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UMW STN4438 MOSFET N-CH 60V 8.2A SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STN4438	Cut Tape	2,976		1	1 $0.71 10 $0.44 100 $0.28 1000 $0.19 10000 $0.19	Buy Now
	STN4438	Digi-Reel	2,976		1	1 $0.71 10 $0.44 100 $0.28 1000 $0.19 10000 $0.19	Buy Now
	STN4438	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.14	Buy Now

STN44 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
STN*4440 Abstract: STN4440 Contextual Info: STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN4440 STN4440 0V/10 STN*4440	PDF
MOSFET 30v sop-8 Abstract: STN4412 diode 68A transistor 8P Package Marking 8A STN44 Contextual Info: STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN4412 STN4412 MOSFET 30v sop-8 diode 68A transistor 8P Package Marking 8A STN44	PDF
MOSFET 30v sop-8 Abstract: STN4488 Contextual Info: STN4488L Dual N Channel Enhancement Mode MOSFET 20A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.	Original	STN4488L STN4488L 0V/20A, 0V/18A, MOSFET 30v sop-8 STN4488	PDF
STN442 Abstract: STN44 Stanson Technology MOSFET 20V 80A Contextual Info: 26 STN44 STN442 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN4426 STN442 STN4426 STN442 STN44 Stanson Technology MOSFET 20V 80A	PDF
STN442D Abstract: STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley Contextual Info: STN4 42 D STN442 42D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE	Original	STN442D STN442 STN442D O-252 O-251 0V/20 O-252 O-251 STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley	PDF
Contextual Info: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN4438 STN4438 Code120	PDF
Contextual Info: STN442D N Channel Enhancement Mode MOSFET 27.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE	Original	STN442D STN442D O-252 O-251 0V/20 O-252 O-251	PDF
STN4488 Contextual Info: STN4488L N Channel Enhancement Mode MOSFET 20.0A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.	Original	STN4488L STN4488L 0V/20A, 0V/18A, STN4488	PDF
Contextual Info: STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN4416 STN4416 0V/10A,	PDF
stn440 Abstract: STN4402 Stanson Technology Contextual Info: 02 STN44 STN440 N Channel Enhancement Mode MOSFET 12A DESCRIPTION STN4402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN4402 STN440 STN4402 0V/12A, 0V/10A, stn440 Stanson Technology	PDF
STN44 Abstract: marking code 82A Contextual Info: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN4438 STN4438 STN44 marking code 82A	PDF
Contextual Info: STN4480 N Channel Enhancement Mode MOSFET 14.0A DESCRIPTION STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN4480 STN4480 0V/14	PDF
Contextual Info: STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN4412 STN4412	PDF