2SD1280G Search Results
2SD1280G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SD1280GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/ec2sd1280g | |
2SB0956G
Abstract: 2SD1280G
|
Original |
2002/95/ec2sb0956g2sd1280g | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1280G • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C |
Original |
2002/95/ec2sb0956g2sd1280g | |
|
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. |
Original |
2002/95/ec2sd1280g | |
2SD1280GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. |
Original |
2002/95/ec2sd1280g | |
|
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. |
Original |
2002/95/ec2sd1280g | |
|
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1280G • Package ■ Features • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/ec2sb0956g2sd1280g | |
2SB0956G
Abstract: 2SD1280G
|
Original |
2002/95/ec2sb0956g2sd1280g | |
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
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pamp13-n1mip2f3mip2f4mip382+7 | |
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
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Original |
respons39o-220d-a1ma26p02maz3082j+15 | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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Original |
responsibilixp08081xp08546xp0a554xp0d873+13 | |
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
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Original |
xp06501txp06531xp06545xp0a554+13 | |
mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
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pamp13-n1mip411mip2f4mip2f3+7 |