MARKING CODE RFS Search Results

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

BF989

Abstract: 62702-F969
Contextual Info: Silicon N Channel MOSFET Tetrode • • BF 989 For am plifier and m ixer stages in UHF and VHF TV tuners Low input and o u tp u t capacitance Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF989 MA Q62702-F874

MJE 340 transistor

Abstract: Q62702-F1501
Contextual Info: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-F1491

Abstract: GMA marking 175fF
Contextual Info: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-F1271

Contextual Info: BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Q62702-F1314

Contextual Info: BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFP 181R

Abstract: IC 7449 Q62702-F1685 SIEMENS marking
Contextual Info: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Transistor BFR 181w

Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

R820t

Contextual Info: H rfs e J a hre JAHR E-Induktivitaten werden in verschiedenen Bauformen mit axialen und radialen Anschlussen in festen und abstimmbaren Werten hergestellt. Die einlagigen Oder mehrlagigen W icklungen werden auf Isolierstoff-, Eisenpulver- Oder i-errit-Kernen gewickelt. Die

Contextual Info: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

DB-1MS

Contextual Info: SIEMENS BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz Q62702-F1271 1=C It RFs m B F P 181 PO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: RFS MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS FOR AUDIO ELNA developed new raw material for the separate paper which use a silk fibers. Therefore, this capacitor can give you high grade sound for your audio design.

MAT-21-1038

Abstract: RFSA2614SR UMK105BJ102KV C18-C20
Contextual Info: RFSA2614 RFSA2614Parallel Controlled Digital Step Attenuator 504000 MHz, 6Bit, 0.5 dB LSB PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50-4000MHz, 6-BIT, 0.5dB LSB Features  Frequency Range 50MHz to 4000MHz C1 C2 C4 C8 C16 C0.5 Package: QFN, 24-Pin, 4mmx4mm

MAT-21-1038

Abstract: MPSS100-9-C
Contextual Info: RFSA2614Parallel Controlled Digital Step Attenuator 504000 MHz, 6Bit, 0.5 dB LSB RFSA2614 Preliminary PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50-4000MHz, 6-BIT, 0.5dB LSB Features   Frequency Range 50MHz to 4000MHz 6-Bits, 31.5dB Range, 0.5dB Step

WiMAX RF CMOS Transceiver

Abstract: SA2614 C18-C20
Contextual Info: RFSA2614 RFSA2614Parallel Controlled Digital Step Attenuator 50MHz to 4000MHz, 6Bit, 0.5dB LSB PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50MHz TO 4000MHz, 6-BIT, 0.5dB N/C 1 Vcc 2 N/C 3 6 Bits, 31.5dB Range, 0.5dB Step RF1 4  High Linearity, IIP3 >49dBm

rfsa2614

Abstract: C18-C20 trace code decoder RFMD
Contextual Info: RFSA2614 RFSA2614Parallel Controlled Digital Step Attenuator 504000MHz, 6Bit, 0.5dB LSB PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50-4000MHz, 6-BIT, 0.5dB LSB  3V and 5V Logic Compatible  On-chip Parallel Decoder  Parallel Programming Interface

Contextual Info: RFSA2614 RFSA2614Parallel Controlled Digital Step Attenuator 50MHz to 4000MHz, 6Bit, 0.5dB LSB PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50MHz TO 4000MHz, 6-BIT, 0.5dB N/C 1 Vcc 2 N/C 3 6 Bits, 31.5dB Range, 0.5dB Step RF1 4  High Linearity, IIP3 >49dBm