F107 Search Results
F107 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CDSCB10M7GF107S-R0 | Murata Manufacturing Co Ltd | Ceramic BPF, 10.7MHz |
F107 Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| F1-07 | Weinschel | Fixed Coaxial Attenuator | Original | 129.52KB | 1 | ||
| F107 | Unknown | Discontinued Transistor Data Book 1975 | Scan | 201.33KB | 2 | ||
| F1070 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 37.88KB | 2 | ||
| F1072 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 38.24KB | 2 | ||
| F1074 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 39.78KB | 2 | ||
| F1076 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 38.42KB | 2 | ||
| F1077 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 37.82KB | 2 | ||
| F-107Z | Triad Magnetics | POWER TRANSFORMER | Original | 37.13KB | 1 | ||
| F-107Z | MagneTek | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transformer, Control, Chassis Mt., 115/230V, 48VA, 24.0VCT@2.0 A, 12.0V@4.0 A, l | Scan | 79.69KB | 1 |
F107 Price and Stock
ABB Low Voltage Products and Systems F10711Tubular 4AWG Electrolytic Copper 34.79mm Electro Tin Sta-Kon® |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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F10711 | 4,158 | 100 |
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| F10711 | 247 | 8 |
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| F10711 | 102 | 8 |
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F10711 | 50 |
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ABB Low Voltage Products and Systems F10721Tubular 4AWG Electrolytic Copper 36.06mm Electro Tin |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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F10721 | 2,000 | 100 |
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| F10721 | 210 | 73 |
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| F10721 | 102 | 6 |
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| F10721 | 20 | 6 |
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F10721 | 50 |
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ABB Low Voltage Products and Systems F10731Tubular 4AWG Electrolytic Copper 36.06mm Tin Sta-Kon® |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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F10731 | 900 | 100 |
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| F10731 | 8 | 3 |
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ABB Low Voltage Products and Systems F10731UFF10731UF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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F10731UF | 17 | 14 |
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Samsung Electro-Mechanics RC1608F1072CS- Tape and Reel (Alt: RC1608F1072CS) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RC1608F1072CS | Tape & Reel | 150,000 | 45 Weeks | 5,000 |
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F107 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: polyfet rf devices F1076 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended |
OCR Scan |
f1076j060-1110avenidaacaso7241ddt | |
MS20659-112
Abstract: WT115A
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Original |
f10731ms20659-112ms-20659-112wt115a+5 | |
F1074
Abstract: 100watts power amp
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Original |
f1074100watts power amp | |
F1072
Abstract: 100WATTS
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Original |
f1072100watts | |
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Contextual Info: polyfet rf devices F1072 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "PolyfetHtm process features gold metal for greatly extended |
OCR Scan |
f1072 | |
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Contextual Info: polyfet rf devices F1070 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
f10701110avenidaacaso7241qch | |
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Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700 mcd Z42:1700-1800 mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd Z82:2685-2850 mcd |
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wt-f107sp81-1a220x240mm30sec+1 | |
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Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700mcd Z42:1700-1800mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd O @20mA/ Ta= 25 ;Tolerance: + 10% |
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wt-f107sp1610-1700mcd1700-1800mcd81-1a+3 | |
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Contextual Info: WT-F107SP-K973 Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700mcd Z42:1700-1800mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd O @20mA/ Ta= 25 ;Tolerance: + 10% |
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wt-f107sp-k9731610-1700mcd1700-1800mcd81-1a+3 | |
ms20659-111
Abstract: MS-20659-111
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Original |
f10711ms20659-111ms-20659-111wt115a+5 | |
MS20659-132
Abstract: ms 20659-132
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Original |
f10721ms20659-132ms-20659-132wt115a+6 | |
F1076Contextual Info: polyfet rf devices F1076 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
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f1076 | |
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Contextual Info: WT-F107MR-K0811 Surface Mount LEDs Product Specification Specification Material Quantity 2000pcs per reel Luminous Intensity 2530-3400 mcd O @20mA / Ta= 25 C Tolerance±7% Correlated Color Rafer to page 4~5 Temperature @20mA / Ta= 25 C O Tolerance x, y± 0.005 |
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wt-f107mr-k08112000pcs81-1a220x240mm+4 | |
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Contextual Info: WT-F107MR Surface Mount LEDs Product Specification Specification Material Quantity 2000pcs per reel Luminous Intensity 2530-3400 mcd O @20mA / Ta= 25 C Tolerance±7% Correlated Color Rafer to page 4~5 Temperature @20mA / Ta= 25 C O Tolerance x, y± 0.005 Vf |
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wt-f107mr2000pcs81-1a220x240mm+4 | |
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Contextual Info: Side view Chip LED HT-F107NW Harvatek Surface Mount CHIP LED Data Sheet HT-F107NW Official Product HT Part No. HT-F107NW Customer Part No. Tentative Product * * Specifications are subject to change without notice. Data and drawings herein are copyrighted. |
Original |
ht-f107nwmay-281000hrstamb25+3 | |
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Contextual Info: polyfet rf devices F1077 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
f1077temper00 | |
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Contextual Info: polyfet rf devices F1076 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
f1076 | |
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Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700 mcd Z42:1700-1800 mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd Z82:2685-2850 mcd |
Original |
wt-f107sp81-1a220x240mm30sec+1 | |
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Contextual Info: WT-F1071SP PLCC Side View Back Light LED Product Specification Item Specification Material Luminous Cool White: 2385~3020 mcd Intensity(Iv) @20mA/ TS= 25℃ ;Tolerance: + 10% Chromaticity As page 4 & 5 Coordinate @20mA/ TS= 25℃;Tolerance: + 0.01 Vf Cool White:2.8~3.4 V (0.1V/Bin) |
Original |
wt-f1071sp81-1a220x240mm2000pcs+2 | |
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Contextual Info: polyfet rf devices F1074 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“1 process features gold metal for greatly extended |
OCR Scan |
f10741502dvd81n | |
F1070Contextual Info: polyfet rf devices F1070 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
f1070 | |
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Contextual Info: polyfet rf devices F1072 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
f1072 | |
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Contextual Info: WT-F107SP-HIGH IV Side view Chip LED Product specifications Specification Iv mcd Material Quantity IV:2530-3020mcd O @20mA/ Ta= 25 ;Tolerance: + 10% Chromaticity As page 6 & 7 Coordinate @20mA/ Ta= 25 C;Tolerance: + 0.01 Vf (V) 3.0-3.4 (0.1V/bin) O O @20mA/ Ta= 25 C ;Tolerance: + 0.05V |
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wt-f107sp-high2530-3020mcd81-1a220x240mm+3 | |
EMK10
Abstract: UMK432 tmk325 UMK325 MK325 K20L EMK325 F-106Z GF105 BJ10
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f107typeumk10gmk10tmk10+10 | |