MARKING CODE RHS Search Results

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

1s211

Abstract: 2I k
Contextual Info: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

1117G

Abstract: Q62702-F1493 GMA marking IC456
Contextual Info: BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-F1503

Abstract: marking 17 sot343 ZL 58
Contextual Info: BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFR183W

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Q62702-F1594

Abstract: transistor marking RHs
Contextual Info: BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Transistor BFR 14

Abstract: Q62702-F1316 SIEMENS marking
Contextual Info: BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

sot143 Marking code RHs

Abstract: Q62702-F1382
Contextual Info: BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: V ishay I n tertech n o l o g y, I n c . Capacitors - Radial Aluminum, Miniaturized, High-CV I INNOVAT AND TEC O L OGY 142 RHS N HN VISHAY BCcomponents O 19 62-2012 142 RHS Radial Aluminum Capacitors for High-Temperature Standard Applications Key Benefits

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . 142 RHS M A L 2142.E3 KEY BENEFITS • Miniaturized, high-CV products per unit volume • Electronic circuits in industrial and SMPS products • Compliant to RoHS directive 2002/95/EC • Filtering of unwanted noise

uf41

Abstract: AT350V
Contextual Info: RHS GREEN CAP 105˚C Use, Miniature, High-Ripple, Long Life Capacitors ● ● ● MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS 105˚C 5000hours Higher ripple current. Guarantees 4000 to 5000 hours at 105℃. Best-suited to electronic ballast. High ripple, Long life

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs

sot143 Marking code RHs

Abstract: IC 1296
Contextual Info: SIEMENS BFP 183 NPN Silicon RF T ransistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1382 1=C m BFP 183 f\3 II ESP: Electrostatic discharge sensitive device, observe handling precaution!

Q62702-F1503

Contextual Info: SIEMENS BFP.183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1503 1 =E o BFP 183W N II ESP: Electrostatic discharge sensitive device, observe handling precaution!

142 RHS

Contextual Info: 142 RHS Vishay BCcomponents Aluminum Capacitors Radial High Temperature Standard FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, insulated with a blue sleeve • Pressure relief for case Ø D ≥ 6.3 mm

142 RHS

Contextual Info: 142 RHS Vishay BCcomponents Aluminum Capacitors Radial High Temperature Standard FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, insulated with a blue sleeve • Pressure relief for case Ø D ≥ 6.3 mm

Contextual Info: 6367251 MO T O R O L A SC MEMORY / AS I C j y T Q .R 0 L A S C iriE H O R Y /A S IC > * WlBmiïSÊBmâËSSÈItSfiB$$KE&RHsK!eBmiBmmam 65638 bM TZtt6 ~ 1 3 -/5 ' ° D E li7 3 b 7 2 S l M C M 0DbSâ3fl _) h 6 8 3 6 9 Advance Inform ation NMOS (N-CHANNEL, SILICON GATE)

52228E3

Abstract: 51086 52229E3 142 RHS
Contextual Info: 142 RHS Vishay BCcomponents Aluminum Capacitors Radial High Temperature Standard FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, insulated with a blue sleeve • Pressure relief for case Ø D ≥ 6.3 mm