| BCR166 |  | Infineon Technologies | PNP Silicon Digital Transistor | Original | PDF | 42.45KB | 4 | 
| BCR166 |  | Infineon Technologies | Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: PNP; R1 (typ): 4.7 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 0.5 2mA / 0.3V; | Original | PDF | 116.07KB | 10 | 
| BCR166 |  | Siemens | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Original | PDF | 36.68KB | 4 | 
| BCR166 |  | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | PDF | 465.63KB | 37 | 
| BCR166B6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 200MW SOT23-3 | Original | PDF |  | 8 | 
| BCR166B6327HTLA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 200MW SOT23-3 | Original | PDF | 837.3KB |  | 
| BCR166E6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 200MW SOT23-3 | Original | PDF |  | 8 | 
| BCR166E6327HTSA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 0.2W SOT23-3 | Original | PDF | 837.3KB |  | 
| BCR 166E6433 |  | Infineon Technologies | TRANS DIGITAL BJT PNP 50V 100MA 3SOT-23 T/R | Original | PDF | 488.8KB | 9 | 
| BCR166E6433 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 200MW SOT23-3 | Original | PDF |  | 8 | 
| BCR166E6433HTMA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 200MW SOT23-3 | Original | PDF | 837.3KB |  | 
| BCR166F |  | Infineon Technologies | PNP Silicon Digital Transistor | Original | PDF | 488.8KB | 9 | 
| BCR 166F E6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW TSFP-3 | Original | PDF | 837.3KB |  | 
| BCR166FE6327 |  | Infineon Technologies | Digital Transistors - R1= 4,7 kOhm , R2= 47 kOhm | Original | PDF | 197.51KB | 8 | 
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| BCR166FE6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW TSFP-3 | Original | PDF |  | 8 | 
| BCR166L3 |  | Infineon Technologies | PNP Silicon Digital Transistor | Original | PDF | 488.8KB | 9 | 
| BCR 166L3 E6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW TSLP-3 | Original | PDF | 266.72KB |  | 
| BCR166L3E6327 |  | Infineon Technologies | Digital Transistors - R1= 4,7 kOhm , R2= 47 kOhm | Original | PDF | 197.51KB | 8 | 
| BCR166L3E6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW TSLP-3 | Original | PDF |  | 15 | 
| BCR166T |  | Infineon Technologies | PNP Silicon Digital Transistor | Original | PDF | 488.8KB | 9 |