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    MARKING CODE UJ GENERAL SEMICONDUCTOR Search Results

    MARKING CODE UJ GENERAL SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GP-IE156327SS-002
    Amphenol Cables on Demand Amphenol GP-IE156327SS-002 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 2m PDF
    GP-IE156327SS-001
    Amphenol Cables on Demand Amphenol GP-IE156327SS-001 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 1m PDF
    GP-IE156327SS-003
    Amphenol Cables on Demand Amphenol GP-IE156327SS-003 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 3m PDF
    GP-IE156327SS-005
    Amphenol Cables on Demand Amphenol GP-IE156327SS-005 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 5m PDF
    GP-IE156327SS-006
    Amphenol Cables on Demand Amphenol GP-IE156327SS-006 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 6m PDF

    MARKING CODE UJ GENERAL SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Central CMPT2907A Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose


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    cmpt2907aot-23 PDF

    transistor 1kp

    Abstract: transistor 406 specification marking code 1kp 1Lp marking BCV61 TRANSISTOR 404 LC marking code transistor
    Contextual Info: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pairs. 2 collector TR1 APPLICATIONS


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    bcv61ot143bbcv62bcv61a+8bcv61bbcv61ctransistor 1kptransistor 406 specificationmarking code 1kp1lp markingtransistor 404lc marking code transistor PDF

    CMPT2222A

    Contextual Info: Central Sem iconductor Corp. CMPT2222A NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


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    cmpt2222aot-23 PDF

    SOT323 Marking LE

    Abstract: T31G
    Contextual Info: Philips Semiconductors Product specification PNP general purpose transistor 2PB1219A FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 50 V) 1 base • Low collector-emitter saturation voltage (max. 600 mV). 2 emitter 3


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    ot3232pd1820a2pb1219a2pb1219aq+62pb1219ar2pb1219asmam048powe19assot323 marking let31g PDF

    marking code H.5 Sot 23-5

    Abstract: Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47
    Contextual Info: t v . • i1',!ï î .1l II^I[I:î ¡ e i w O A ln i“ ' ¡1 à f;] m Semiconductor, Inc. TC47 Series VOLTAGE REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION ■ ■ The TC47 Series are CMOS voltage regulator controller ICs for use with an external power transistor. They feature


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    tc4730a100maot-23-5marking code h.5 sot 23-5+8volt regulator 723 10 pinic 723 voltage regulator723 voltage regulator ictc47brntc-47tc-47tl 4946ntc47 PDF

    sot89 marking 93

    Abstract: MARKING 93 SOT89 sot89 93 marking code EF
    Contextual Info: Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49 FEATURES PINNING • Hign current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 emitter • High DC current gain (min. 20000). 2 collector 3 base APPLICATIONS


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    bcv29bcv49bcv28bcv48+4sot89 marking 93marking 93 sot89sot89 93marking code ef PDF

    GENERAL SEMICONDUCTOR MARKING RJ

    Abstract: DO-214AC marking Rj
    Contextual Info: RS1ATHRU RS1J SURFACE MOUNT FAST SWITCHING RECTIFIER Reverse Voltage 50 to 600 Volts - DO-214AC MODIFIED J-BEND Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mounted applications in order to optimize


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    do-214acmil-std-750general semiconductor marking rjdo-214ac marking rj PDF

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: us1j-e3 US1M MARKING CODE us1jhe3 MARKING CODE TL DO-214AC JESD22-B102 J-STD-002 US1J-E361T us1m vishay PREFERRED PACKAGE CODE um
    Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


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    j-std-020do-214ac2002/95/ec2002/96/ec+10general semiconductor marking uj smaus1j-e3us1m marking codeus1jhe3marking code tl do-214acjesd22-b102j-std-002us1j-e361tus1m vishaypreferred package code um PDF

    L110C

    Abstract: marking DOE US1B General marking CODE UJ General Semiconductor
    Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT _ US1ATHRU US1J_ SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere _ FEATURES_ DO-214AC ♦ Plastic package has Underwriters Laboratory


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    do-214acl110cmarking doeus1b general+1marking code uj general semiconductor PDF

    e 1220 diode

    Abstract: TC1219
    Contextual Info: W Semiconductor, Inc. TC 1219 SWITCHED CAPACITOR VOLTAGE CONVERTERS WITH SHUTDOWN IN SOT PACKAGES FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC1219/1220 are CMOS “charge-pump” voltage


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    tc1220ot-23a-6tc1219/1220tc1219+1e 1220 diode PDF

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08
    Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


