MARKING CODE MICROWAVE Search Results

lmsp54c

Abstract: LMTP33AA-148 "RF diode" SP AA097 SWITCHPLEXER LMSP43AA-191 murata microwave modules LMSP54AA-097 AA191 LMSP54CA-141
Contextual Info: Microwave Modules RF Diode Switches RF Diode Switches 0.7±0.2 1.8±0.2 2.2±0.1 0.4±0.2 4.9±0.3 Pin 1 Marking 8 Manufacturer's Name Code (4) 0.1±0.1 3.2±0.2 (1) (2) (3) (7) (6) (5) 0.4±0.2 (1) : Rx (2)(4)(8) : GND (3) : Tx (5) : Vc1 (6) : ANT (7) : Vc2

Contextual Info: RF/Microwave C0G NP0 Capacitors (RoHS) Ultra Low ESR, “U” Series, C0G (NP0) Chip Capacitors GENERAL INFORMATION are met on each value producing lot to lot uniformity. Sizes available are EIA chip sizes 0402, 0603, 0805, and 1210. “U” Series capacitors are C0G (NP0) chip capacitors specially designed for “Ultra” low ESR for applications in the

1pF 50V Chip Capacitor, size 0603

Abstract: LD02 MIL-C-55681
Contextual Info: RF/Microwave C0G NP0 Capacitors (RoHS) Ultra Low ESR, “U” Series, C0G (NP0) Chip Capacitors GENERAL INFORMATION are met on each value producing lot to lot uniformity. Sizes available are EIA chip sizes 0603, 0805, and 1210. “U” Series capacitors are C0G (NP0) chip capacitors specially designed for “Ultra” low ESR for applications in the

HSMS-38

Abstract: SOT23 Marking Code AB AN1124 381B HSMP3810 HSMP4810 diode marking code RJ MARKING E4 "Pin Diode" HSMP-381x Series HSMP-481X
Contextual Info: Surface Mount RF PIN Low Distortion Attenuator Diodes Technical Data HSMP-381x Series and HSMP-481x Series Features • Diodes Optimized for: – Low Distortion Attenuating – Microwave Frequency Operation • Surface Mount Packages – Single and Dual Versions

Contextual Info: Wha% HEW LETT* WlltM PA CKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and

AN1124

Abstract: HSMS-286x Series METAL DETECTOR circuit for make HSMS-286x IC RFID 2.45 GHz mark code t4 diode SCHOTTKY DIODE SOT-143 Microwave detector diodes chip diode 047 diode SMA marking code PB
Contextual Info: Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-286x Series Features • Surface Mount SOT-23/ SOT-143 Packages SOT-23/SOT-143 Package Lead Code Identification top view • Miniature SOT-323 and SOT-363 Packages SINGLE 3 SERIES 3 • High Detection Sensitivity:

LD02

Contextual Info: RF/Microwave C0G NP0 Capacitors (Sn/Pb) Ultra Low ESR, “U” Series, C0G (NP0) Chip Capacitors GENERAL INFORMATION are met on each value producing lot to lot uniformity. Sizes available are EIA chip sizes 0603, 0805, and 1210. “U” Series capacitors are C0G (NP0) chip capacitors specially

sot 23 tr2

Abstract: 2RX MARKING HSMS8202 sot23 marking tr1 HSMS-8207 HSMS-8209 HSMS-280X HSMS-8101 HSMS-8202 MARKING SOT23 tr2
Contextual Info: Surface Mount Microwave Schottky Mixer Diodes Technical Data Features HSMS-8101 Single HSMS-8202 Series Pair HSMS-8207 Ring Quad HSMS-8209 Crossover Quad Plastic SOT-23 Package • Optimized for use at 10-14 GHz • Low Capacitance Package Lead Code Identification

1210 case

Abstract: EIA 0603 low cap esr measure MIL-C-55681
Contextual Info: RF/Microwave C0G NP0 Capacitors Ultra Low ESR, “U” Series, C0G (NP0) Chip Capacitors GENERAL INFORMATION are met on each value producing lot to lot uniformity. Sizes available are EIA chip sizes 0603, 0805, and 1210. “U” Series capacitors are C0G (NP0) chip capacitors specially designed for “Ultra” low ESR for applications in the

HSMS-2850

Abstract: diode Marking code t5 HSMS-286* reliability HSMS-2820 HSMS-2860 equivalent HSMS-2860 HSMS2850 HSMS-285X HSMS-286X diode marking code RJ
Contextual Info: Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/µW at 915 MHz up to 35 mV/µW at 2.45 GHz up to 25 mV/µW at 5.80 GHz

hsmp-3800

Abstract: marking 550 SOT143
Contextual Info: warn HEWLETT mHEM PA CK A R D Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and

marking I2 SOT23-5

Contextual Info: Thaï mLUMHP AECWKLAERTDT Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/|iW at 915 MHz up to 35 mV/jiW at 2.45 GHz

CDR03 receiver

Abstract: varistor 250v 592 PH 105k 250v ceramic disc Piezoelectric crystal 1mhz ultrasonic FUSE T2A 250v Motorola transistor smd marking codes smps 10w 5V 230 AC to 5V dc smps capacitor type 104z 50v SR 0805 X7R capacitor
Contextual Info: MLC Capacitors Tantalum Capacitors Microwave Capacitors Thin Film Capacitors Glass Capacitors Chip Resistors Networks EMI Filters Bulk Filters Saw Filters Dielectric Filters Resonators Oscillators Thin Film Inductors Thin Film Fuses Voltage Suppressors Acoustical Piezos

HSMS-8205

Abstract: MARKING- L31 SOT-23 marking l31 SOT 143 MARKING 2T marking 2r Schottky L30 SOT143
Contextual Info: What HEWLETT* mLliM PA C K A R D Surface Mount Microwave Schottky Mixer Diodes Technical Data Features h s m s -s i o i sin gle HSMS-8202 Pair HSMS-8205 Pair HSMS-8207 Quad Plastic SOT-23 Package • Optimized for use at 10-14 GHz • Low Capacitance • Low Conversion Loss

Siemens Microwave

Abstract: marking code jf1
Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAS 40 Features • • • • • • • HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Hermetically sealed microwave package

microwave transistor siemens

Abstract: BAS40 BAS40-T1 Q62702A1176 marking code ir1 Microwave Semiconductors
Contextual Info: HiRel Silicon Schottky Diode BAS 40 Features ¥ ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Hermetically sealed microwave package

on semiconductor marking code A04

Abstract: marking A04 C BFY182
Contextual Info: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz

1000V

Contextual Info: MULTI-LAYER HIGH-Q CAPACITORS These lines of multilayer capacitors have been developed for High-Q and microwave applications. • The S-Series R03S, R07S, R14S, R15S capacitors give an ultra-high Q performance, and exhibit NP0 temperature characteristics.

A03 transistor

Abstract: microwave transducer BFY196 BFY 36 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz

marking A04

Abstract: BFY181 p 181 V Q62702F1715
Contextual Info: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz

PPC5001T

Abstract: PQC5001T
Contextual Info: 7 - 3 3 'Q 5 PPC5001T PQC5001T P H ILIP S in t e r n a t io n a l •SbE D ■ 711002b D04bl+2E ISO IPHIN MICROWAVE POWER TRANSISTORS NPN silicon p ow er tra n sisto r fo r use in a co m m o n -co lle cto r o s c illa to r c ircu its in m ilita ry and professional applications.

Contextual Info: MULTI-LAYER HIGH-Q CAPACITORS These lines of multilayer capacitors have been developed for High-Q and microwave applications. • The S-Series R03S, R07S, R14S, R15S capacitors give an ultra-high Q performance, and exhibit NP0 temperature characteristics.

Contextual Info: MULTI-LAYER HIGH-Q CAPACITORS These lines of multilayer capacitors have been developed for High-Q and microwave applications. • The S-Series R03S, R07S, R14S, R15S capacitors give an ultra-high Q performance, and exhibit NP0 temperature characteristics.

Contextual Info: MULTI-LAYER HIGH-Q CAPACITORS T These lines of multilayer capacitors have been developed for High-Q and microwave applications. H • The S-Series R03S, R07S, R14S, R15S capacitors give an ultra-high Q performance, and exhibit NP0 temperature charu acteristics.