MARKING NT SOT23 Search Results

MARKING NT SOT23

Abstract: KRC244S NT marking
Contextual Info: SEMICONDUCTOR KRC244S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NT No. 1 Item Marking Device Mark NT KRC244S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SA1037KPT SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * NT .019 (0.50) (2) .103 (2.64)

DS357

Abstract: ZRA500F03 ZRA500 ZRA500F02 MARKING 25M SOT23
Contextual Info: PRECISION 5.0 VOLT MICROPOWER ZRA500F02 ZRA500F03 VOLTAGE REFERENCE FEATURES DEVICE DESCRIPTION Sm all o utline SOT23 package. No stabilising capacitor required. Typical Tc70ppm /*C. Typical slope resistance 0.55Q. Industrial tem p era ture range. O perating curre nt 5 0 n A to 5mA.

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

4116 dram

Abstract: Silicon PIN diode high speed pin diagram of ic 4141 2QSP24 MO-137
Contextual Info: PL IA NT Features S oH *R 24Q DTA 2 005 041 CO M • ■ ■ ■ ■ Lead free RoHS compliant* 18 termination channels Incorporates 36 bidirectional Schottkybased diodes Small form factor replaces 18 SOT23 packages ■ ■ Low forward voltage 2 options available

18 SOT23

Abstract: pin diagram of ic 4141
Contextual Info: *R oH S • 24Q DTA 2 005 041 CO M PL IA NT Features ■ ■ ■ ■ Model 2DTA is currently available, although not recommended for new designs. Lead free RoHS compliant* 18 termination channels Incorporates 36 bidirectional Schottkybased diodes Small form factor replaces 18 SOT23

2QSP24

Abstract: MO-137 18 SOT23
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E • 24Q DTA 2 005 041 *R Features ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * 18 termination channels Incorporates 36 bi-directional Schottkybased diodes Small form factor replaces 18 SOT23

4116 DRAM

Abstract: 2QSP24 MO-137 DTA24Q Silicon PIN diode high speed
Contextual Info: *R oH S • ■ 24Q DTA 2 005 041 CO M PL IA NT Features ■ ■ ■ Model 2DTA is obsolete and not recommended for new designs. Lead free RoHS compliant* 18 termination channels Incorporates 36 bidirectional Schottkybased diodes Small form factor replaces 18 SOT23

2SA1037AK

Contextual Info: 2SA1037AK PNP 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -50 -60 -6.0 -150 200 1.6 625 T J ,Tstg -50 -1.0 -60 -50 -6.0 -50 E=-50Vdc, I E= 0 O ) -60 -6.0 WEITRON http://www.weitron.com.tw 1/5 -0.1 u -0.1 u -0.1 u 24-Jul-07 2SA1037AK ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Contextual Info: 2SA1037AK PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value -50 -60 -6.0 -150 200 1.6 625 T J ,Tstg 2SA1037KQ=G3F, 2SA1037AKR=G4F, 2SA1037AKS=G5F -50 -1.0 -60 -50 -6.0 -50 E=-50Vdc, I E= 0 ) -60 -6.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1

2SA1037KQ

Abstract: 2SA1037K-Q 2SA1037AK 2SA1037AKR 2SA1037AKS
Contextual Info: 2SA1037AK PNP 3 1 2 SOT-23 V CEO Value -50 -60 -6.0 -150 200 1.6 625 T J ,Tstg 2SA1037KQ=G3F, 2SA1037AKR=G4F, 2SA1037AKS=G5F -50 -1.0 -60 -50 -6.0 -50 E=-50Vdc, I E= 0 -60 -6.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u 2SA1037AK ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

1N5819 SOD-323

Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1N5817~1N5819 PanJit Part Number: 1N5817~1N5819 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

marking 1A7 SOT-23

Abstract: 1a7 sot-23 96x80 SOD123 S32 mark 3p SOT363
Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1A1~1A7 PanJit Part Number: 1A1~1A7 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129 NO. 24 , Kang Shan North Rd., Kang Shan Town ,

mosfet s72

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • • 0.103(2.60) • 0.056(1.40) 0.047(1.20) • 0.086(2.20) • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.006(0.15)MIN. FEATURES 0.079(2.00) 0.008(0.20) 0.070(1.80)

357T

Abstract: MARKING CODE b48 marking code VE marking B48 diode
Contextual Info: MMBD4448W6 SURFACE MOUNT FAST SWITCHING DIODE ARRAY FEATURES • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA

BAS121

Abstract: BAS121C BAS121A BAS121S
Contextual Info: BAS121/A/C/S SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE VOLTAGE 250 Volts POWER 250 mW FEATURES • High Reverse Blocking Voltage • Extremely Low Reverse Leakage Current • Surface Mount Package Ideally Suited for Automatic Insertion • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: APPROVE SHEET Customer: Customer Part Number: BY127M~EM513 PanJit Part Number: BY127M~EM513 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.12.2005 DATE: APR.12.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

Contextual Info: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026

Contextual Info: 2N7002K 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-23 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns

Contextual Info: BAS121/A/C/S SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE VOLTAGE 250 Volts SOT-23 250 mW POWER Unit：inch mm 0.120(3.04) 0.110(2.80) • Extremely Low Reverse Leakage Current • Surface Mount Package Ideally Suited for Automatic Insertion ‡*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH

Contextual Info: BAS121/A/C/S SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE VOLTAGE 250 Volts POWER SOT-23 250 mW Unit：inch mm 0.120(3.04) 0.110(2.80) • Extremely Low Reverse Leakage Current • Surface Mount Package Ideally Suited for Automatic Insertion 0.103(2.60)

400V 100MA NPN SOT23

Abstract: MMBTA44 eb6 sot23 A44 transistor MARKING A44
Contextual Info: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic

Contextual Info: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate