268AA Search Results

Contextual Info: IXA12IF1200TC preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE sat = 1.8 V Copack Part number IXA12IF1200TC 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-268AA (D3Pak) ● Easy paralleling due to the positive temperature coefficient of the on-state voltage

CLA50E1200TC

Contextual Info: CLA50E1200TC High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200TC Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-268AA D3Pak ● Thyristor for line frequency ● Planar passivated chip

Contextual Info: DSP25-16AT Standard Rectifier VRRM = 2x 1600 V I FAV = 25 A VF = 1.16 V Phase leg Part number DSP25-16AT Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-268AA D3Pak ● Planar passivated chips ● Very low leakage current

diode u2 40

Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
Contextual Info: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ *q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style * ► N eiV ISOPLUS247™ (R) Case style

IXA12IF1200TC

Contextual Info: IXA12IF1200TC preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE sat = 1.8 V Copack Part number IXA12IF1200TC Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-268AA (D3Pak) ● Easy paralleling due to the positive temperature

Contextual Info: IXA4IF1200TC preliminary XPT IGBT VCES = 1200 V I C25 = 9A VCE sat = 1.8 V Copack Part number IXA4IF1200TC Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-268AA (D3Pak) ● Easy paralleling due to the positive temperature

Contextual Info: Power Packages TO-268AA SURFACE MOUNT JEDEC TO-268AA PLASTIC PACKAGE H1 INCHES A E A1 TERM. 4 D L2 L1 L 3 1 b1 J1 L3 0.531 13.5 b2 1 0.197 (5.0) 0.118 (3.0) 0.156 (3.96) MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS 46 MIN MAX NOTES A 0.193

D3PAK

Abstract: EQUIVALENT OF CLA50E1200HB IXYS M2000-200 thyristor CLA50E1200HB
Contextual Info: CLA50E1200TC High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200TC Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-268AA D3Pak ● Thyristor for line frequency ● Planar passivated chip

Contextual Info: TO-268AA SURFACE MOUNT JEDEC TO-268AA PLASTIC PACKAGE H1 INCHES A E A1 TERM. 4 D L2 L1 L 3 1 b1 J1 0.653 16.6 TERM. 4 MIN MAX MIN MAX L3 0.531 (13.5) b2 NOTES A 0.19 0.200 4.90 5.10 - A1 0.05 0.063 1.45 1.60 4, 5 b 0.04 0.057 1.15 1.45 4, 5 b1 0.07 0.082

Contextual Info: IXA4IF1200TC preliminary XPT IGBT VCES = 1200 V I C25 = 9A VCE sat = 1.8 V Copack Part number IXA4IF1200TC 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-268AA (D3Pak) ● Easy paralleling due to the positive temperature coefficient of the on-state voltage

case style

Abstract: IXSH35N100A
Contextual Info: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES

EQUIVALENT OF CLA50E1200HB

Abstract: CLA50E1200HB
Contextual Info: CLA50E1200TC High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200TC Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-268AA D3Pak ● Thyristor for line frequency ● Planar passivated chip

d3pak

Abstract: dsp25-16
Contextual Info: DSP25-12AT Standard Rectifier VRRM = 2x 1200 V I FAV = 25 A VF = 1.16 V Phase leg Part number DSP25-12AT Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-268AA D3Pak ● Planar passivated chips ● Very low leakage current

Contextual Info: DSP45-12AZ Standard Rectifier VRRM = 2x 1200 V I FAV = 45 A VF = 1.23 V Phase leg Part number DSP45-12AZ Backside: anode/cathode 1 4 3 Features / Advantages: Applications: Package: TO-268AA D3Pak-HV ● Planar passivated chips ● Very low leakage current

Ixgr50n60

Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
Contextual Info: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)

mj 1504 transistor

Abstract: mj 1504 scheme transistor mj 1504 Transistor motorola 418 of mj 1504 transistor MGV12N120D IGBT 0623
Contextual Info: MOTOROLA Order this document by MGV12N120D/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90°C 20 A @ 25°C

mj 1504 transistor

Abstract: mj 1504 scheme transistor mj 1504 of mj 1504 transistor MGV12N120D IGBT 0623 transistor k 208 Transistor motorola 418 IGBT g 0623 transistor motorola 322
Contextual Info: MOTOROLA Order this document by MGV12N120D/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90°C 20 A @ 25°C