MARKING CODE C25 Search Results

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

C2596

Abstract: Q62702-C2596 SCT-595
Contextual Info: BCP 70M PNP Silicon AF Power Transistor Preliminary data 4 • For AF driver and output stages • High collector current 5 • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BCP 70M PBs Q62702-C2596 Package

c2506

Abstract: SWITCHING DIODE 600V 2A fast recovery diode 600v 12A
Contextual Info: ERC25 1.2A ( 400 to 600V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability 02 C25- 0 6 •·· Abridged type name Voltage class Applications Lot No.

C2506

Contextual Info: ERC25 1.2A ( 400 to 600V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability 02 C25- 0 6 •·· Abridged type name Voltage class Applications Lot No.

C2506

Abstract: ERC25
Contextual Info: ERC25 1.2A ( 400 to 600V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability 02 C25- 0 6 •·· Abridged type name Voltage class Applications Lot No.

fast recovery diode 600v 12A

Abstract: C2506 ERC25 C25-06 600v 12A 12A MARKING CODE
Contextual Info: ERC25 1.2A ( 400 to 600V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability 02 C25- 0 6 •·· Abridged type name Voltage class Applications Lot No.

c3355

Abstract: c2570 transistor C2570 transistor c3355 C3355 schematic NE02132 C3544 C-2570 NE85632 marking 14
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 32 YEAR INDICATOR f 5.2 MAX MONTH INDICATOR 5.5 MAX MARKING INTERNAL CODE 14.0 MIN f 0.5 2.54 1.27 1.77 MAX B E C PART NUMBER NE02132

Q62702-B580

Contextual Info: BB 535 Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance Type Marking Ordering Code Pin Configuration Package BB 535 white S 1=C SOD-323 Q62702-B580 2=A Maximum Ratings Parameter Symbol Values

TSA1001

Abstract: TSA1002 TSA1201 TQFP48 TSA0801 TSA0801CF TSA0801CFT TSA0801IF TSA0801IFT
Contextual Info: TSA0801 8-BIT, 40MSPS, 40mW A/D CONVERTER • 8-bit A/D converter in deep submicron CMOS ■ ■ ■ ■ ■ ■ ■ ■ ORDER CODE Temperature Range Part Number Conditioning Marking TSA0801CF 0°C to +70°C TQFP48 Tray SA0801C TSA0801CFT 0°C to +70°C TQFP48

Contextual Info: TSA0801 8-BIT, 40MSPS, 40mW A/D CONVERTER • 8-bit A/D converter in deep submicron CMOS ■ ■ ■ ■ ■ ■ ■ ■ ORDER CODE Temperature Range Part Number Conditioning Marking TSA080 1CF 0°C to +70°C TQFP48 Tray SA0801C 0°C to +70°C TQFP48 Tape & Reel

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

marking code INFINEON

Abstract: A2003 marking code of 0 to Z BB867-02V
Contextual Info: BB867. Silicon Tuning Diode
For SAT - Indor units
High capacitance ratio C1V /C25V typ.15.8
Low series inductance
Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration

BAR63-02V

Abstract: BB867 BB867-02V SC75 SC79 SCD80 CT Series
Contextual Info: BB867. Silicon Tuning Diode • For SAT tuners • High capacitance ratio C1V/C25V typ.15.8 • Low series inductance • Excellent uniformity and matching due to "in-line" matching assembly procedure • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

INFINEON date code marking

Contextual Info: BB867. Silicon Tuning Diode • For SAT tuners • High capacitance ratio C1V/C25V typ.15.8 • Low series inductance • Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V  Type BB867-02V Package SC79 Configuration

Contextual Info: IXA4IF1200UC preliminary XPT IGBT VCES = 1200 V I C25 = 9A VCE sat = 1.8 V Copack Part number IXA4IF1200UC Marking on Product: X4TAUF 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-252 (DPak) ● Easy paralleling due to the positive temperature

Contextual Info: 2.5V ~ 3.3V SM TCXO CMOS GTXO-C25 Specifications GTXO-C25J: 2.5V supply GTXO-C25K: 2.8V supply GTXO-C25L: 3.3V supply Variant Parameters K L 4.0 ~ 54.0MHz    Calibration tolerance: ±0.5ppm @ +25°C ±2°C    ±3.0ppm ±2.5ppm

Contextual Info: 2.5V ~ 3.3V SM TCXO CMOS GTXO-C25 Specifications GTXO-C25J: 2.5V supply GTXO-C25K: 2.8V supply GTXO-C25L: 3.3V supply Variant Parameters K L 4.0 ~ 54.0MHz    Calibration tolerance: ±0.5ppm @ +25°C ±2°C    ±3.0ppm ±2.5ppm

Contextual Info: 2.5V ~ 3.3V SM TCXO CMOS GTXO-C25 Specifications GTXO-C25J: 2.5V supply GTXO-C25K: 2.8V supply GTXO-C25L: 3.3V supply Variant Parameters K L 4.0 ~ 54.0MHz    Calibration tolerance: ±0.5ppm @ +25°C ±2°C    ±3.0ppm ±2.5ppm   

Contextual Info: 2.5V ~ 3.3V SM TCXO CMOS GTXO-C25 Specifications GTXO-C25J: 2.5V supply GTXO-C25K: 2.8V supply GTXO-C25L: 3.3V supply Variant Parameters K L 4.0 ~ 54.0MHz    Calibration tolerance: ±0.5ppm @ +25°C ±2°C    ±3.0ppm ±2.5ppm

GTXO DATE CODE

Abstract: GTXO-C25L
Contextual Info: 1.8V ~ 3.3V SM TCXO CMOS GTXO-C25 Specifications GTXO-C25G: 1.8V supply GTXO-C25J: 2.5V supply GTXO-C25L: 3.3V supply Variant Parameters 2.50 ±0.10 2.00 ±0.10 J L Frequency range: 0.675 ~ 55.0MHz ࡯ ࡯ ࡯ Calibration tolerance: ±0.5ppm @ +25°C ±2°C

Contextual Info: IXA4IF1200UC preliminary XPT IGBT VCES = 1200 V I C25 = 9A VCE sat = 1.8 V Copack Part number IXA4IF1200UC Marking on Product: X4TAUF Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-252 (DPak) ● Easy paralleling due to the positive temperature

solar inverter circuit

Abstract: IXA33IF1200HB
Contextual Info: IXA33IF1200HB advanced I C25 = = VCES VCE sat typ = XPT IGBT Copack 51 A 1200 V 1.8 V C (2) Part number IXA33IF1200HB (G) 1 E (3) Features / Advantages: Applications: Package: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage

Contextual Info: IXA4I1200UC preliminary XPT IGBT VCES = 1200 V I C25 = 9A VCE sat = 1.8 V Single IGBT Part number IXA4I1200UC Marking on Product: X4TAU Backside: collector (C) 2+4 (G) 1 (E) 3 Features / Advantages: Applications: Package: TO-252 (DPak) ● Easy paralleling due to the positive temperature

IXA27IF1200HJ

Abstract: solar inverter circuit ISOPLUS247 inverter 94V-0 C4
Contextual Info: IXA27IF1200HJ advanced I C25 = = VCES VCE sat typ = XPT IGBT Copack 43 A 1200 V 1.8 V C (2) Part number IXA27IF1200HJ (G) 1 E (3) Features / Advantages: Applications: Package: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage