MARKING CODE MJ Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 8 CE 3 D1 7 Part # Code G2 D2 6 Lot Traceability and Date Code

Contextual Info: SDB310WAU Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. Marking SDB310WAU Package Code MJ SOT-323 Outline Dimensions unit : mm 1.95~2.25 1.15~1.35

Contextual Info: SDB310WAUF Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. SDB310WAUF Marking Package Code MJ SOT-323F Outline Dimensions unit : mm 1.95~2.25 0.40 Max.

st morocco tip122

Abstract: Darlington pair IC schematic morocco tip122 MJD122 MJD122-1 MJD122T4 MJD127 MJD127-1 MJD127T4 TIP122
Contextual Info: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube

chn 935

Abstract: ST CHN t4 CHN 640 STMicroelectronics DPAK Marking CODE diode chn 940 morocco tip122 chn 940 935 CHN MJD127 CHN T4
Contextual Info: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube

Contextual Info: 8 7 6 5 3 4 1 2 REVISIONS 5.50 [.217] DEEP THREADED HOLES SEE ORDERING CODE THREAD OPTION F 38.95 1.534 REF 8.90 .350 REV DESCRIPTION DATE APPRD C PROPOSAL DRAWING EAR 13377 OCT01/09 K.L. 2.50 .098 DATE CODE INK MARKING 9.00 .354 18.00 .709 16 PIN VERTICAL

STK730FC

Abstract: KST-H014-000 STK730 AUK auk stk730
Contextual Info: . STK730FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. Marking Package Code STK730FC STK730

f 0472 N-Channel MOSFET

Abstract: si5980
Contextual Info: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1

Contextual Info: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1

bft93

Abstract: transistor BF 199
Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

RF NPN POWER TRANSISTOR 2.5 GHZ

Abstract: Q62702-F1575 marking 17 sot343
Contextual Info: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

STK630

Contextual Info: STK630FC Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. Marking Package Code STK630FC STK630

Contextual Info: STK830FC Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=500V. • Low RDS(ON) : 1.17Ω(Typ.) Ordering Information Type NO. Marking Package Code STK830FC STK830

Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 VDS (V) 40 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Part # Code S 6

Transistor BFT 93

Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
Contextual Info: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

STMicroelectronics DPAK Marking CODE

Abstract: BULD1101E BULD1101ET4
Contextual Info: BULD1101ET4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULD1101ET4 BULD1101E Tape & Reel HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR

auk stk0765

Abstract: STK0765 STK0765F Advanced Power MOSFET KST-H038-000
Contextual Info: STK0765F Semiconductor Advanced Power MOSFET Features • Low Crss • Low gate charge. • HIGH BVDSS • Low leakage current Ordering Information Type NO. STK0765F Marking STK0765 Outline Dimensions Package Code TO-220F unit : mm PIN Connections 1. Gate

Transistor BFT 92W

Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
Contextual Info: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

30227

Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
Contextual Info: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration