MARKING CODE YA TRANSISTOR Search Results

marking code YA Transistor

Abstract: TRANSISTOR MARKING CODE YA ya marking code STD361 marking code YA code Transistor ya
Contextual Info: STD361 NPN Silicon Transistor PIN Connection Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Switching Application SOT-89 Ordering Information

Contextual Info: STD361 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VC E ( S A T =0.2V Typ. @IC /IB =3A/150mA) • Suitable for low voltage large current drivers • Switching Application Ordering Information

2SC5053

Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate

KST-8007-002

Abstract: MARKING CODE YA TRANSISTOR marking ya STD361
Contextual Info: STD361 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Switching Application Ordering Information Type NO.

Contextual Info: STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

J3005

Abstract: BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020
Contextual Info: ö le D TELEFUNKEN ELECTRONIC • a^soQ^b o o o s m 'W BF 311 TidtifpyKlKilMl electronic T - z t - t f Creative Tech nologïes Silicon NPN Epitaxial Planar RF Transistor I Applications; Video IF amplifier stages configuration, especially in video IF power stages

STD361

Abstract: Transistor marking ya
Contextual Info: STD361 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Switching Application Ordering Information Type NO.

stn440

Abstract: STN4402 Stanson Technology
Contextual Info: 02 STN44 STN440 N Channel Enhancement Mode MOSFET 12A DESCRIPTION STN4402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

SC70-6L

Abstract: STN6335 marking 6l marking s1 sot363 marking 320 SOT-363 SC706L marking 52 sot-363 Dual N
Contextual Info: 5 STN633 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A DESCRIPTION STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

P channel MOSFET 10A

Abstract: stp630 MARKING CODE ca sot363 high current sot-363 p-channel mosfet Marking Code 3 sc70-6l sot363 marking code ca STP6308 marking 6l SC70-6L p channel mosfet 10a 20v
Contextual Info: P630 8 ST STP 6308 Dual P Channel Enhancement Mode MOSFET -1.0A DESCRIPTION STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

SOP8 Package

Contextual Info: 39 2 STN4 STN439 392 N Channel Enhancement Mode MOSFET 13A DESCRIPTION STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

diode 68A

Abstract: STN4346
Contextual Info: 346 STN4 STN4346 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

40V 60A MOSFET

Abstract: STN45 STN454 STN4526 STN4546
Contextual Info: 46 STN45 STN454 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

SC70-6L

Abstract: marking 52 sot363 sot363 marking code 385 SOT-363 mosfet marking s1 sot363 marking 52 sot-363 mosfet 400 V 10A Dual N sot363 marking code ca MARKING CODE ca sot363
Contextual Info: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

Contextual Info: UMY3N / UNZ2N / FMY3A / FMY4A / IMZ2A Transistors I General Purpose Transistor Power Management UMY3N / UMZ2N / FMY3A / FMY4A / IMZ2A •Features 1 ) Two 2SA1037AK and 2SC1412K chips are housed in a UMT or SMT package. •Absolute maximum ratings (Tas 25 £}

Q62702-C2594

Contextual Info: SIEMENS BCP 51M . BCP 53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN BCP 51M AAs Q62702-C2592 BCP 52M AEs Q62702-C2593

marking code 8fn

Contextual Info: PNP Silicon High-Voltage Transistors BFN 37; BFN 39 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage Complementary types: BFN 36/38 NPN Type Marking O rdering code (12-m m tape)

Contextual Info: 32E D • fl23b320 GG1721S 5 H SIP PNP Silicon High-Voltage Transistors PZTA 92; PZTA 93 SIEMENS/ SP CLi SEMICONDS _ T - 3 3 -* 7 Type Marking Ordering code 12-mm tape Package* PZTA 92 PZTA 92 Q62702-Z2037 SOT-223 PZTA 93 PZTA 93 Q62702-Z2038

5b1 transistor

Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type

Contextual Info: 32E D • Ö23b32ü 0017251 3 ■ SIP NPN Silicon Transistors SMBT 6428 SMBT 6429 17 SIEMENS/ SPCL-. SEMICONDS • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering code for

Contextual Info: BSP 50. BSP 52 NPN Silicon Darlington Transistors 32E D • ISIP 0231=320 Q017Q73 Q SIEMENS/ SPCL ■, SEMICONDS T '3 3 - 3 - 7 • High collector current • Low collector -emitter saturation voltage • Complementary types: BSP 60.BSP 62 PNP Type Marking

Contextual Info: • SIP 32E D ■ 023b32G QQlbö?^ PNP Silicon High-Voltage Transistors B F N 37; B F N 39 _ SIEMENS/ SPCLi SEMICONDS T - 33-/7 Suitable lor video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage

code Transistor ya

Abstract: MARKING CODE YA TRANSISTOR
Contextual Info: HITACHI 2SC5137-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j - 10 GHz typ. • High gain, low noise figure PG = 16.5 dB typ., NF = 1.5 dB typ. at f = 900 MHz 1. Emitter 2. Base

Contextual Info: 3 S E D m flE3 ti3 2 0 0 0 1 b ô 7 5 NPN Silicon High-Voltage Transistors I S IP BFN 36; BFN 38 _ SIEMENS/ SPCL-i SEMICONDS Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage