MARKING LTH Search Results

Contextual Info: Thermal Sensitive Resistors Thermal Sensitive Resistors Type: ERSB 0.25 W • Features ● ● ● ● Performance ááááááááááááááá Quick response, good linearity of T.C.R. Marking ááááááááááááááááááááááá 5 color code marking

VARIO switch

Abstract: vcfx-ge4 2 Pole 5 Position Rotary Switch VCF02GE VCFN-40GE VCFN-12GE 12GE "3 pole Rotary Switch" VCF-01GE switch disconnectors
Contextual Info: Safety solutions using Preventa References VARIO enclosed switch disconnectors pre-assembled Enclosed switch disconnectors for high performance applications 580571 b Marking on operator . b 3-pole rotary switch disconnectors from 10 to 140 A b Padlockable operating handle (padlock not included).

Contextual Info: SIEMENS BCR 116W NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kfl, R2=47kfi _ 0_ LT t r Marking Ordering Code Pin Configuration BCR 116W WGs UPON INQUIRY 1= B Package LU

SOT23 KJA

Contextual Info: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type

Contextual Info: BFN 16 BFN 18 NPN Silicon High-Voltage Transistors • • • • Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-em itter saturation voltage Complementary types: BFN 17, BFN 19 PNP Type Marking

Contextual Info: SIEMENS BCR 162 PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, drivere circuit »Built in bias resistor R-|=4.7kii, R2=4.7kQ □ ET Type Marking Ordering Code Pin Configuration BCR 162 WUs Q62702-C2378 1=B Package 2=E 3=C

M7A transistor

Abstract: transistor M7A Q62702-C2340
Contextual Info: SIEMENS BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1 = 4 .7 kii Type Marking Ordering Code Pin Configuration BCR 169 WSs Q62702-C2340 1=B Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: SIEMENS BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22kfl, R2=22 kQ Pin Configuration BCR 141 WDs 1= B II co Q62702-C2258 Package O Marking Ordering Code LU II evi

Contextual Info: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=47kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 198 WRs Q62702-C2266 1=B Package 3=C 2=E SOT-23

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

TN2106ND

Contextual Info: TN2106 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: b v dss/ ^DS ON V(3S(tfi) BVdgs (max) (max) TO-236AB* TO-92 Die N 1L* 60V 2 .5 0 2.0V TN2106K1 TN2106N3

Contextual Info: SIEMENS BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration BF 517 LRs Q62702-F42 1= B Package 2=E 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage

Contextual Info: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor

Contextual Info: NPN Silicon RF Transistor 35E D • ^ 3 H 7 023b32Q 0011=701 □ H S I P BF775 _ SIEMENS/ SPCL-i SEMICONDS • • Broadband amplifier, mixer, oscillator, and switching applications up to 2 GHz Specially suited for use in TV-sat and UHF TV tuners Type Marking

Contextual Info: S IE M E N S BCR 191 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=22k£i, R2=22kfl Type Marking Ordering Code Pin Configuration BCR 191 WOs Q62702-C2264 1=B Package 2=E 3=C SOT-23

Siemens S-89

Abstract: Siemens S 89
Contextual Info: SIEMENS BSP 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type b 0.36 A BSP 89 VDS 240 V Type BSP 89 Ordering Code Q67000-S652 flDS(on) Package Marking 6Q SOT-223 BSP 89 Tape and Reel Information

marking code 68W

Contextual Info: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W CI/A2 A t/M FL _0_ U BAT68-06W C1/C2 HT • n HT U ET Type Marking Ordering Code Pin Configuration BAT 68-04W

marking lth

Contextual Info: Silicon Switching Diode • BAS16 F o r h ig h -sp e e d sw itching C Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A S 16 A6 Q 62 70 2-A 72 6 Q 62 70 2-A 73 9 S O T 23 Maximum ratings Parameter Symbol Ratings

DIODE S3V

Abstract: DIODE S3V20
Contextual Info: y v r —K *•*' ■ i \ £ ï ^ . : . . i k . : , , . A x to tD lo d * . ;:v,;:.-: . . . ;. ; O U T L IN E D IM EN SIONS S3VD • C athode D • Anode 7.5M AX 24MIN ¿4.8MAX 24 MIN 600V 3.5A 0—M- ;£ E P ® iiG 3 l2 C o lo r code. C athode band Marking

CTG-22S

Abstract: CTG-34S CTG-32S CTG-33S CTG23S smew CTG-11S CTG-12R CTG-12S CTG-14R
Contextual Info: SANKEN ELECTRIC C« LTH iS 3SE B Ultra Fast Recovery Diodes _ 7 ^ _ S A K J T~Zt~07 7 ^ 0 7 4 1 GODGfll? b V r m:70~ 400V e i o : 5.0~ 20A BESSES CTG V rm V CTG-12S CTG-12R CTG-14S CTG-14R CTG-21S CTG-21R CTG-22S CTG-22R CTG-23S CTG-23R CTG-24S CTG-24R CTG-31S

Contextual Info: Introduction Quality assurance and reliability W e put quality first. Q uality here refers both to the integrity of the products that w e m anufacture and the price and tim ely d elivery of those products to our custom ers. A lthough w e put the utm ost effort into each

20k variable resistor

Abstract: MMBD2835LT1 MMBD2836LT1 dual diode anode-cathode
Contextual Info: MMBD2836LT1 MONOL LTHIC DUAL SWITCHING DIODE SOT-23 A 3 L ANODE-CATHODE 3 3 1 B 1 2 2 ANODE 1 J K S C 2 CATHODE V G D H o Absolute Maximum Ratings Ta=25 C Characteristic Symbol Rating Unit Reverse Voltage V(BR) 75 Vdc Forward Current IF 100 nAdc 225 PF mW/ C

20k variable resistor

Abstract: FR510 MMBD2837LT1 MMBD2838LT1 sot23l-3
Contextual Info: MMBD2838LT1 MONOL LTHIC DUAL SWITCHING DIODE A SOT-23 L 3 B 1 V S 3 ANODE-CATHODE 3 2 G 1 K 1 J 2 C D 2 ANODE CATHODE H o Absolute Maximum Ratings Characteristic Ta=25 C Symbol Rating Unit Reverse Voltage VR 50 Vdc Peak Reverse Voltage VRM 75 Vdc Peak Forward Current

d 9329

Abstract: r4373
Contextual Info: l PROJECTION go, I 1 aetgASgQ FO* PUflLJCATiON •V A HP OATC INCOf^OftArCO. LOC AD 25 ALL ¿MnHNATIONAL ftltMTS MTMÜVKO. APPO S/10/91 L SB LSB 12/90/» L SB S/2/S2 LSB S/28/33 LSB 2/7/94 LSB 3/25/94 LSB o:sr R E V IS IO N S p p LTH 20NC B : C D E • :5>