MARKING JLS Search Results

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

marking code g1s

Abstract: marking g1s marking G2s
Contextual Info: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code

Q62702-F1628

Contextual Info: BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-F1628

Abstract: marking code g1s
Contextual Info: BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BCX70

Contextual Info: SIEMENS NPN Silicon AF Transistors BCW 60 BCX 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 61, BCX 71 PNP Type Marking

a31s

Abstract: Silicon N Channel MOSFET Tetrode
Contextual Info: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code Package II 5 CO h 1= D CO Q62702-F1772 CM BF 2000W NDs

marking Sanyo

Abstract: M 3211 TSOP44 M 3211 A
Contextual Info: MEMORY P A C K A G E D IM EN SIO N S 0A11 of Sanyo Memory package dimensions are illustrated below. #A11 dimensions are in mm, and dimensions which are not followed by min. or max. are represented by typical values. •N o marking is indicated. Package Dimensions 3192 unit : mm

marking jls

Contextual Info: Silicon PIN Diodes BAR 60 BAR 61 • For RF attenuation • Switching applications for frequencies above 10 MHz 3 Type Marking Ordering code tape and reel BAR 60 60 Q 62702 -A 7 8 6 Pin configuration Package SOT-143 io - E X - BAR 61 61 Q 62702- A 1 20 —o1

snr varistor

Abstract: D27L1 varistor 821KD14 sanken snr D22L D47K1 D56K8 D68K2 d33k1 D39K6
Contextual Info: WORLD PRODUCTS IN C 4ÔE D WÊ n m a b fi ODDOOOfl 1 • lilP I ASIAN STAN DARD Featuring Sanken’s New Super “S ” Series Part Number (SNR) Actual Part Marking Disc IDiameter Size (mm) Rated Voltage rtb VO US Ub (R M S) (Volts) Varistor Voltage @ 1 m A DC

241K010

Abstract: 471KD14 391kd10 431K010 471kd07 431KD07 471KD20 391kd07 471kd10 S47120
Contextual Info: E L E C T R I C A L WORLD PRODUCTS C H A R A C T E R INC 4flE D •nmahô odqqgo I S T I C S ? t ASIAN STAN DARD Featuring Sanken’s New Super “S ” Series Part Number (SNR) Actual Part Marking Disc IDiameter Size (mm) Rated Voltage AC Volts (R M S)

8G1014-Z

Abstract: 8G1044C-Z 8G1066 AC125V AC1500V 8GA1016-Z 8G2012-Z 8GA1014-Z fujisokuswitches 8G2016
Contextual Info: COPAL ELECTRONICS 8G R oH SÜtffäß 0 * y z s v 7 W ' f y & m h y jls z j y ? Washable Type Miniature Toggle Switches •4$ A -K it— ^ 7 h ffllZ $T<DT\ Zf'J > ? 'È £ t * 4 o "J V 5 r o S Æ £ i i ft 3 tz » I t t f - $ - if-0 1 ' T i ' £ t

1001-I

Contextual Info: M1MA151AT1* CASE 318D-03, STYLE 4 MAXIMUM RATINGS [T A = 25 C Rating R everse V oltage P eak R e verse V oltage Fo rw a rd C urrent F e a k Fo rw a rd C u rre n t P eak Fo rw a rd S urge C u rre n t •I = Symbol Value Unit Vr 40 Vdc vrm 40 V dc if 100 m A dc

Contextual Info: MULTIPOSITION COAXIAL SWITCHES N and SMA SPnT MINIATURES and STANDARDS up to 18 GHz 1 These models are already equiped with suppression diodes. (2) Standard products are equiped with common minus. (3) BCD driver enables also a manual reset through driver code 0000.

sot143 marking code g2

Abstract: p 1S marking SOT143 BF1009S BF1009SR BFP181 BFP181R
Contextual Info: BF1009S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input

BF1009SW

Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Abstract: BF1009 marking code g2s
Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

MIL-PRF-38535

Abstract: LT1126 QML38535 qml-38535
Contextual Info: REVISIONS DATE YR-MO-DA DESCRIPTION LTR APPROVED REV SHEET REV SHEET REV STATUS REV OF SHEETS SHEET PM IC N/A PREPARED BY RICK OFFICER STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

Contextual Info: Opto Semiconductors GaAIAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAIAs Infrared Emitter in SMT Package SFH 421 SFH 426 C\J 1 ^ C O O 2.1 1.7 0.1 typ Q_ 0.9 0 .7 C a th o d e /C o lle c to r m a rk in g C a th o d e /C o lle c to r A p p ro x . w e ig h t 0 .0 3 g

msc 1697

Abstract: 486A-486B nec 08f DLS FT 031 awg 1608 F60A1B Transistor NEC 05F 6J200A3B KULKA 9-85 1432126
Contextual Info: ENGINEERING CATALOG March, 2008 What’s New: • Flexible Stranded Wire UL Rating Information • SCCR with Fuses or Circuit Breakers • Datasheets on www.marathonsp.com • • • • FUSE HOLDERS POWER BLOCKS TERMINAL BLOCKS CUSTOM PRODUCTS www.marathonsp.com

TC1100C

Abstract: 380n
Contextual Info: rz T ^7# SGS-THOMSON M » iL iO T (S iO O S DTV64D/F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MA I N P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 6A V rrm 1500V Vf (max) 1 . 4V F E A T UR E S AND B ENE FIT S • Very fast recovery diode allows HF H. deflection.

PS2701-4

Contextual Info: rz T SGS-THOMSON ^ 7 # M » iL iO T ( S iO O S D T V 8 2 D /F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MA I N P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 6A V rrm 1500V Vf (max) 1 . 3V F E A T UR E S AND B ENE FIT S • Very fast recovery diode allows HF H. deflection.

Contextual Info: rz T ^7# SGS-THOMSON M » iL iO T (S iO O S DTV110D/F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE M A IN P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 1 OA V rrm 1500V Vf (max) 1 .5V F EA T U R E S AND B E N E FITS • Very fast recovery diode.

Contextual Info: TOSHIBA jm m TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U— MOS III TPC6003 NOTE BOOK PC APPLICATIONS PORTABLE EQUIPMENTS APPLICATIONS UNIT in nun •Low Drain - Source ON Resistance : R D S (0N)=19niQ(Typ.) •High Forward Transfer Admittance : |Y f s |= 7S (Typ.)