MARKING CODE SE TRANSISTORS Search Results

Contextual Info: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219G • Package • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820 • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1218G • Package • High forward current transfer ratio hFE

Contextual Info: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2011/65/EU directives

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD0602 • Features ■ Package • Large collector current IC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820 Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD1819G • Package • High forward current transfer ratio hFE

IC DATE CODE

Abstract: IC marking TY
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820G • Package • Large collector current IC • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

f747

Contextual Info: NPN Silicon High-Voltage Transistors • • • • BFN24 BFN26 Suitable fo r video o u tp u t stages in TV sets and sw itch in g pow er supplies High breakdow n voltage Low co lle c to r-e m itte r saturation voltage C om plem entary typ e s: BFN 25, BFN 27 PNP

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR91AAG Silicon PNP epitaxial planar type For digital circuits • Package  Optimum for high-density mounting and downsizing of the equipment  Contribute to low power consumption

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A • Package  Low collector-emitter saturation voltage VCE(sat)  Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Package • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602A • Features M Di ain sc te on na tin nc ue e/ d  Package  Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1280G • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

transistor Bc 542

Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
Contextual Info: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times

2GM H transistor

Abstract: 2GM TRANSISTOR transistor marking SA p sot-23
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 Ì3.1Ì .118 (3.0) .016 (0.4) Top View ♦ As complementary type, the NPN

transistor 6aw

Contextual Info: BC846AW-AU ~ BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • • • • • Collector current IC = 100mA Acqire quality system certificate : TS16949

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462G • Package ■ Features • Code SSMini3-F3 • Marking Symbol: Y

7aw transistor

Contextual Info: BC846AW-AU ~ BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • • • • • Collector current IC = 100mA Acqire quality system certificate : TS16949

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SA1531G • Package • Low noise voltage NV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification/oscillation/mixing • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment