MARKING CODE 327 SOT23 Search Results

marking code 327 sot23

Abstract: 326 SOT
Contextual Info: Central' CMPD2005S Semiconductor Corp. SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a

Js MARKING CODE SOT23

Abstract: sot23 marking JS v
Contextual Info: Central CMPP6027 CMPP6028 Sem iconductor Corp. SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILI­ CON TRANSISTOR DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a sur­ face mount SOT-23 package, designed for

2FP TRANSISTOR

Abstract: 2gp Transistor BCB50C BC850 BCB50 marking 2Fp BC849C BC849 bc849b bc850c, sot23
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.

TRANSISTOR SMD MARKING CODE A45

Contextual Info: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount Pb-Free Package is available. LMSD601–RLT1G LMSD601–SLT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMSD601-RLT1G YR 3000/Tape&Reel LMSD601-RLT3G YR

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 V Collector–Base Voltage

SOD223

Abstract: SOD-223
Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching diodes LM1MA151WAT1G LM1MA152WAT1G These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low

Contextual Info: D5V0L4B5V ADVANCE INFORMATION 4 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-directional ESD Protection

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G z Pb-Free Package is Available. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel L2SA1037AKXLT1G SOT23 10000/Tape & Reel 2 SOT– 23

Contextual Info: Leshan Radio Co.Ltd General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16WT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-16WT1G 5A Pb-Free SOT-323 3000/Tape&Reel LBC807-25WT1G 5B (Pb-Free)

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

PMBT4401

Contextual Info: • bbS3T31 OOaSAbT 327 H A P X N AMER PHILIPS/DISCRETE PMBT4401 b7E ]> SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT-23 envelope. It is intended for use in linear, switching, and general purpose applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: D5V0L4B5V ADV AN CE I N FORM AT I ON 4 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-directional ESD Protection

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA123EET1 PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

Contextual Info: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55

Contextual Info: SIEMENS PNP Silicon Transistors • • • • SMBT 5086 SMBT 5087 For AF input stages and driver applications High current gain Low coliector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Type Marking Ordering Code tape and reel PinCContigui ation

LBZX84B5V1LT1G

Abstract: sot353 marking e5 LBZX84B10LT1G SC 2630 LBZX84B18LT1G LBZX84B27LT1G A5 SC-89 LBZX84B16LT1G marking J2 sot-23 ZENER marking a5 sot-23
Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84B2V0LT1G SERIES 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device CONSTRUCTION SOT– 23 ƽSilicon epitaxial planar

Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84B2V0LT1G Series 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device CONSTRUCTION SOT– 23 ƽSilicon epitaxial planar

Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the