MARKING K SOT323 Search Results

marking A1 TRANSISTOR

Abstract: BCP55 BCX55 PBSS4160U PBSS5160U
Contextual Info: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 23 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN low VCEsat (BISS) transistor in a SOT323 (SC-70) plastic package. PNP complement: PBSS5160U. 1.2 Features •

PBSS4160U

Abstract: PBSS5160U
Contextual Info: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 2 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 10Ω VGS = -5V SOT323 -130mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

BC817

Contextual Info: BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion • • Epitaxial Planar Die Construction • • Complementary PNP Types: BC807-xxW Case: SOT323 Case Material: molded plastic, “Green” molding compound

marking G SOT323 Transistor

Contextual Info: Preliminary Data Sheet PD-20641 12/01 BAT54W SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT323 Value Units 0.2 A VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A VF @30mA DC, TJ= 25°C 0.5 V Pd Power Dissipation @ TA = 25°C 200 mW TJ

PDTB123Y

Abstract: PDTB123E PDTB113E
Contextual Info: SO T3 23 PDTB1xxxU series 500 mA, 50 V PNP resistor-equipped transistors Rev. 1 — 6 May 2014 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

PDTB123Y

Abstract: all ic data PDTB123E PDTB113E
Contextual Info: SO T3 23 PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 13 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

BSS138PW

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

2N7002BKW

Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: A Product Line of Diodes Incorporated ZUMT491 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR IN SOT323 Features Mechanical Data • • • • • • • • • • • • Low saturation voltage 500mW power dissipation IC = 1A high Continuous Current Ideally suited for space / weight critical applicatons

MARKING SMD x9

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

BCR133W

Abstract: VSO05561
Contextual Info: BCR133W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR142W

Abstract: VSO05561
Contextual Info: BCR142W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR198W

Abstract: VSO05561 MARKING WRS
Contextual Info: BCR198W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR198W WRs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR141W

Abstract: VSO05561
Contextual Info: BCR141W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=22k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR141W WDs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR116W

Abstract: VSO05561
Contextual Info: BCR116W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k; R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR116W WGs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR183W

Abstract: VSO05561
Contextual Info: BCR183W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR183W WMs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR166W

Abstract: VSO05561
Contextual Info: BCR166W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR158W

Abstract: VSO05561
Contextual Info: BCR158W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR158W WIs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR119W

Abstract: VSO05561
Contextual Info: BCR119W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k 2 C 3 1 R1 1 2 B E VSO05561 EHA07264 Type Marking BCR119W WKs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings

BCR119W

Abstract: VSO05561
Contextual Info: BCR119W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k 2 C 3 1 R1 1 2 B E VSO05561 EHA07264 Type Marking BCR119W WKs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings

BCR191W

Abstract: VSO05561
Contextual Info: BCR191W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=22k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR191W WOs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR133W

Abstract: VSO05561
Contextual Info: BCR133W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323