MARKING KFK Search Results
MARKING KFK Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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MARKING KFK Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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marking kfk
Abstract: E6327 marking BSs DIODE MARKING CODE G SOT23 7728
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ot-23q67000-s307e6327marking kfk+3 | |
marking azwContextual Info: Specifications aXIJ Model $&, $E % % Carbon film variable resistor @P$ifk#aE Customer Specification Number @+kmi+3 Customer Part Name a$ksE%% Customer Part Number A+kM TOCOS Part Name A+kfk#%% TOCOS Specification Number RY -7 7 30 *Fz~x€Xa#R3&~ TOKYO COSMOS E L E C T R I C CO. ,L T D . |
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o3-3258-3159o6-6906-0573marking azw | |
maa 502
Abstract: LNK 605 MWM 6.12 651 lem marking kfk LSK Series marking lxk MVK Series smb100a SMB33
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maa 502lnk 605mwm 6.12651 lem+6 | |
600WATTS
Abstract: LNK 605 651 lem 332 lsk MZK 145 190 ndk KEM marking smb15ca
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600wattsdo-214aa203maxlnk 605+6 | |
marking NFK
Abstract: SMB45CA LSK Series 190 ndk KEM marking LNK 605 optocoupler 357 MIN KDK SMB22A lwm series
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smb180smb180csmb180asmb180ca+14 | |
LNK 605
Abstract: optocoupler 357 SMB10C MWM 6.12 651 lem code marking KNM marking lxk SMB18CA SMB6.8A SMB100
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smb170asmb170casmb180smb180c+16 | |
TRANSISTOR SMD MARKING CODE kn
Abstract: TRANSISTOR SMD MARKING CODE 8J SMD TRANSISTOR MARKING km qml-38535 transistor smd marking hq 5962-91631 Marking SMD 638
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OCR Scan |
5962-e4060pl-38510qml-38535mil-bul-103+6 | |
Flex-OneNAND Samsung
Abstract: Samsung 8Gb MLC Nand flash Flex-OneNAND SAMSUNG 8gb NAND Flash memory 0295h
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flex-muxonenand16g80x11flex-onenand samsungsamsung 8gb mlc nand flash+3 | |
Samsung 8Gb MLC
Abstract: Flex-OneNAND Samsung KFM4GH6Q4M-DEBx Samsung 8Gb MLC Nand flash samsung 8Gb nand flash SLC NAND endurance 100k years 16gb 16GB Nand flash samsung 16GB Nand flash Flex-OneNAND
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flex-muxonenand16g80x11samsung 8gb mlcflex-onenand samsung+8 | |
KFN4G16Q2M
Abstract: NAND SAMSUNG
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kfm2g16q2m-debxkfn4g16q2m-debxkfk8g16q2m-debxkfm2g16q2m+4 | |
KFn4G
Abstract: Samsung 8Gb MLC 076B 0632H KFK8G16Q2M 0736h 06B6H 0747H KFN4G16Q2MDEb KFN4G16Q2M
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kfm2g16q2m-debxkfn4g16q2m-debxkfk8g16q2m-debxkfm2g16q2m+12 | |
14538B MOTOROLA
Abstract: ON Semiconductor CMOS Logic Data 14541b IC 74175 MC14001 cd4000 Przedpelski mc14538bcp equivalent MC14024BCP AA aiken segment
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dl131/dmar-2000r14525dl131+10 | |
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Contextual Info: SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOS VII-H SSM3K333R Power Management Switch Applications High-Speed Switching Applications Unit: mm +0.08 4.5V drive • Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) 0.05 |
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ssm3k333r | |
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Contextual Info: SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOS VII-H SSM3K333R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm +0.08 0.05 M A 0.42 -0.05 +0.08 0.17 -0.07 • Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) |
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ssm3k333r | |
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14046b
Abstract: mc14046b A. B. Przedpelski, "Phase-Locked Loop Design mOTOROLA mhtl SO16F Przedpelski AR254
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mc14046ban-535ar25414046b+4 | |
PLL design przedpelski
Abstract: 6c1a 14046BG A. B. Przedpelski, "Phase-Locked Loop Design Zener diode DW R1 Przedpelski Low-pass Passive Filter Design Techniques
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sc14046bsc14046b/dpll design przedpelski6c1a+5 | |
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Contextual Info: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage |
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mc14046bmc14046b/d | |
MC14046BCP
Abstract: 6c1a PLL design przedpelski MC14046BCPG MC14046B MC14046BDW MC14046BDWG MC14046BDWR2 CD4046B Przedpelski
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mc14046bmc14046b/dmc14046bcp6c1a+7 | |
mc14046bContextual Info: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage |
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mc14046bmc14046b/d | |
AR254
Abstract: fsk modulation and demodulation 14046b MC14046BC
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mc14046bmc14046b/dar254fsk modulation and demodulation+2 | |
PrzedpelskiContextual Info: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage |
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mc14046bmc14046b/dprzedpelski | |
14046bContextual Info: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage |
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mc14046bmc14046b/d14046b | |
Przedpelski
Abstract: AR254 MC14046BCP A. B. Przedpelski, "Phase-Locked Loop Design cd4046b application MC14046BCPG CD4046B MC14046B MC14046BDW MC14046BDWG
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mc14046bmc14046b/dprzedpelskiar254+7 | |
14046b
Abstract: A. B. Przedpelski, "Phase-Locked Loop Design TTL DIODE
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mc14046br14525mc14046b/d14046b+2 | |