MARKING CODE 7G Search Results

Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611

Contextual Info: SIEMENS BCR 116W NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kfl, R2=47kfi _ 0_ LT t r Marking Ordering Code Pin Configuration BCR 116W WGs UPON INQUIRY 1= B Package LU

Contextual Info: SIEMENS BCR 158W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=2.2ki2, R2=47kfl Ordering Code Pin Configuration WIs UPON INQUIRY 1= B Package 2= E o tl Marking BCR 158W CO Type

marking code 533

Abstract: bcr533
Contextual Info: SIEMENS BCR 533 NPN Silicon Digital Transistor «Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R2=10ki2 XCs Pin Configuration 1 =B Q62702-C2382 Package O il CO Marking Ordering Code BCR 533 Ui II eg

marking code 7G sot-143

Contextual Info: SIEMENS BF 997 Silicon N Channel MOSFET Tetrode • Integrated suppression network against spurious VHF oscillations • For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners Type Marking Ordering Code tape and reel BF 997

BCR 150 V- 12

Contextual Info: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface Circuit, driver circuit • Built in bias resistor R1=47kS2, R2=22kiì Ordering Code BCR 146W UPON INQUIRY Pin Configuration Package ro u m Marking WLs CÛ II Type

TRANSISTOR S2d

Abstract: NPN S2D
Contextual Info: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN T“* II Q62702-A1244 LU s2D CO SMBTA 92M o Pin Configuration II CM Ordering Code II Marking

transistor 7g

Abstract: Q62702-C2263
Contextual Info: SIEMENS BCR 185 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=10k£î, R2=47kiî Type Marking Ordering Code BCR 185 WNs Pin Configuration Q62702-C2263 1=B Package 2=E 3=C SOT-23

Contextual Info: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A

M7A transistor

Abstract: transistor M7A Q62702-C2340
Contextual Info: SIEMENS BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1 = 4 .7 kii Type Marking Ordering Code Pin Configuration BCR 169 WSs Q62702-C2340 1=B Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kfl JZL LÜ XLs UPON INQUIRY 1 =B Package o BCR 569 Pin Configuration II CO Marking Ordering Code liJ HI II

Contextual Info: SIEMENS BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22kfl, R2=22 kQ Pin Configuration BCR 141 WDs 1= B II co Q62702-C2258 Package O Marking Ordering Code LU II evi

TRANSISTOR b 772 p

Contextual Info: SIEMENS BCR 503 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drive circuit » Built in bias resistor R1=2.2kiî, R2=2.2k£î XAs Q62702-C2370 1= B Package II CO BCR 503 Pin Configuration O Marking Ordering Code LU II CM

Contextual Info: S IE M E N S BF 775W NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! 1= B Package CO O 1! Pin Configuration Q62702-F1520 LU Marking Ordering Code LOs II

Contextual Info: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP it UJ CO il Q62702-A3473 O s1G CM SMBTA 06M II Marking Ordering Code Pin Configuration CÛ Type Package

Contextual Info: SIEMENS BCR 505 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kü, R2=10kQ Marking Ordering Code Pin Configuration BCR 505 XWs Q62702-C2354 1= B Package LU It C\J Type 3=C

Contextual Info: SIEMENS BCR 183 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in resistor Rj = 10k£2, R2 = 10kQ Type Marking Ordering Code BCR 183 WMs Pin Configuration Q62702-C2262 1=B Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: SIEMENS Silicon N Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel PinCtonfigu ation 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter

Contextual Info: SIEMENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kiJ, R 2=47k£2 R n r ur Type Marking Ordering Code Pin Configuration B C R 166W W Ts 1=B UPON INQUIRY Package 2=E

Contextual Info: SIEMENS BCR 142 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, diver circuit >Built in bias resistor R i= 22kiî, R 2=47ki! TT n r Pin Configuration B C R 142 W Zs 1 =B II CO Q62702-C2259 Package o Marking Ordering Code

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

Contextual Info: S IE M E N S BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2 G H z at collector currents from 0.5mA to 20mA E S P: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BCR 573 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R 1=1kü,R 2=10k£2 Type Marking Ordering Code Pin Configuration BCR 573 XHs C62702-C2488 1=B Package 2=E 3=C SOT-23 Maximum Ratings

d 998 transistor circuit

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998