MARKING E1 SOT363 Search Results

BFS17S

Abstract: VPS05604 NPN marking MCs
Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ic7001

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

marking s6 sot363

Contextual Info: CYStech Electronics Corp. SOT-363 Dimension Style: Pin 1. Emitter1 E1 Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6 *:Typical

Q62702-C2377

Abstract: vk sot-363 marking 7S Marking wms sot marking code vk, sot-363
Contextual Info: SIEMENS BCR 183S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, 4 driver circuit 5 6 • Built in resistor R1 = 10kii, R2 = 10k£2 » ^ 3 2 1 Marking Ordering Code Pin Configuration BCR183S WMs CM II CO Q62702-C2377 1=E1 2=B1

Contextual Info: SIEMENS BCR183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit ►Built in resistor Ri = 10kii, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363

183S

Abstract: Q62702-C2377
Contextual Info: BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

lr1551

Abstract: SOT363-6 003 SOT363 SOT363 6
Contextual Info: Leshan Radio Co ., Ltd 2.7Ω Ω Low Voltage SPDT Analog Switch in 6-pin SOT363 LR1551 Description Features Wide Power Supply Range: 1.8V to 5.5V The LR1551 is a Single Wide-Bandwidth, fast single- High Bandwidth: 300MHz pole double-throw SPDT CMOS switch featuring an

SOT363-6

Abstract: BL1551 SOT363 6 003 SOT363 marking CL SOT363 sot363-6 marking SOT-363-6
Contextual Info: BL1551—Single SPDT Analog Switch 2.7Ω Ω Low Voltage SPDT Analog Switch in 6-pin SOT363 Description Features Wide Power Supply Range: 1.8V to 5.5V The BL1551 is a Single Wide-Bandwidth, fast single- High Bandwidth: 300MHz pole double-throw SPDT CMOS switch featuring an

Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been

transistor smd yw

Abstract: BAP70AM array marking 20 NXP
Contextual Info: BAP70AM Silicon PIN diode array Rev. 01 — 20 November 2006 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features • ■ ■ ■ High voltage current controlled RF resistor for RF attenuators

PUMH24

Abstract: TRANSISTOR SMD MARKING CODES TRANSISTOR SMD CODE PACKAGE SOT363
Contextual Info: PUMH24 NPN/NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Rev. 03 — 15 October 2004 Product data sheet 1. Product profile 1.1 General description NPN/NPN resistor-equipped transistors in a SOT363 SC-88 SMD plastic package. 1.2 Features

Contextual Info: UM5204EEXF Quad Channel Low Capacitance ESD Protection Array UM5204EEAF UM5204EEBF UM5204EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5204EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been

MARKING CODE M1 sot363

Abstract: IC SMD MARKING CODE M1
Contextual Info: BCM847BS NPN matched double transistor; ∆hFE = 10 % Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description NPN matched double transistor in a SOT363 SC-88 SMD plastic package. Matched version of BC847BS. The transistors are fully isolated internally. PNP equivalent:

smd transistor marking A9

Abstract: smd code A9 3 pin transistor TRANSISTOR SMD MARKING CODE a9 transistor marking A9 smd transistor marking nv
Contextual Info: BCM857BS PNP matched double transistor; ∆hFE = 10 % Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description PNP matched double transistor in SOT363 SC-88 SMD plastic package. Matched version of BC857BS. The transistors are fully isolated internally. NPN equivalent:

sot363 marking DATE code

Abstract: data sheet for all smd components marking 20 sot363 smd schottky diode sot363 marking code C5 SMD diode sot363 marking code cd dual sot363 marking E1 sot363 SMD Packages smd transistor sot363
Contextual Info: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 01 — 17 January 2005 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very

Contextual Info: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very

nxp marking code SOT363

Abstract: BAT54XY
Contextual Info: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very

HSMS-285x model

Abstract: HSMS-285X marking code e6 sot363 AN1124 HSMS-2850 SOT143 Marking A1 PIN DIODE MARKING CODE AB SOT Packaged A1 4 PIN sot-23 Marking B1 HSMS-286* reliability
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Demonstration Circuit Boards > DEMO-HSMS285-0 DEMO-HSMS285-0 Demonstration circuit board for HSMS-2850, HSMS-2852 and HSMS-2855 Description Lifecycle status: Active Features 2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode

Contextual Info: BAP70AM Silicon PIN diode array Rev. 3 — 27 January 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits      High voltage current controlled RF resistor for RF attenuators