MARKING G11 Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors built-in resistors EMG11 dual digital transistors (NPN+NPN) SOT-553 FEATURES Two DTC123JCA chips in a package 1 Marking: G11 Equivalent circuit: Absolute maximum ratings (Ta=25℃) Symbol

BF999

Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

bios programmer

Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Contextual Info: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP

BB515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package

block diagram of crusoe processor

Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Contextual Info: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz

Contextual Info: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking

Bb515

Abstract: bf999
Contextual Info: BF 999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package

bb515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package

c22e

Abstract: Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450
Contextual Info: PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance BF 550 Type Marking Ordering Code

Contextual Info: TETMhEl 0Q0b31ß b£^ H PR X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX INC bMED r— MARKING RA20 4800A G & fl& rSl PUTDOSG

BF450

Abstract: BF451 BF 450 IY21 Q62702-F312 SIEMENS marking IC marking jw SiEMENS PM 350 92 bf 451 tag 451
Contextual Info: SIEMENS BF 450 BF 451 PNP Silicon RF Transistors • For common emitter AM and FM stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 450 BF 451 - Q62702-F312 Q62702-F313 Pin Configuration 1 2 3 E C Package1 B TO-92 Maximum Ratings

marking 34

Abstract: G110 UPG110B
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. FA 4.5 MAX LEAD 1 & 3 0.6 ± 0.06 3 2 4.6 MAX 4 MARKING 4.1 MIN +0.2 0.7 -0.1 4.1 MIN 1 LEAD 2 & 4 0.4 ± 0.06 1.48 MAX 0.1 ± 0.06 PART NUMBER

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 1 20 LOC REVISIONS DIST FT ALL RIGHTS RESERVED. BY - 20 2 3 P LTR G11 DESCRIPTION DATE REVISED PER ECO-14-000579 DWN APVD NK 10MAY2014 MM POLARIZATION KEY SLOT D D PRELIMINARY - 0.8µm GOLD

XC1700E

Abstract: 1736e xilinx 8 pin dip HW-130 SO20 XC1700 XC1701 17128e 17256e xilinx SO20 MARKING CODE
Contextual Info: g11 1 4 R DS027 v3.3 June 13, 2005 XC1700E, XC1700EL, and XC1700L Series Configuration PROMs Product Specification 8 Features • Low-power CMOS Floating Gate process • • XC1700E series are available in 5V and 3.3V versions • XC1700L series are available in 3.3V only

G501

Contextual Info: PRODUCT DATA SHEET Type Incandescent Size G11 G-3½ Rating 6.5V 300mA Description 11mm Edison screw lamp Part No. G501-5 LIGHT OUTPUT (Lm) Min. Nom. Max. 10 12 14 LIFE Hours 4,000 Dimension in mm. TEST VOLTS 6.5 Min. 270 CURRENT (mA) Nom. Max. 300 330 NOTES:

TDF024

Contextual Info: PRODUCT DATA SHEET Type Incandescent Size G11 G-3½ Rating 6.5V 1W Description 11mm Edison screw lamp Part No. G473-5 LIGHT OUTPUT (Lm) Min. Nom. Max. 4.8 6.0 7.2 LIFE Hours 3,000 Dimension in mm. TEST VOLTS 6.5 Min. 135 CURRENT (mA) Nom. Max. 150 165 NOTES:

G1184-18

Abstract: to263-5 capacitor 100uf 25v applications electrolytic capacitor 100uF 50v of electrolytic capacitor 100uf 25v 100uF 25v capacitor TO-263-5 Package G1184-25 G1184TG1U Voltage Regulator ATX
Contextual Info: G1184 Global Mixed-mode Technology Inc. 4A Ultra Low-Dropout Linear Regulator Features „ „ „ „ „ „ General Description The G1184 is a low dropout linear regulator to provide well regulated supply for applications requiring lower voltage from such as, 3.3V PC ATX

XC1700E

Abstract: xilinx 1736e 1702L 1702l transistor 17512L xilinx 8 pin dip XC1701 HW-130 SO20 XC1700
Contextual Info: g11 1 4 R DS027 v3.2 September 7, 2004 XC1700E, XC1700EL, and XC1700L Series Configuration PROMs Product Specification 8 Features • Low-power CMOS Floating Gate process • • XC1700E series are available in 5V and 3.3V versions • XC1700L series are available in 3.3V only

Contextual Info: Extract from the online catalog EMG 45-RELS/K2-G110 Order No.: 2950721 The illustration shows version EMG 45-RELS, with plug-in socket for cradle relay, size 2 Relay module, with plug-in base for KAMMRELAIS size 2, contact: B

Contextual Info: Extract from the online catalog EMG 22-RELS/K1-G110 Order No.: 2950420 The illustration shows version EMG 22-RELS, with plug-in socket for cradle relay, size 1 Relay module, with plug-in base for KAMMRELAIS size 1, contact: B

Contextual Info: Extract from the online catalog EMG 37-RELS/K2-G110 Order No.: 2946735 The illustration shows version EMG 37-RELS, with plug-in socket for cradle relay, size 2 Relay module, with plug-in base for KAMMRELAIS size 2, contact: F

ak 957 1542 d

Abstract: AN-994 IRL530N IRL530NL IRL530NS
Contextual Info: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11