MARKING CODE VISHAY SILICONIX Search Results

Part Marking Information

Abstract: VISHAY MARKING CODE
Contextual Info: Part Marking Information www.vishay.com Vishay Siliconix DEVICE: MICRO FOOT for IC product only A B OW X X O = Pin 1 Indicator W = Week Code XX = Part Number Code (see datasheet for code) The current marking strategy is reflected. Contact your local sales representative for historical marking strategies for these

SI5402DC

Contextual Info: Si5402DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFET 1 D D D D D D G G Marking Code S AA XX Lot Traceability and Date Code S Part # Code

Contextual Info: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code

Si5404BDC

Contextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code

S1217

Abstract: TO-92-18RM
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 

Si5447DC

Contextual Info: Si5447DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.076 at VGS = - 4.5 V - 4.8 - 20 0.110 at VGS = - 2.5 V - 4.0 0.160 at VGS = - 1.8 V - 3.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 1.8 V Rated

SC-89

Abstract: Si1065X Si1065X-T1-GE3 si1065
Contextual Info: Si1065X Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.130 at VGS = - 4.5 V 1.18 0.158 at VGS = - 2.5V 1.07 0.205 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si1903DL

Abstract: Si1903DL-T1
Contextual Info: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.995 @ VGS = −4.5 V "0.44 1.190 @ VGS = −3.6 V "0.40 1.80 @ VGS = −2.5 V "0.32 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS

C11040

Contextual Info: New Product SiB437EDKT Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.034 at VGS = - 4.5 V - 9a 0.063 at VGS = - 1.8 V -5 0.084 at VGS = - 1.5 V -3 0.180 at VGS = - 1.2 V -1 • Halogen-free According to IEC 61249-2-21

74249

Abstract: Si3475DV Si3475
Contextual Info: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

SiA421DJ-T1-GE3

Contextual Info: SiA421DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Si1473DH

Abstract: diode marking code "27C" SOT 23 S1006 diode marking code
Contextual Info: Si1473DH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 2.7 0.145 at VGS = - 4.5 V - 2.7 VDS (V) - 30 Qg (Typ.) 4.1 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3471CDV-T1-E3

Contextual Info: New Product Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 VDS (V) - 12 0.048 at VGS = - 1.8 V • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)

marking code DH

Contextual Info: New Product Si5905BDC Vishay Siliconix Dual P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.080 at VGS = - 4.5 V - 4a 0.117 at VGS = - 2.5 V - 4a 0.170 at VGS = - 1.8 V - 3.5 Qg (Typ) 4 nC • TrenchFET Power MOSFETs

SiA414DJ

Abstract: SiA414DJ-T1-GE3
Contextual Info: New Product SiA414DJ Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 4.5 V 12 0.013 at VGS = 2.5 V 12 0.016 at VGS = 1.8 V 12 0.022 at VGS = 1.5 V 12 0.041 at VGS = 1.2 V 12 VDS (V) 8 • Halogen-free

SC-75

Abstract: SiB911DK
Contextual Info: New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.295 at VGS = - 4.5 V - 2.6 0.420 at VGS = - 2.5 V - 2.2 0.560 at VGS = - 1.8 V - 1.9 Qg (Typ.) 1.6 nC • Halogen-free • TrenchFET Power MOSFET

SC-70-6

Abstract: SiA921EDJ
Contextual Info: SiA921EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

VN0606L

Abstract: VN66AFD TN0601L
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

SC-70-6

Abstract: SiA811ADJ-T1-GE3
Contextual Info: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET

Si3805DV-T1-E3

Abstract: Si3805DV-T1-GE3
Contextual Info: New Product Si3805DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a - 3.3 Qg (Typ.) 0.084 at VGS = - 10 V 0.108 at VGS = - 4.5 V - 2.9 4 nC 0.175 at VGS = - 2.5 V - 2.3 RDS(on) (Ω) - 20 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

2N7002E

Abstract: 2N7002E-T1
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage

71331

Contextual Info: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

SiA929DJ

Contextual Info: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual