MARKING HU SOT23 Search Results

150X1

Contextual Info: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

transistor marking hy

Abstract: PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V
Contextual Info: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS 9 RDS on W # W # ID 9 9 $ TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY

sot 23 zwa

Abstract: KN4403S KN4402S transistor marking SA p sot-23 SOT23 MARKING ZWA Marking ZWA SOT-23 zwa sot23
Contextual Info: KEC KOflEA ELECTRONICS CO.LTD. SEMICONDUCTOR TECHNICAL DATA KN4402S/4403S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • Complementary to KN4400S/4401S. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage

smd glass diode color codes

Abstract: BA423L SOD-80 DIODE MARKING GREEN AND ORANGE SOD-80 Marking Code RED Color band DIODES GLASS PHILIPS DIODE COLOR BAND MARKING smd diode marking code SM sod80 diodes color code marking code a2 SMD diode COLOR marking codes
Contextual Info: SMD BANDSWITCH DIODES DESCRIPTION • Philips Components bandswitch diodes are intended specifically for use in radio, television, and other tuning applications. Primary attributes are extremely low dynamic capacitance and series resistance. FEATURES ■ Guaranteed maximum dynamic capacitance as low as 1.2

KDS226 LOT

Abstract: KDS226
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDS226 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SOT-23. : V f =0.9V Typ. . : trr=1.6ns(Typ.).

Contextual Info: BF550 _ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection application:;. •

6Bp SMD

Abstract: code marking 6Cp sot-23 sot-23 Marking k1p smd 1Gp d2p smd code smd 1Bp SS SMD MARKING SOT23 smd U1p smd marking code BC817 p1g SMD
Contextual Info: General Purpose SM D * NPN Transistors 11 General Purpose SMD NPN Transistors Description Features Philips C om ponents general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost

Contextual Info: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C

smd code A1t

Abstract: A1T SMD diode A1t smd 10j smd diode 134 B 360 SMD smd marking code KN PMBD2835 PMBD2836 marking H01 a1t MARKING
Contextual Info: Philips Semiconductors Product specification High-speed double diodes FEATURES PMBD2835; PMBD2836 MARKING • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 35 V and 75 V respectively PINNING MARKING CODE

BC818-16R

Abstract: BC817-16R sot-23 npn marking code cr 48mT C817 BC807 BC808 BC817 BC817-16 BC818
Contextual Info: N AMER PHILIPS/DISCRETE OLE D • bhS3T3]i OOISSGT 3 ■■ BC8Ï7 BC818 T -^ 9 -1 7 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.

ta 9690

Contextual Info: DDZX9682 - DDZX9717 SURFACE MOUNT PRECISION ZENER DIODE SPICE MODEL: DDZX9688 DDZX9689 DDZX9690 DDZX9691 DDZX9692 DDZX9693 DDZX9694 DDZX9696 DDZX9697 DDZX9699 DDZX9700 DDZX9702 Features • · · · 300mW Power Dissipation on Ceramic PCB Very Tight Tolerance on VZ

DDZX9698

Abstract: Zener Diode SOT-23
Contextual Info: DDZX9682 - DDZX9717 Features • · · · · Very Sharp Breakdown Characteristics 300mW Power Dissipation on Ceramic PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current SOT-23 A B C D E Mechanical Data G H

Zener Diode SOT-23

Abstract: marking hw sot23
Contextual Info: DDZX9682 - DDZX9717 Features • · · · · Very Sharp Breakdown Characteristics 300mW Power Dissipation on Ceramic PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current SOT-23 A B C D E Mechanical Data G H

code marking HY SOT-23

Abstract: max 9694 e zener diode marking 182 DDZX9691 ALL ZENER H 48 zener diode type marking code 30C ZENER 18 2 DDZX9682 DDZX9689
Contextual Info: DDZX9682 - DDZX9717 SURFACE MOUNT PRECISION ZENER DIODE Features • · · · · Very Sharp Breakdown Characteristics 300mW Power Dissipation on Ceramic PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current

AME40

Contextual Info: AME AME40 n General Description The AME40 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 40µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ±0.50% initial tolerance. The design of the AME40 allows for a large range of load capacitances and

Contextual Info: Semiconductor, Inc. TC1223 TC1224 50 mA AND 100 mA CMOS LDOs WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ The TC1223 and TC1224 are high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for

BFT92

Abstract: BFR92 BFR92A 727 Transistor power values BFT92V
Contextual Info: 11 N AMER P H IL IP S /D IS C R E T E 2SE D b b S B ^ l O O lö lb ? S BFT92 T-3f-J7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor in a microminiature plastic envelope. It is primarily intended for use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems,

F21E

Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,

smd code marking 2A sot23

Abstract: MARKING CODE 3b sot-89 SOT-89 marking 3b marking code SS SOT23 sot-23 npn marking code cr sot143 Marking code 5B marking .H2 sot89 SOT-89 marking 3f 3B SOT-89 smd 2A sot23
Contextual Info: GENERAL PURPOSE SMD PNP TRANSISTORS DESCRIPTION • Philips Components general purpose transistors combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These transistors provide a broad selection

AME385-2.5

Contextual Info: AME AME385-2.5 n General Description The AME385-2.5 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.50% and ± 0.80% initial tolerance. The design of the AME385-2.5 allows for a large range of load

AME385-1.2

Contextual Info: AME AME385-1.2 Shunt Bandgap Voltage Reference n General Description The AME385-1.2 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.5% initial tolerance. The design of the

AME41-1.2

Contextual Info: AME AME41-1.2 n General Description The AME41-1.2 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.50% initial tolerance. The design of the

PT7M7479

Abstract: marking AA sot23-5 Marking lb sot23-5 pericom date code marking PT7M7479L HX SOT23-5 TOP marking RST sot23 marking hx PT7M7809
Contextual Info: Preliminary Data Sheet PT7M7479 Voltage Detector with Adjustable Hysteresis |

el 847

Abstract: smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12
Contextual Info: I I n t e r n a t io n a l Rec tifie r Case Outlines Bridges 140 0311} 110 0311) B1 (0.212) ¡Ö24Öj 113(0 ttO) 7 IIP » ) S.MfO.217) UO0.1M) 110(001* Case style D-70 B2 «400 Ml) I.W JIH 140(0 252) 0 30*012) 11.20(0441) • to (0.240) 3 W (P 1 2 2 ) I I— j