MARKING RY SOT223 Search Results

TRANSISTOR marking ar code

Abstract: PNP Epitaxial Silicon Transistor sot223 pd 223 CZT7120 MARKING CODE 24 TRANSISTOR marking code RY SOT TRANSISTOR MARKING CODE RE marking RY SOT223 PNP TRANSISTOR marking pr IC MARKING CODE TA
Contextual Info: Central LIM E PR RY A N CZT7120 I TM Semiconductor Corp. SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT7120 PNP Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics

C 38 marking code transistor

Abstract: CZT853 417 TRANSISTOR
Contextual Info: RY A IN IM EL PR Central CZT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

10 amp triac

Abstract: CQ223M marking code TC TC-25 amp 600 volt triac CQ223N
Contextual Info: RY A IN IM L RE Central CQ223M CQ223N P TM Semiconductor Corp. 1.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

MARKING 93 SOT-223

Abstract: sot-223 93 marking code 17 surface mount diode marking codes transistors sot-223 pd 223 marking 009 CZT7120 MARKING CODE 24 TRANSISTOR
Contextual Info: Central LIM E PR RY A N CZT7120 I TM Semiconductor Corp. SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT7120 PNP Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics

relay 30A pin configuration

Abstract: sot marking RY
Contextual Info: RY A IN CZDM1003N IM L RE P SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZDM1003N is a 3A, 100V N-channel enhancement-mode silicon MOSFET, designed for motor control and relay driver

CZT953

Abstract: 417 TRANSISTOR
Contextual Info: RY A IN IM EL PR Central CZT953 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT953 type is a high current PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

T8901

Abstract: SOT-39 9013 SOT-89 TS9013 sot39 sot-223 code marking
Contextual Info: $ TAIW AN TS9013 SEMICONDUCTOR pb RoHS 500mA Low Quiescent Current CMOS LDO CO M PLIANCE SO T -89 o 1 2 3 S O T -2 2 3 Pin D e fin itio n : P in D e fin itio n : 2 1. Input 1. G round 2. Input 3. O utpu t 2. G round 3. O utpu t 1 2 3 General Description

Contextual Info: SIEM EN S Verpackungshinweise Packing Information Jede Verpackungseinheit einer regulären Lieferung wird mit Informationen zu Her­ steller, Typ, Menge, Datum, Herstellungs­ ort, Charge, EGB-Empfindlichkeit usw. versehen. Diese Angaben zum Inhalt sind vorgeschrieben und beschreiben in unver­

AT120A

Contextual Info: DISCRETE SEMICONDUCTORS 0ITÂ S y iI T BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Sem iconductors 1998 Oct 30 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes

2SB772P

Abstract: SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA -500 -200 -150 -150 -150 -500 -200 -150 -150 -150 -500 -200 -600 -100 -100 -100 -600 -200 -600

1N6095

Contextual Info: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

Contextual Info: [M U M L H & E ^ S i Final Electrical S pecifications u i LT1118-2.5/LT1118-2.85/LT1118-5 m TECHNOLOGY i_Qw I , Low D ropout, 800m A Source a n d Sink Regulators Fixed 2.5V, 2.85V, 5V O u tp u t q F e b ru a ry 1995 F€ATUR€S DCSCRIPTIOfl • R egulates W hile Sourcing or Sinking Current

Contextual Info: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M MFT1N10E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T

25Q256

Contextual Info: PD-20478 rev. C 04/99 International Iö R Rectifier 20CJQ045 SCHOTTKY RECTIFIER 2 Amp SOT-223 M ajor Ratings and Characteristics Characteristics Description/Features 20CJQ045 Units 2.0 A l F Av Rectan9 ular 45 V RRM VF @ t p = 5^jssine V 390 @ 1 A p k ,T J = 1 25 °C

DIODE SD51

Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Contextual Info: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

P1F sot223

Abstract: SOT-223 P1f PNP marking NY sot-223 on marking RV* P1f marking RV* P1f motorola p1f ON MARKING P1F marking NY sot-223 MARKING P1F
Contextual Info: MOTOROLA Order this document by PZT2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar E p itaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for

transistor CG sot-223

Abstract: ah sot223
Contextual Info: MOTOROLA Order this document by BCP53T1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor BCP53T1 M o to ro la P re ferre d D e vic e This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for

NT 2955 ON transistor

Abstract: Marking 2955 transistor k 4212 fet FT2955E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium P o w er Field E ffe c t T ran sisto r P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M FT2955E M o to ro la P re fe rre d D e v ic e TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM

95ag

Contextual Info: LT1118/LT111825 g - ^W \ L lI lM F A H # LTl 118-2.85/LTl 118-5 TECHNOLOGY Low Low D ro p o u t, 800m A, Source a n d Sink R egulators A d ju s ta b le a n d Fixed 2.5V, 2.85V, 5V O u tp u t Iq , FEATURES DESCFHFTIOn • ■ ■ ■ ■ ■ ■ ■ The LT 1118 fam ily of low dropout regulators has the

42t1

Contextual Info: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS

LP3962

Abstract: LP3965 lp3965-adj SOT223T T0263
Contextual Info: Semiconductor LP3962/LP3965 1.5A Fast Ultra Low Dropout Linear Regulators General Description Features The LP 3962/LP3965 series o f fast ultra low -dropout linear regulators operate from a +2 .5 V to +7.0V input supply. W ide range o f preset output voltage options are available. These

1mo 565

Abstract: lazb LP3964-ADJ lbpb LP3961 LP3964 LP3964ET-ADJ SOT223-5 LAND PATTERN SOT223T
Contextual Info: Semiconductor LP3961/LP3964 800mA Fast Ultra Low Dropout Linear Regulators General Description Features The LP 3961/LP3964 series o f fast ultra low -dropout linear regulators operate from a +2 .5 V to +7.0V input supply. W ide range o f preset output voltage options are available. These

BF720T1

Abstract: SMD310
Contextual Info: MOTOROLA O rder this docum ent by BF720T1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 NPN SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Sym bol Value Unit Collector-Em itter Voltage

Contextual Info: MOTOROLA O rder this docum ent by BF720T1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 NPN SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Sym bol Value Unit Collector-Em itter Voltage