT25640 is a 64−Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64−byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is enabled through a Chip Select (CS) input. In addition, the

ru4f

Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
Contextual Info: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­

65630

Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
Contextual Info: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­

J18M

Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­

15Y SMD TRANSISTOR

Abstract: SSM2044 free transistor equivalent book 2sc DAC02 PMI SSM-2045 1V120 1N9148 ssm2100 sharp laser diodes SSM2142 SPICE MODEL
Contextual Info: SUMER 13555 BISHOP'S COURT BROOKFIELD, WI. 53005 414/784-6641 ~""-"- IPMI SSM AUDIO PRODUCTS AUDIO HANDBOOK VOLUMEl TABLE OF CONTENTS Precision Monolithics Inc. Introduction . 4