MARKING LBE Search Results

1721E50R

Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Contextual Info: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking

Y parameters of transistors

Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Contextual Info: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .

A530B

Abstract: HSDC614H1B HSDC614-H-1B
Contextual Info: r> PIN WHITE EPOXY INKPART MARKING 2.2 SO PIN 19 REF PIN 36 (R EF) 10 II 12 13 14 15 16 17 18 O M PUTER ¡O N V E R S IO N S □ R P O R A T IO N F S C M :B 1 D 8 B MODEL: H S D C B Í 4 - H - 1 B • PIN 18 (REF) DATE CODE-» (STAMPED) \ SERIAL NUMBER (STAMPED)

Contextual Info: N AMER PHILIPS/DISCRETE i i bbS3T3i ObE J> a • MAINTENANCE TYPES LBE/LCE1004R LBE/LCE1010R for new design use LBE/LC E2003S and LBE/LCE2009S T - S 3 -OS' M IC R O W A V E LIN EAR PO W ER T R A N S IST O R S N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.

LBE1004R

Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
Contextual Info: OLE T> N AMER P H IL IP S /D IS C R E T ! •FbbSB^l MAINTENANCE TYPES Q O lim ? JI' for new design use LBE/LCE2003S and LBE/LCE2009S S ■ LBE/LCE1004R LBE/LCE1010R MICROWAVE LINEAR POWER TRANSISTORS N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.

YTS3904

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES : . Low Leakage Current : !cEV*50nA(Max.), lBEV*50aA(Max.) <3 V c e -30V, V BE-3V . Excellent DC Current Gain Linearity

Ho-16

Contextual Info: • A % ' LBE FULL SIZE CLOCK OSCILLATORS TTL/HCMOS COMPATIBLE @ H O -13& 16 SERIES FEATURES T h e H O - 1 3 s erie s o scillato r is Full • Tri-State Enable/Disable S ize T ri-state E n ab le/D isab le control. • 14 Pin Full Size H O -16 series is with 3 .3 V power supply

IC BL 176A

Contextual Info: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.

409 Marking Code

Abstract: Data Handbook sc15
Contextual Info: Philips Semiconductors Product specification LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors FEATURES DESCRIPTION • Diffused emitter ballasting resistors The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal

LBE2003S

Abstract: LBE2009S LCE2009S SC15
Contextual Info: DISCRETE SEMICONDUCTORS LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer

LBE2003S

Abstract: LBE2009S LCE2009S SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification LBE2003S;

power transistors table

Abstract: LBE2003S LBE2009S
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S NPN microwave power transistors Product specification Supersedes data of 1997 Mar 03 1998 Feb 16 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S FEATURES

LBE2003S

Abstract: LCE2003S sfe 5,5 ma LBE2009S LBE2009SA LCE2009S LCE2009SA 46 MARKING CODE
Contextual Info: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA PHILIPS I N T E RNATIONAL 5bE D • 711QA2b ODMblflS ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN transistors fo r use in a co m m o n -e m itte r class-A linear p o w e r a m p lifie r up to 4 GHz. D iffused e m itte r ballasting resistors, self-aligned process e n tire ly ion im planted and gold m e ta lliza tio n

zkb* vac

Abstract: LINDNER fuses WEIDMULLER WDU2.5 IEC 947-7-1 terminal block 400v diode catalogue LINDNER fuses neozed WPE 35 EARTH 101050 level measurement with displacer SIBA FUSE FF D-FUSE E-16
Contextual Info: Terminals New in this catalogue W-Series Installation terminal blocks WPE 35 N Page 2/14 different colour versions ZQV Cross-connections Page 2/5 Installation terminal blocks WDU 35 N Pluggable cross-connections for WDU 2.5 Page 2/9 Page 2/4 Cross-connections

Zener Diode SOT-23 929b

Abstract: 13.8 8w zener diode zener diode t5 MMSZ4V7T1 MOTOROLA 929B 953b X2 diode zener zener diode T3 Marking diodes zener de 3.5 volts 938B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona

Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 01-06-20 R. MONNIN Drawing updated to reflect current requirements. - ro THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET

"marking nh"

Abstract: 1SMB10 1SMB10A 1SMB11 1SMB11A 1SMB12 1SMB12A 1SMB13 1SMB170 403A-01
Contextual Info: M O T O R O L A SC D IOD ES / OP T O 5SÉ b3L7555 DDÒIBET □ J> MOTOROLA Order this data sheet by 1SMB5.Ô/D T - a - 2 3 SEMICONDUCTOR piivjì TECHNICAL DATA 1SMB5.0, A Zener O vervoltage Transient Su p p re sso rs thru 1SM B170, A . . . this device is designed specifically for transient voltage suppression. The wide leads

QML-38535

Abstract: 5962-E194-02
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Drawing updated to reflect current requirements. –rrp APPROVED 02-01-11 R. MONNIN REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

GENERAL SEMICONDUCTOR MARKING lg 68a

Abstract: motorola ZENER 39a 1SMB12AT3 436 LZ 051 6V8A 1SMB70CAT3 LMC 447 MOTOROLA 6v8a 1SMB11CAT3 1SMB10CAT3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 600 WATT PEAK POWER Zener Transient Voltage Suppressors The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low

GENERAL SEMICONDUCTOR MARKING lg 68a

Abstract: 33A d P6SMB15CA motorola ZENER 39a 1SMB12AT3 436 LZ ZENER SMB marking KR 1SMB11CAT3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G EN ER A L DATA 600 WATT PEAK POWER GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Transient Voltage Suppressors The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low

953B

Abstract: MOTOROLA 929B PLASTIC SURFACE MOUNT ZENER DIODES marking 918b motorola diode marking 925b ZENER 1 WATT 6.8V 3 Watt Zener Diode 914B 955B 919b diode 923b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913BT3 through 1SMB5956BT3 3 Watt Plastic Surface Mount Silicon Zener Diodes This complete new line of 3 Watt Zener Diodes offers the following advantages. Specification Features: • A Complete Voltage Range — 3.3 to 200 Volts

51a zener

Abstract: motorola ZENER 39a 10029a 1SMB5917A 6833a 2306C 1SMB5914A Motorola Zener 1SMB5913A 1SMB5915A
Contextual Info: M O T O R O L A SC D IODES/OPTO 2SE D b3fcj?255 Ü0Ô1325 3 • Order this data sheet by 1SMB5913A/D 1h I-5T MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1SMB5956A, B 1.5 W att P lastic Surface M o u n t Silico n Zener D iodes . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

Diode Marking ZM Motorola

Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Contextual Info: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages: