F107 Search Results

Contextual Info: polyfet rf devices F1076 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended

MS20659-112

Abstract: WT115A
Contextual Info: T&B Catalog Number: UPC Number: Description: Status: F10731 78621082968 Non-Insulated - Tubular Ring Terminal For Wire Range 4 Stud Size 3/8, Metallic, Military Specified MIL-SPEC MS20659-112 Active WEB_USE -US Cutsheet PDF Catalog Link

F1074

Abstract: 100watts power amp
Contextual Info: polyfet rf devices F1074 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1072

Abstract: 100WATTS
Contextual Info: polyfet rf devices F1072 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1072 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "PolyfetHtm process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1070 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700 mcd Z42:1700-1800 mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd Z82:2685-2850 mcd

Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700mcd Z42:1700-1800mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd O @20mA/ Ta= 25 ;Tolerance: + 10%

Contextual Info: WT-F107SP-K973 Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700mcd Z42:1700-1800mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd O @20mA/ Ta= 25 ;Tolerance: + 10%

ms20659-111

Abstract: MS-20659-111
Contextual Info: T&B Catalog Number: UPC Number: Description: Status: F10711 78621082966 Non-Insulated - Tubular Ring Terminal For Wire Range 4 Stud Size 1/4, Metallic, Military Specified MIL-SPEC MS20659-111 Active WEB_USE -US Cutsheet PDF Catalog Link

MS20659-132

Abstract: ms 20659-132
Contextual Info: T&B Catalog Number: UPC Number: Description: Status: F10721 78621082967 Non-Insulated - Tubular Ring Terminal For Wire Range 4 Stud Size 5/16, Metallic, Military Specified MIL-SPEC MS20659-132 Active WEB_USE -US Cutsheet PDF Catalog Link

F1076

Contextual Info: polyfet rf devices F1076 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: WT-F107MR-K0811 Surface Mount LEDs Product Specification Specification Material Quantity 2000pcs per reel Luminous Intensity 2530-3400 mcd O @20mA / Ta= 25 C Tolerance±7% Correlated Color Rafer to page 4~5 Temperature @20mA / Ta= 25 C O Tolerance x, y± 0.005

Contextual Info: WT-F107MR Surface Mount LEDs Product Specification Specification Material Quantity 2000pcs per reel Luminous Intensity 2530-3400 mcd O @20mA / Ta= 25 C Tolerance±7% Correlated Color Rafer to page 4~5 Temperature @20mA / Ta= 25 C O Tolerance x, y± 0.005 Vf

Contextual Info: Side view Chip LED HT-F107NW Harvatek Surface Mount CHIP LED Data Sheet HT-F107NW Official Product HT Part No. HT-F107NW Customer Part No. Tentative Product * * Specifications are subject to change without notice. Data and drawings herein are copyrighted.

Contextual Info: polyfet rf devices F1077 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1076 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700 mcd Z42:1700-1800 mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd Z82:2685-2850 mcd

Contextual Info: WT-F1071SP PLCC Side View Back Light LED Product Specification Item Specification Material Luminous Cool White: 2385~3020 mcd Intensity(Iv) @20mA/ TS= 25℃ ;Tolerance: + 10% Chromaticity As page 4 & 5 Coordinate @20mA/ TS= 25℃;Tolerance: + 0.01 Vf Cool White:2.8~3.4 V (0.1V/Bin)

Contextual Info: polyfet rf devices F1074 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“1 process features gold metal for greatly extended

F1070

Contextual Info: polyfet rf devices F1070 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1072 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: WT-F107SP-HIGH IV Side view Chip LED Product specifications Specification Iv mcd Material Quantity IV:2530-3020mcd O @20mA/ Ta= 25 ;Tolerance: + 10% Chromaticity As page 6 & 7 Coordinate @20mA/ Ta= 25 C;Tolerance: + 0.01 Vf (V) 3.0-3.4 (0.1V/bin) O O @20mA/ Ta= 25 C ;Tolerance: + 0.05V

EMK10

Abstract: UMK432 tmk325 UMK325 MK325 K20L EMK325 F-106Z GF105 BJ10
Contextual Info: •汎用・低背積層セラミックコンデンサ General・Low profile Multilayer Ceramic Capacitors アイテム一覧 PART NUMBERS F107TYPE 0603 case size 定 格 形 名 電 圧 RatedVoltage 50V 35V 25V 16V 10V 6.3V 4V 50V 25V 16V 10V