MARKING CODE 16G Search Results

SLUFM1GU

Abstract: hirose 6 pin serial 9 pin serial flash memory 16gb format block diagram laptop ac adapter SLUFM4GU2TUI SLUFM16GU2TU-A usb flash
Contextual Info: 1GB to 16GB USB Flash Module SLUFMxxxU2TU I -y USB Solid-State Flash Disk Capacity: 1GB - 16GB USB 2.0 Compliant Form Factors: • Horizontal Mount • Standard 2x5 or Hirose 9-Pin Connector  2x Planar TSOP Flash or 2x Stacked TSOP Flash High Reliability:

block diagram laptop ac adapter

Abstract: SLUFM16GU2U-A nand flash pcb layout design serial flash memory 16gb format JESD22-B110 nand flash 16gb hirose 6 pin serial 9 pin
Contextual Info: 1GB to 16GB USB Flash Module www.stec-inc.com SLUFMxGU2U I -y USB Solid-State Flash Disk Capacity: 1GB - 16GB USB 2.0 Compliant Form Factors: • Horizontal Mount • Standard Connector or 9-Pin DConnector  1-High TSOP Flash Placement or Stacked TSOP Flash Placement

marking code IC .ftf

Abstract: BFR340T GPS05996
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Target Data • • • • Low Voltage/ Low Current Operation High Transistion Frequency of 16GHz High Insertion Gain Ideal for Low Current and Amplifiers and Oscillators 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,

Contextual Info: Product Data Sheet Industrial USB Flash Drive unitedCONTRAST II USB2.0 high speed USB Flash Drive unitedCONTRAST 512MByte to 16GByte USB Flash Drive UFD provides non-volatile, solid-state storage in different design options, making it perfectly suited for OEM and industrial market. Swissbit uses high end USB 2.0 flash memory controller, providing high

32GB eMMC

Abstract: MTFC8GLDEA-4M IT micron eMMC 5.0 emmc bga 162 BGA 221 eMMC micron emmc application note 221 ball eMMC memory emmc 4.41 firmware operation MTFC4G micron emmc 4.5
Contextual Info: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC4GMDEA-4M IT, MTFC8GLDEA-4M IT, MTFC16GJDEC-4M IT, MTFC32GJDED-4M IT, MTFC64GJDDN-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash

Contextual Info: Flush Silhouette Switches LB Series / LBW Series ø16mm LB Series Switches and Pilot Lights LB Series Flush Silhouette Switches ø16mm LB Series Miniature Switches and Pilot Lights LBW Series Flush Silhouette Switches S t y lis h a nd Fuct iona l IDEC's extensive range of LB/LBW series switches can be used for a

SK162

Contextual Info: SKFM1640C-D2 FM120-M+ WILLAS THRU THRU 16.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER D2PAKRECTIFIERS PACKAGE-20V- 200VSKFM16200C-D2 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

emmc bga 162

Abstract: BGA 221 eMMC MTFC4GLDDQ-4M IT MTFC32GJDDQ-4M IT emmc CID eMMC 4.41 application note MTFC4GLDDQ-4M MMC04G 221 ball eMMC memory MMC08G
Contextual Info: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB: e•MMC Features e·MMC Memory MTFC4GLDDQ-4M IT, MTFC8GLDDQ-4M IT MTFC16GJDDQ-4M IT, MTFC32GJDDQ-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball LBGA (RoHS 6/6compliant)

LA2F-32C61

Abstract: TWR542 21c14 LFTD18 LA1F-32C61 OSS-62852F3 LA2L-A1C23 TWR522 LA1F-21C23 LA1F-2C14
Contextual Info: ø16 L6 Series Miniature Control Units Light duty L6 series Suitable for electronic devices and for food processing and packaging industries. • Locking lever removable contact blocks • Bright and clear LED illumination • Gold-clad cross bar contacts and silver contacts

DPDT 5V

Abstract: LA1T
Contextual Info: ø16mm L6 Series Miniature Control Units 07/02/08 ø16 L6 Series Miniature Control Units Series L6 Series Miniature Control Units Mounting Hole Size ø16 LA L/LA P Type LA B LA1T LA S Appearance Illuminated Pushbuttons (momentary, maintained) Pilot Lights

