MARKING KFK Search Results

marking kfk

Abstract: E6327 marking BSs DIODE MARKING CODE G SOT23 7728
Contextual Info: BSS 7728 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.0.2.5V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 7728 60 V 0.15 A 7.5 Ω SOT-23 sSJ Type BSS 7728 Ordering Code Q67000-S307 D Tape and Reel Information

TRANSISTOR SMD MARKING CODE kn

Abstract: TRANSISTOR SMD MARKING CODE 8J SMD TRANSISTOR MARKING km qml-38535 transistor smd marking hq 5962-91631 Marking SMD 638
Contextual Info: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR REV SHEET REV SHEET REV STATUS OF SHEETS REV 10 SHEET PMIC N A 11 12 14 13 PREPABED BY DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS

Flex-OneNAND Samsung

Abstract: Samsung 8Gb MLC Nand flash Flex-OneNAND SAMSUNG 8gb NAND Flash memory 0295h
Contextual Info: Flex-MuxOneNAND4G KFM4GH6Q4M-DEBx Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) FLASH MEMORY . KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M 4Gb Flex-MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

KFN4G16Q2M

Abstract: NAND SAMSUNG
Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) MuxOneNAND8G(KFK8G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M KFK8G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

14538B MOTOROLA

Abstract: ON Semiconductor CMOS Logic Data 14541b IC 74175 MC14001 cd4000 Przedpelski mc14538bcp equivalent MC14024BCP AA aiken segment
Contextual Info: DL131/D Rev. 4, Mar-2000 ON Semiconductor CMOS Logic Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

marking kfk

Contextual Info: SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOS VII-H SSM3K333R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm +0.08 • 4.5V drive • Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)

14046b

Abstract: mc14046b A. B. Przedpelski, "Phase-Locked Loop Design mOTOROLA mhtl SO16F Przedpelski AR254
Contextual Info: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage

Contextual Info: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage

AR254

Abstract: fsk modulation and demodulation 14046b MC14046BC
Contextual Info: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage

14046b

Abstract: A. B. Przedpelski, "Phase-Locked Loop Design TTL DIODE
Contextual Info: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage–controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage