MARKING D17 Search Results

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

D1733

Abstract: 2SD1733F5 MARKING CODE f5 transistor BA 14 2SB1181 TA-10-03 2SD1733FS BA, TRANSISTOR
Contextual Info: 2SD1733F5 Transistor, NPN Features • available in CPT F5 SC-63 package • package marking: D1733-AQ, where ★ is hFE code and Q is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage

d1758

Abstract: Transistor d1758 transistor F5 2SD1758F5 2SD1758 E 32 TRANSISTOR d1758 s d1758 transistor transistors d1758
Contextual Info: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package package marking: D1758*t), where ★ is hFE code and □ is lot number general purpose transistor with ratings as follows: — 2SD1758F5 (CPT F5) o 5.1 1' • X

d1760

Abstract: 821 transistor
Contextual Info: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760^Q, where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A

D1758

Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
Contextual Info: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)

TRANSISTOR d1760

Abstract: 2SD1760F5
Contextual Info: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760*Q , where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A

D1733

Abstract: transistors 2sd 2500 2SD1733F5 transistor 239
Contextual Info: 2SD1733F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1733-*Q, where ★ is hFE code and □ is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage

3300uf 350v

Abstract: B096 E157 transistor D195 C115 D130 D155 E171 transistor d115 B115
Contextual Info: Aluminum Electrolytic Capacitors MEK Features ‧Endurance with ripple current: 85℃, 5,000 hours ‧ RoHS Compliance Sleeve & Marking Color: Black & Golden SPECIFICATIONS Items Performance -40℃ ~ +85℃ Category Temperature Range at 120Hz, 20℃ ±20%

V 904 RL 805

Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures

D1700

Abstract: DS-323 DS323
Contextual Info: 237 KWIK-CHANGE*DESIGNATION STRIPS DOUBLE HEIGHT Kwik-Change Designation Strip DS311 (double height) DOUBLE HEIGHT DESIGNATION STRIPS Part No. DS311 DS312 DS313 Description Kit (double height) Includes: 1-mounting strip (17“ long) 1-cover 1-marking strip sheet

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

bios programmer

Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Contextual Info: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP

block diagram of crusoe processor

Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Contextual Info: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz

marking pk sot23

Abstract: Diode BAV99 SOT23
Contextual Info: Surface Mount Switching Diodes 350mW Switching Diodes/SOT23 Type Number Marking Code* Peak Reverse Voltage Maximum Reverse Current @ 25°C LL > vR v <§ U. Ir > PRV Maximum Forward Voltage Drop Capacitance r = V F = 0 Reverse Max. Power Pin Identity Recovery Dissipation See Figs.

BP2G1

Abstract: GP2X1 BP2G sp marking GP2X WP4N BP4P wp4f1 BP4U D17I
Contextual Info: PRODUCT CHANGE NOTICE PCN Form D4-E000-73 PCN #09-007 NOTIFICATION DATE: April 24, 2009 MODELS FAMILY AFFECTED: BP, GP, SP, WP (Power Splitters) D1, D2 (Directional Couplers) See Attached List for Specific Models EXTENT OF CHANGE: Device marking from ink to Laser

Contextual Info: Surface Mount Zener Diodes 300mW Zener Voltage @ I ZT = 5 mA Marking Code Operating Temperature: -40 o C to 150oC Min. Max Max. Zener Resistance @ lZT = 5 mA f = 1KHz Max. Zener Impedance @ lZT = 1 mA f = 1KHz Typical Temp. Coeff. @ IZT = 5 mA Min. Rev. Voltage

2SA812

Abstract: 2SC1623
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD <R> PACKAGE DRAWING Unit: mm 0.4 +0.1 –0.05 2.8 ± 0.2 2 1 3 Marking 1. Emitter 2. Base 3. Collector 0 to 0.1 1.1 to 1.4 0.16 +0.1 –0.06 0.3 TYP. 2.9 ± 0.2 VCBO −60 V

Contextual Info: Data Sheet Rev.1.1 29.11.2010 2GB ECC DDR2 – SDRAM DIMM Features: • 240 Pin ECC UDIMM SEU02G72D4BH2MT-30R 2GB PC2-5300 in FBGA Technology RoHS compliant •    Options:     Data Rate / Latency DDR2 667 MT/s CL5 DDR2 533 MT/s CL4 Marking

B 728

Contextual Info: DESCRIPTION BY APPD DATE B RELEASED PER ER18293 CTC 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. REV CY 09/04/09 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT, FERRULE: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710

Contextual Info: DESCRIPTION BY APPD DATE C REVISED PER ECR-ER20178 CTC 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. REV CY 11/17/09 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710

Contextual Info: DESCRIPTION BY APPD DATE B REVISED PER ECR-ER21004 CTC 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. REV CY 12/21/09 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT, FERRULE: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710

Contextual Info: DESCRIPTION BY APPD DATE A RELEASED PER ER14706 CTC 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. REV CY 04/15/09 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT, FERRULE: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710

Contextual Info: DESCRIPTION BY APPD DATE B REVISED PER ECR-ER22654 CTC 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. REV CY 03/17/10 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT, FERRULE: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710

Contextual Info: REV REVISED PER ECR-ER22654 BY APPD DATE CTC B 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. DESCRIPTION CY 03/15/10 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT, FERRULE: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710