2SD2216J Search Results

Contextual Info: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 0.375 2 0 to 0.02 (0.50)(0.50) (0.80) 1 0.27±0.02 5˚ 0.70+0.05 –0.03 • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02

2SB1462J

Abstract: 2SD2216J
Contextual Info: Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 VCBO –60 V VCEO –50 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Package • High forward current transfer ratio hFE

2SB1462J

Abstract: 2SD2216J
Contextual Info: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .

IC4800

Abstract: 2SB1462J 2SD2216J
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Features ue pl d in an c se ed lud pl vi an m m es

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: Transistor 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit: mm For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 5˚ Symbol Rating Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 0.12+0.03 –0.01 (0.375) 1.60±0.05 5˚ 2 • High forward current transfer ratio hFE

2SB1462J

Abstract: 2SD2216J
Contextual Info: Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216J 1.60+0.05 –0.03 1.00±0.05 • Features 1 Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 0.12+0.03 –0.01 (0.375) 1.60±0.05 5˚ 2 • High forward current transfer ratio hFE

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 1 • High forward current transfer ratio hFE

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UP04598G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04598G Silicon NPN epitaxial planar type For high frequency amplification (Tr1) For low frequency amplification (Tr2) • Features  Package  Two elements incorporated into one package (Each transistor is separated)

lcd control board schematic

Abstract: R8025 IC8001 c8015 C8014 C8013 R8025 ac AN2540FHQ-V schematic diagram ac voltage regulator schematic diagram ac regulator
Contextual Info: NOTE: FOR SCHEMATIC DIAGRAM AND CIRCUIT BOARD LAYOUT NOTES, REFER TO BEGINNING OF SCHEMATIC SECTION. NOTE: PARTS MARKED "PT" ARE NOT USED. NOTE: For placing a purchase order of the parts, be sure to use the part number listed in the parts list. Do not use the part number on this diagram.

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

C3507 transistor

Abstract: C3507 C3502 C3518 c3506 C4804 Q1009 transistor C3552 IC1002 c3552
Contextual Info: PV-GS2P / PV-GS9P / PV-GS12P / PV-GS14P / PV-GS15P / PV-GS9PC / PV-GS13PC / PV-GS15PC NOTE: For placing a purchase order of the parts, be sure to use the part number listed in the parts list. Do not use the part number on this diagram. MAIN IX SCHEMATIC DIAGRAM

2SA1586Y

Abstract: tX-2 27MHz MA159A-TX 2.2-20V matrix CCD 2SA1586YG conditioning circuits for window TV on/off sensor MB88347 si 1125 hd video signal circuit diagram tv sony
Contextual Info: MCX18N00A/MCX18N00B Micro Unit CCD Description The micro unit CCD is a CCD color camera unit with built-in CCD image sensor, drive system IC, sample-and-hold IC, signal processor IC and lens system. 64 pin QFN Ceramic Features • Ultra-compact size: MCX18N00A

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and