MARKING CODE 43A Search Results
MARKING CODE 43A Equivalents
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MARKING CODE 43A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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MARKING CODE 43A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
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gp15m0621xsb340do-204ac/+15 | |
PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
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by558od115by578by584+13 | |
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
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gp15m1n40051n4005/logodo-204ac+12 | |
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Contextual Info: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF |
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43B diode
Abstract: DIODE S 43a marking code 43b marking 43b diode 43b marking 43C marking JC diode 43B MARKING marking 43a marking code 43a
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q62702-x116q62702-x104q62702-x10543b diode+9 | |
5.0smdjContextual Info: 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 20 TO 170 Volts 5000Watts Peak Pulse Power 5.0SMDJ DEVICE MARKING CODE PART NUMBER Uni-polar Bi-polar REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE CLAMPING PULSE LEAKAGE |
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5000watts10/1000s5.0smdj | |
smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
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1n4148w1n4148wx1n4148x1n4448w+16 | |
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Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA) |
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5bge
Abstract: 5bgm 33cA 5BFz
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5000watts50mvp-p5bge5bgm+2 | |
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Contextual Info: 5.0SMDJ 5000W Series 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 11 TO 170 Volts 5000Watts Peak Pulse Power " * " 标注为常用型号 " * " Stand for commonly used models 5.0SMDJ DEVICE MARKING CODE PART NUMBER Uni-polar Bi-polar |
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5000watts | |
5.0smdj
Abstract: 5pfm 5PFE
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5000watts50mvp-p5.0smdj5pfm+1 | |
BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
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OCR Scan |
2004c2004s2004dz5250b+11 | |
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Contextual Info: DMN3010LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Green Product Summary V BR DSS RDS(ON) 30V 9.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V Features ID TC = +25°C 43A 39A density end products This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
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dmn3010lk3aec-q101ds36762 | |
95512
Abstract: 035H IRFPE30 MARKING 22A
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irfp3415pbfo-247o-247acirfpe30+3 | |
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9467AGHContextual Info: AP9467AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D 40V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G Halogen Free & RoHS Compliant Product 11.5m 43A S Description |
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ap9467agh-hfo-2529467agh | |
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Contextual Info: PD - 95512 IRFP3415PbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.042Ω G ID = 43A S Description Fifth Generation HEXFET® Power MOSFETs from |
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irfp3415pbfo-247o-247acirfpe30 | |
IRF34
Abstract: IRF3415 mosfet irf3415
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irf3415o-220o-220abirf34+1 | |
IRF3415
Abstract: K 9008
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91477eirf3415o-220poirf3415+2 | |
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Contextual Info: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier |
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91477eirf3415o-220o-220ab | |
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Contextual Info: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier |
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91477eirf3415o-220o-220ab | |
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Contextual Info: PD - 95512 IRFP3415PbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.042Ω G ID = 43A S Description Fifth Generation HEXFET® Power MOSFETs from |
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irfp3415pbfo-247o-247acirfpe30 | |
035H
Abstract: IRFPE30
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irfp3415pbfo-247o-247acirfpe30+1 | |
f1010
Abstract: IRF3415PBF
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irf3415pbfo-220o-220abf1010 | |
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Contextual Info: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier |
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irf3415pbfo-220o-220ab | |