MARKING HJR Search Results

Contextual Info: ADVANCE M IC R O N 16 MEG X MT8D168 8 DRAM M OD ULE 16 MEG x 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 3 0 -pin SIMM Leaded 30-pin SIP 30-Pin SIMM (T-6)

2SA1163

Contextual Info: 2SA1163 SILICON PNP EPITAXIAL TYPE Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : VQgQ = —120V Excellent hjrg Linearity : hpE Ic= —0.1mA /hFE (IC = —2mA) = 0.95 (Typ.) High hp~E ; hFE = 200~700 Low Noise : NF = ldB (Typ.), lOdB (Max.)

Contextual Info: TOSHIBA 2SC2859 TOSHIBA TRANSISTOR 7 SILICON NPN EPITAXIAL PCT PROCESS < ;r iS K Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. + 0.5 3.5-as SWITCHING APPLICATIONS. •i a ii5 • 1 . 0 - 0.15 Excellent hjrE Linearity

2sc3324

Abstract: marking CB
Contextual Info: TOSHIBA 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS W ÊF mm mm Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V c e O = 120V Excellent hp^ Linearity : hFE dC = 0,1mA) / hFE (IC = 2mA) = 0,95 (Typ.) High hjrg

Contextual Info: TO SHIBA 2SA1587 2 S A 1 587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • • High Voltage : VCEO~ —120V Excellent hEE Linearity : hpE (Ic = —0.1mA) / hjrg (Iq = —2mA) = 0.95 (Typ.)

2SA1163

Contextual Info: 2SA1163 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 1 6 3 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : Vq e o —_ 120V Excellent hjrE Linearity : hpE dC - -0.1m A) / hpE dC = - 2mA) = 0.95 (Typ.)

Contextual Info: TOSHIBA 2SA1873 2 S A 1 873 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. Small Package (Dual Type) High Voltage and High Current : VC E 0= —50V, I e = - 150mA (MAX.) High hpE Excellent hjrg Linearity

Contextual Info: 2SA1163 TO SHIBA 2 S A 1 1 63 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. High Voltage : V c e O= —120V Excellent hjrg Linearity : hpE OC = - 0.1mA) / hpE dC = -2mA) = 0.95 (Typ.)

Contextual Info: 2SA1587 TOSHIBA 2 S A 1 587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • High Voltage : V q e O “ - 120V Excellent hpE Linearity : hpE (Iq = —0.1mA) / hjr^ (Iç = —2mA) = 0.95 (Typ.)

A1162

Abstract: 2SA1162 2SC2712
Contextual Info: TOSHIBA 2SA1162 2 S A 1 162 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : VCEO = —50V, IC= -150m A (M ax.) • Excellent hpE Linearity : hpE (Ic = —0.1mA) / hjrj] (Iç; = —2mA) = 0.95 (Typ.)

Contextual Info: T O SH IB A 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3324 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V q e O = 120V Excellent hpE Linearity hpE (IC = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.) High hpE

Contextual Info: SILICON NPN EPITAXIAL TYPE HN1C01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package Dual Type High Voltage and High Current : V q ]jo = 50V, I q = 150mA (Max.) High hjrE : hpg = 120—400 Excellent hpE Linearity

Contextual Info: SILICON PNP EPITAXIAL TYPE HN2A01FU U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package Dual Type • High Voltage and High Current : V q e o ——50V, I q = —150mA(Max.) • High h p g : hj>E = 120-400 • Excellent hjrj; Linearity

Contextual Info: 2SA1587 SILICON PNP EPITAXIAL TYPE U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : V q e o = —120V Excellent hjrg Linearity :hpE Ic = —0.1m A /hfE (Ic = —2mA) = 0.95 (Typ.) High hpE : hj'E = 200~700 Low Noise : NF = ldB (Typ.), 10dB(Max.)

marking POJ

Abstract: 2SA1204 2SC2884
Contextual Info: TO SHIBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 1.6 M AX — High DC Current Gain : hjrE = 100~320 Suitable for Output Stage of 1 Watts Amplifier Pq = 1~2W (Mounted on Ceramic Substrate)

2SC3326

Contextual Info: TOSHIBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS + 0.5 High Emitter-BaseVoltage : Ve b O ~ 25V (Min.) High Reverse hjrg : Reverse hjrg = 150 (Typ.) (VCE= —2V, IC = —4mA)

Contextual Info: T O SH IB A TENTATIVE HN3B02FU TOSHIBA TRANSISTOR SILICON PNP-NPN EPITAXIAL TYPE PCT PROCESS HN3B02FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.1 i 0,1 Ql High Voltage : V q e o = —50 V High Current : Iç = —150 mA (Max.) High hjrE

SC4213

Abstract: toshiba 4213 transistor 4213 2SC4213
Contextual Info: 2SC4213 TOSHIBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR MUTING AND SWITCHING APPLICATIONS 2.1 ¿ 0.1 High Emitter-Base Voltage : Ve b O ~ 25V (Min.) High Reverse hjrg : Reverse hjrE = 150 (Typ.) (VCE = —2V, IC = —4mA)

transistor 4213

Abstract: 2SC4213 SC4213
Contextual Info: 2SC4213 TO SH IBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package Ve BO = 25V (Min.)

2SC3326

Abstract: marking cc
Contextual Info: TO SH IBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package + 0.5

2SC4181

Abstract: 2SC41 2SC4181A
Contextual Info: DATA SHEET NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC4181,2SC4181A AUDIO FREQUENCY AMPLIFIER,SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES • High DC Current Gain : hjrE = 1 0 0 0 to 3 2 0 0 • Low V c E s a t : v CE(sat) = 0 .0 7 V T Y P . •

ir131

Contextual Info: TOSHIBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6 M A X 4.6 M A X . • 1.7 M A X High DC Current Gain and Excellent hjrg Linearity : hFE (1) = 140-600 (VCE = IV, IC = 0.5A)

marking IAY

Abstract: 2SA1832F 2SC4738F
Contextual Info: 2SA1832F TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS Unit in mm 1.6 ± 0.1 • 0.85 ± 0.1 High Voltage and High Current : V c e O = - 5 0 V, I q = - 1 5 0 mA (max.)

Contextual Info: TOSHIBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS • 1.6 ± 0.1 High Voltage and High Current ; V0 EO = 5OV, Iq = 150mA (Max.) Excellent hpg Linearity : hpE dC = 0.1mA) / hpE dC = 2mA) = 0.95 (Typ.)