MARKING M1P Search Results

M74 marking

Abstract: MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109
Contextual Info: Philips Semiconductors Small-signal fteld-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER TYPE NUMBER MARKING CODE

Philips MARKING CODE

Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked

BSS83 M74

Abstract: bf992 m92 bf998 Mop marking M29 M74 marking BF511 BF909RM29 marking nb transistor M3P BFT46
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes Small-signal field-effect transistors 1997 Dec 05 Supersedes data of 1995 Apr 12 File under Discrete Semiconductors, SC07 Philips Semiconductors Small-signal field-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table.

sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER

transistor marking code 443

Abstract: DMP2123L DMP2123L-7 DMP2123 J-STD-020D
Contextual Info: DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • Mechanical Data • • Low RDS ON : • 72 mΩ @VGS = -4.5V • 108 mΩ @VGS = -2.7V • 123 mΩ @VGS = -2.5V

Contextual Info: DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N EW PRODU CT • • • • • Mechanical Data • • Low RDS ON : • 72 mΩ @VGS = -4.5V • 108 mΩ @VGS = -2.7V • 123 mΩ @VGS = -2.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3)

Contextual Info: DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low RDS ON • 72 m @VGS = -4.5V • 108 m @VGS = -2.7V  123 m @VGS = -2.5V Case: SOT23  Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0

Mifare plus commands

Abstract: mifare plus functional specification Mifare PLUS X 14443-4 command Mifare PLUS X command reference mifare plus functional specification BU-ID Doc. No. 1637 Mifare plus security level 3 mifare classic 1k Mifare plus protocol Mifare PLUS X commands
Contextual Info: MF1PLUSx0y1 Mainstream contactless smart card IC for fast and easy solution development Rev. 3.2 — 21 February 2011 163532 Product short data sheet PUBLIC 1. General description Migrate classic contactless smart card systems to the next security level! MIFARE Plus

mifare plus functional specification

Abstract: Mifare plus commands 14443-4 command Mifare PLUS X command reference mifare classic 1k card Mifare PLUS X mifare classic 1k mifare plus functional specification BU-ID Doc. No. 1637 Mifare plus protocol MOA4 package specification
Contextual Info: MF1PLUSx0y1 Mainstream contactless smart card IC for fast and easy solution development Rev. 3.1 — 19 April 2010 163531 Product short data sheet PUBLIC 1. General description Migrate classic contactless smart card systems to the next security level! MIFARE Plus

Mifare plus commands

Abstract: mifare plus functional specification Mifare PLUS X command reference "M1PLUSx0y1" mifare classic 1k Mifare Plus X 4K UID 7 Byte Mifare plus protocol 14443-3 command read write mifare classic 14443-4 command 14443-4
Contextual Info: MF1SPLUSx0y1 Mainstream contactless smart card IC for fast and easy solution development Rev. 3.1 — 19 April 2010 187031 Product short data sheet PUBLIC 1. General description Migrate classic contactless smart card systems to the next security level! MIFARE Plus

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

75N07Gp

Abstract: 75n07 75N07GS Gv09 L4AA b1l3
Contextual Info: AP75N07GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 75V RDS ON 11mΩ ID G 80A S Description Advanced Power MOSFETs from APEC provide the

mifare plus functional specification

Abstract: Mifare plus commands Mifare PLUS X command reference write perso mifare plus mifare plus functional specification BU-ID Doc. No. 1637 MIFARE PLUS 14443-4 command mifare plus s 2k mifare write perso mifare classic 1k
Contextual Info: MF1SPLUSx0y1 Mainstream contactless smart card IC for fast and easy solution development Rev. 3.2 — 21 February 2011 187032 Product short data sheet PUBLIC 1. General description Migrate classic contactless smart card systems to the next security level! MIFARE Plus

marking M1P

Contextual Info: Panasonic Schottky Barrier Diodes SBD MA714 Silicon epitaxial planer type For the switching circuit For wave detection circuit • Features • Two elements are incorporated in MA704A (of a type differing in direction) • Low forward rise voltage Vf , optimum for low-voltage rectification

Contextual Info: MA111 Schottky Barrier Diodes SBD MA714 Silicon epitaxial planer type Unit : mm For the switching circuit For wave detection circuit +0.2 2.8 –0.3 0.65±0.15 Fast reverse recovery time trr, optimum for high-frequency rectifica- +0.1 0.5 +0.1 Forward current (DC)

MA4X714

Abstract: marking M1P
Contextual Info: Schottky Barrier Diodes SBD MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 Reverse voltage (DC) Peak forward current

marking M1P

Contextual Info: Schottky Barrier Diodes SBD MA4X714 (MA714) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For switching For wave detection 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 1 0.60+0.10 –0.05 Peak forward Single current Double Forward current (DC)

EFD34

Abstract: DS161R Motor Control Center wiring diagram abb TFK catalog EX-88 WESTINGHOUSE motor life line westinghouse mcp breaker TFK 543 TC236
Contextual Info: Industrial Control & Circuit Breakers Section C Innovative, intelligent NEC and IEC solutions safely and efficiently control power and protect circuits in explosive, wet, and corrosive environments worldwide. New Products in the Control Product Line Section

MMBT2222

Abstract: MMBT2709 MMBT2222A MMBT2709A marking M1P
Contextual Info: MMBT2222 / MMBT2222A MMBT2222 / MMBT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: MMBT2222 / MMBT2222A MMBT2222 / MMBT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-15 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: _ BFR30 BFR31 JK N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a m icrom iniature plastic envelope. It is intended fo r low level general purpose amplifiers in thick and thin -film circuits.

Contextual Info: • bbSB^Bl 0025137 440 APX N AUER PHI LIPS/DISCRETE b?E BFR30 BFR31 T> J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.

Contextual Info: X C t 7 0 1 L 3.3V , X C 1 701 (5.0V) and X C 17 5 1 2 L (3.3V) £ XILINX Serial Configuration PROMs December 1 0 ,1997(Version 1.1) Product Specification Features Description • The XC1701L, XC1701 and XC17512L serial configuration PROMs (SCPs) provide an easy-to-use, cost-effective

MA3X704A

Abstract: MA4X714 MA704A MA714
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X714 (MA714) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For switching For wave detection 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 1 0.60+0.10 –0.05