Contextual Info: SDB160G SCHOTTKY RECTIFIER DIODE Schottky Barrier Rectifier General Description The SDB160G surface mounted Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power

Contextual Info: Product Data Sheet Industrial USB Flash Drive Module U-110 Series USB2.0 high speed U-110 Series USB Flash Drive Module 1GByte to 16GByte USB Flash Drive Module provides non-volatile, solid-state storage in a compact design, making it perfectly suited for embedded applications. The standard USB 2.0 interface provides designers with a true plug-n-play storage

SLCF16GM4TU

Abstract: SLCF16GM4TUI mwdma
Contextual Info: 8GB and 16GB CompactFlash Card SLCFxxxM4TU I Solid-State Memory Card (No Moving Parts) Capacity: 8GB - 16GB CFA 4.1 and ATA-7 Compatible PCMCIA Memory Mode: • UDMA Modes Supported: Up to 6 • PIO Modes Timing: up to 80ns PCMCIA I/O Mode:  UDMA Modes Supported: Up to 6

STEC M2T CF 1.0.0

Abstract: SLCF128M2TUI 94000-01889 SLCF128M2TUI-S SLCF512M2TUI SLCF16GM2TUI SLCF2G 94000-01889-3A4 SLCF1GM2TUI SLCF256M2TU
Contextual Info: 128MB to 16GB CompactFlash Card www.stec-inc.com SLCFxxxM2TU I (-x) Solid-State Memory Card (No Moving Parts) Capacity: 128MB - 16GB CFA 4.1 and ATA-7 Compatible PCMCIA Memory Mode: • UDMA Modes Supported: Up to 4 • PIO Modes Timing: up to 80ns PCMCIA I/O Mode:

DDR3 timing diagram

Abstract: QuadDie DDR3 DDR3 impedance DDR3 SDRAM micron MT41J2G8 micron marking code information micron power resistor Micron quaddie micron technology 2013 ddr3 78 ball
Contextual Info: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks

MT41K2G8

Abstract: MT41K4G4 MT41K1GM4 micron technology 2013 Micron quaddie
Contextual Info: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3L SDRAM Features QuadDie DDR3L SDRAM MT41K4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41K2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks

DDR3 SDRAM micron

Abstract: micron technology 2013 DDR3 impedance QuadDie DDR3
Contextual Info: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks

MT41K2G8

Contextual Info: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3L SDRAM Features QuadDie DDR3L SDRAM MT41K4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41K2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks

JD38999

Abstract: TV07WCI Socapex TV06RW TVS07BCI NATO STANAG 1135 TVP00WCI TVPS00FCI TV07*W MIL-DTL-38999-III tv06rw
Contextual Info: TV CTV - E113/D 20/12/01 16:41 Page 3 Tri-Start TV-CTV TM Main features • Shell material - Composite - Aluminium - Marine bronze - Stainless steel l heno ED Amp O R V L APP QP • Finish - Olive drab cadmium plating - Nickel plating - Passivation for steel versions

hy27u*08ag5

Abstract: HY27UH08AG5B Hynix 16Gb Nand flash hynix nand NAND FLASH 64MB reset nand flash HYNIX hynix nand edc spare area code hynix nand flash 1.8v 4Gb
Contextual Info: 1 HY27UH08AG5B Series 16Gbit 2Gx8bit NAND Flash 16Gb NAND FLASH HY27UH08AG5B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

HYNIX HY27UH08AG5M

Abstract: HY27UH08AG5M hynix nand spare area 16gb hy27u*08ag5 HY27UH08AGDM hynix nand flash Hynix 16Gb Nand flash
Contextual Info: Preliminary HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HYNIX HY27UH08AG5M

Abstract: HY27UH08AG5M hy27u*08ag5 hynix nand Hynix 16Gb Nand flash 16G nand HY27U*G5M hynix nand PROGRAMMING marking GG uLGA
Contextual Info: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HT11G - HT18G 1.0AMP Glass Passivated High Efficient Rectifiers TS-1 Features — Glass passivated chip junction — High efficiency, Low VF — High current capability — High reliability — High surge current capability — For use in low voltage, high frequency inverter,