F107 Search Results

Contextual Info: polyfet rf devices F1076 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended

MS20659-112

Abstract: WT115A
Contextual Info: T&B Catalog Number: UPC Number: Description: Status: F10731 78621082968 Non-Insulated - Tubular Ring Terminal For Wire Range 4 Stud Size 3/8, Metallic, Military Specified MIL-SPEC MS20659-112 Active WEB_USE -US Cutsheet PDF Catalog Link

F1074

Abstract: 100watts power amp
Contextual Info: polyfet rf devices F1074 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1072

Abstract: 100WATTS
Contextual Info: polyfet rf devices F1072 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1072 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "PolyfetHtm process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1070 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700 mcd Z42:1700-1800 mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd Z82:2685-2850 mcd

Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700mcd Z42:1700-1800mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd O @20mA/ Ta= 25 ;Tolerance: + 10%

Contextual Info: WT-F107SP-K973 Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700mcd Z42:1700-1800mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd O @20mA/ Ta= 25 ;Tolerance: + 10%

Contextual Info: WT-F107MR-K0811 Surface Mount LEDs Product Specification Specification Material Quantity 2000pcs per reel Luminous Intensity 2530-3400 mcd O @20mA / Ta= 25 C Tolerance±7% Correlated Color Rafer to page 4~5 Temperature @20mA / Ta= 25 C O Tolerance x, y± 0.005

Contextual Info: WT-F107MR Surface Mount LEDs Product Specification Specification Material Quantity 2000pcs per reel Luminous Intensity 2530-3400 mcd O @20mA / Ta= 25 C Tolerance±7% Correlated Color Rafer to page 4~5 Temperature @20mA / Ta= 25 C O Tolerance x, y± 0.005 Vf

Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700 mcd Z42:1700-1800 mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd Z82:2685-2850 mcd

Contextual Info: WT-F1071SP PLCC Side View Back Light LED Product Specification Item Specification Material Luminous Cool White: 2385~3020 mcd Intensity(Iv) @20mA/ TS= 25℃ ;Tolerance: + 10% Chromaticity As page 4 & 5 Coordinate @20mA/ TS= 25℃;Tolerance: + 0.01 Vf Cool White:2.8~3.4 V (0.1V/Bin)

Contextual Info: WT-F107SP-HIGH IV Side view Chip LED Product specifications Specification Iv mcd Material Quantity IV:2530-3020mcd O @20mA/ Ta= 25 ;Tolerance: + 10% Chromaticity As page 6 & 7 Coordinate @20mA/ Ta= 25 C;Tolerance: + 0.01 Vf (V) 3.0-3.4 (0.1V/bin) O O @20mA/ Ta= 25 C ;Tolerance: + 0.05V

F1077

Contextual Info: polyfet rf devices F1077 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86FH93NG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity

TMP86FS49AIUG

Abstract: toshiba rf semiconductor 2014
Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86FS49AIUG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

tmp86fs49aug

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86FS49AUG TMP86FS49AUG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86FH47ADUG TMP86FH47ADUG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

V23154-D0721-F104

Abstract: V23154-D0720-F104 V23154-D0720-B110 V23154-D0721-B110 V23154-C0722-B104 V23154-D0720-C110 V23154-D0719-F104 V23162-B0721-B110 V23154-D0719-B110 V23154-D0726-F104
Contextual Info: Signal Relays AXICOM Cradle N Relay V23154/V23162 n Multi purpose relay reliable n Great variety of contact arrangements and materials to meet specific applications n Contacts for signal loads and currents up to 5 A n DC coil, operating voltage 1.5VDC to 125VDC; AC, latching and nonlatching coils on request

This article

Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86FH46ANG 2010 TOSHIBA CORPORATION All Rights Reserved TMP86FH46ANG Difference among product TMP86xx46 Series 86C846 86CH46 86CM46 86CH46A 86CM46A 86PM46 86PH46 ROM 8192bytes (MASK) 16384bytes (MASK) 32768bytes

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88F846UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/8 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88F846UG 1.1 1.2 1.3 1.4

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88FH41UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/7 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88FH41UG 1.1 1.2 1.3 1.4