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    j-std-020cdo-214ac2002/95/ec2002/96/ec+1103-jul-06general semiconductor marking uj smaus1j-e3/5atus1m datasheetus1m vishaygeneral semiconductor marking umus1j-e3/61tjesd22-b102dj-std-002bus1g vishayrectifier marking ug 08 PDF

    Contextual Info: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)


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    do-214ac50mvp-p02-jul-02 PDF

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: GENERAL SEMICONDUCTOR us1j vishay MARKING UM SMA
    Contextual Info: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)


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    do-214ac50mvp-p20-mar-03general semiconductor marking uj sma+2general semiconductor us1jvishay marking um sma PDF

    GENERAL SEMICONDUCTOR MARKING uj sma

    Abstract: GENERAL SEMICONDUCTOR MARKING UD Device Marking Code UB UD UG UJ UK UM
    Contextual Info: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t ol V d e e d n ang e t R Ex 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)


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    do-214ac50mvp-p18-feb-04general semiconductor marking uj sma+2general semiconductor marking uddevice marking code ub ud ug uj uk um PDF

    Contextual Info: central" Semiconductor Corp. C M P T2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


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    t2222acmpt2222aot-23150ma PDF

    GENERAL SEMICONDUCTOR MARKING uj sma

    Abstract: JESD22-B102D J-STD-002B
    Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


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    j-std-020cdo-214ac2002/95/ec2002/96/ec+408-apr-05general semiconductor marking uj smajesd22-b102dj-std-002b PDF

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: RECTIFIER marking UG 08 us1d US1A
    Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •


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    do-214acj-std-020cul-94v-0j-std-002b+7jesd22-b102d50mvp-p05-aug-05general semiconductor marking uj smarectifier marking ug 08us1dus1a PDF

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


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    gp15m1n40051n4005/logodo-204ac+1224-jun-04do-204algeneral semiconductor marking mj sma edkvp 62akvp 82agfm 51as4 68ageneral semiconductor marking sj sma6v8cbfm 62akvp 75agfm 16a PDF

    6 PIN TRANSISTORS 58A

    Abstract: power mosfet 600v 29a STK58X60LM
    Contextual Info: STK58X60LM Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V Min. Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.7Ω(Max.) Ordering Information Type NO.


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    stk58x60lmstk58x60ksd-t0h016-0006 pin transistors 58a+1power mosfet 600v 29a PDF

    STK0260

    Contextual Info: STK0260LM Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V Min. Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.7Ω(Max.) Ordering Information Type NO.


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    stk0260lmstk0260ksd-t0h020-000 PDF

    Contextual Info: STK38X60LM Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V Min. Low Crss : Crss=4.3pF(Typ.) Low gate charge : Qg=4.5nC(Typ.) Low RDS(on) :RDS(on)=9.4Ω(Max.) Ordering Information Type NO.


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    stk38x60lmstk38x60ksd-t0h011-000 PDF

    Contextual Info: Central" CMLT3904E NPN CMLT3906E PNP CMLT3946E NPN/PNP Semiconductor Corp. ENH ANCED SPEC IFIC A T IO N COMPLEMENTARY PICOmini SILICON TRANSISTORS ENHANCED DESCRIPTION: The Central Semiconductor CMLT3904E two sin­ gle NPN , CMLT3906E (two single PNP), and


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    cmlt3904ecmlt3906ecmlt3946eot-563 PDF

    US1A

    Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


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    j-std-0202002/95/ec2002/96/ecdo-214ac+208-apr-05us1a PDF

    capacitor Y5S 022

    Abstract: cm z5u 0.033 m 3kv ceramic disc .01 1kv z5u cera-mite z5u 1kv z5u capacitor sprague cm z5u 6kv cera-mite z5u 3kv y5s 0022 CERA-MITE Y5V 2KV 10TCCT18
    Contextual Info: f i - O S -0 5 - 0 1 A COMPANY CERAMIC DISC CAPACITORS Introduction OF SPRflGUE Cera-mite , 1.0 Picofarad to 0.1 M icrofarad CERAMIC DISC CAPACITORS Reliable solutions in EMI/RFI, decoupling, dv/dt and di/dt, snubbers, by-pass, ESR and ESL. Excellent for power supplies: Switcher and high voltage.


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    dd21bsflcapacitor y5s 022cm z5u 0.033 m 3kvceramic disc .01 1kv z5u+7cera-mite z5u 1kvz5u capacitor spraguecm z5u 6kvcera-mite z5u 3kvy5s 0022cera-mite y5v 2kv10tcct18 PDF