MARKING H7 SOT23 Search Results

marking H7 sot23

Abstract: LDTC125TLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC125TLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

SN74AUP1G17-EP

Contextual Info: SN74AUP1G17 www.ti.com SCES579I – JUNE 2004 – REVISED MARCH 2010 LOW-POWER SINGLE SCHMITT-TRIGGER BUFFER Check for Samples: SN74AUP1G17 FEATURES 1 • • • • • • • Available in the Texas Instruments NanoStar Package Low Static-Power Consumption

SN74AUP1G17-EP

Contextual Info: SN74AUP1G17 www.ti.com SCES579I – JUNE 2004 – REVISED MARCH 2010 LOW-POWER SINGLE SCHMITT-TRIGGER BUFFER Check for Samples: SN74AUP1G17 FEATURES 1 • • • • • • • Available in the Texas Instruments NanoStar Package Low Static-Power Consumption

SN74AUP1G17-EP

Contextual Info: SN74AUP1G17 www.ti.com SCES579I – JUNE 2004 – REVISED MARCH 2010 LOW-POWER SINGLE SCHMITT-TRIGGER BUFFER Check for Samples: SN74AUP1G17 FEATURES 1 • • • • • • • Available in the Texas Instruments NanoStar Package Low Static-Power Consumption

bav70 H7

Abstract: h7 sot23 diode MARKING H7 SOT-23 BAV70
Contextual Info: SEMICONDUCTOR BAV70 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P VRM 85 V Reverse Voltage VR 80 V Continuous Forward Current

DIODE

Abstract: BAV70
Contextual Info: SEMICONDUCTOR BAV70 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION FEATURES E B L L ・Small Package : SOT-23. ・Fast Reverse Recovery Time : trr=1.6ns Typ. . D ・Low Forward Voltag : VF=0.9V(Typ.). H ・Small Total Capacitance : CT=0.9pF(Typ.).

sot-23 MARKING CODE ZA

Abstract: marking code AD B557 BSS79C BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A
Contextual Info: i FERRANTI T II semiconductorsL BSS79B, C NPN Silicon Planar General P urpose S w itc h in g T ra n sistors DESCRIPTION These devices are intended fo r use in sm all and m edium signal a m p lifica tio n ap plication s fro m d.c. to radio frequencies. Encapsulated in the popular SOT-123 package the device is

MARKING U1

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3875 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES DIM A B C D E G H J K L M N P • Excellent Iife Linearity : hFE 0.1m A /hFE(2m A )=0.95(Typ.). • High Iife • hFE=70~ 700.

TR MARKING 6t sot23

Abstract: ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 BSS82B
Contextual Info: semiconductors *FERRANTI BSS82B, C PNP Silicon Planar General Purpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in sm all and m edium signal a m p lifica tio n a p plication s fro m d.c. to radio frequencies. Encapsulated in th e po pu lar SOT-23 package th e device is

SST113

Contextual Info: SST111 SERIES N-Channel JFETs The SST111 Series is the surface mount equivalent of our J111 device types. Its low cost and ros ON make it a good choice for an all-purpose analog switch, while its high g(s and good high-frequency response also make this product useful in a high-gain amplifier mode.

2F PNP SOT23

Abstract: MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS SMD MARKING CODE 4E marking codes SOT iSS marking c7 sot-23 MARKING H7 SOT-23
Contextual Info: IOW NOISE SMI TRANSISTORS DESCRIPTION •Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed lowcurrent specifications for noise, gain and saturation voltages.

Contextual Info: Advanced Power Electronics Corp. APE8867 300mA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTIOON Application for Extreme Low Output Voltage The APE8867 series are low dropout, positive linear regulators with very low quiescent current. The APE8867 can supply 300mA output current with a low dropout voltage

SOT-23 marking l31

Abstract: wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31
Contextual Info: FERRANTI * semiconductors FMMT2369 NPN Silicon Planar High Speed Switching Transistor DESCRIPTION This device is intended specificelly fo r use in high speed, lo w current switching epplications. Encapsulated in th e popular SOT-213 package these devices are designed specifically fo r use in thin and thick film

L6 SOT-23

Abstract: marking code 20L SOT-23 BSS69R BSS69 BSS70R L6 sot 23 FMMT2369 BSS66 BSS70 BSS67
Contextual Info: I FERRANTI BSS69 BSS70 T 11sem iconductors L PNP S ilicon Planar M e d i u m P o w e r S w i t c h i n g Transistors DESCRIPTION These devices are intended for general purpose switching applications. Complementary to the BSS66 and BSS67 Encapsulated in the popular SOT-23 package, these

BSS66

Abstract: cg 5763 BSS66R BSS67R FMMT2369 BFQ31 BSS67 160i BC 5763 BSS69
Contextual Info: i FERRANTI BSS66 BSS67 T IIsemiconductors L NPN Silicon Planar M e d iu m Power S w itc h in g Transistors DESCRIPTION These devices ere intended fo r general purpose switching applications. Com plementary to th e BSS69 and BSS70. Encapsulated in th e popular SOT-23 package, these

2222a sot23

Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
Contextual Info: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.

Contextual Info: FJV4103R FJV4103R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV3103R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

FJV3103R

Abstract: FJV4103R
Contextual Info: FJV4103R FJV4103R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV3103R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

FJV3101R

Abstract: FJV4101R fjv4101
Contextual Info: FJV3101R FJV3101R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector

h7 sot23 diode

Abstract: marking A82 SOT-23 marking A82 diode marking EY diode A82
Contextual Info: BAS21 BAS21 CONNECTION DIAGRAM 3 3 3 A82. 2 SOT-23 1 2 2 NC 1 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units W IV Working Inverse Voltage

FJV3101R

Abstract: FJV4101R fjv4101
Contextual Info: FJV4101R FJV4101R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV3101R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector

FJV3102R

Abstract: FJV4102R
Contextual Info: FJV3102R FJV3102R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

FJV3103R

Abstract: FJV4103R
Contextual Info: FJV3103R FJV3103R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

FJV3102R

Abstract: FJV4102R
Contextual Info: FJV4102R FJV4102R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV3102R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit