s72 sot 23
Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
Contextual Info: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA
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bs8702n7002ot-23bs850+1122n7002bs170s72 sot 23transistor marking s722n70192n7002 marking s722n7002 s72 sot-23s72 sot23transistor s72 sot23transistor s72s72 transistor
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ZVN3320F
Abstract: ZVN3320
Contextual Info: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360
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ot-23zvn3320fzvn3310fzvn4106f+7zvn3306f2n7002vn10lfbs170fbss13zvp1320fzvn3320
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ZVN4206E
Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Contextual Info: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA
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ot-23zvn3320fbss123zvn3310f+9zvn4106fzvn3306f2n7002vn10lfbs170fbss138zvn4206ebss123 marking sab55123
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2N7000KL-TR1-E3
Abstract: BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX
Contextual Info: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*
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2n7000kl/bs170klo-226aao-92-18rm7000kl+718-jul-082n7000kl-tr1-e3bs170kl-tr1170kl2n7000kl-tr1bs170kl-tr1-e3rohs marking code vishay siliconix
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bs170kl
Contextual Info: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*
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2n7000kl/bs170klo-226aa7000klo-92-18rm+3170kl08-apr-05bs170kl
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170KL
Abstract: BS170KL-TR1-E3 BS170KL-TR1 7000KL 2N7000KL-TR1 2N7000KL-TR1-E3 LOGO TD Display 2N7000KL
Contextual Info: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*
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2n7000kl/bs170klo-226aao-92-18rm7000kl+7170klbs170kl-tr1-e3bs170kl-tr12n7000kl-tr12n7000kl-tr1-e3logo td display2n7000kl
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BS170KL
Abstract: 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173
Contextual Info: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V
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2n7000kl/bs170klo-226aao-92-18rm7000kl+9170kls-40247--rev16-feb-04bs170kl2n7000kl equivalent2n7000kl-tr1bs170kl-tr12n7000klrg173
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2N7000KL
Abstract: 170KL BS170KL-TR1 2N7000KL-TR1
Contextual Info: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V
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2n7000kl/bs170klo-226aao-92-18rm7000kl+5170kl08-apr-052n7000klbs170kl-tr12n7000kl-tr1
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MARKING bs170
Contextual Info: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products
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bs170mmbf170500maot-23+1marking bs170
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BS170RL1
Abstract: MOSFET bs170 BS170
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk
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bs170o-226bs170rl1mosfet bs170 |
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BS170
Abstract: MOSFET bs170 bs170 TO-92 pin diagram of bs170 TO-226 MARKING bs170 TO226 BS170RLRA BS170RLRAG to-92 mosfet
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)
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bs170o-226o1982bs170/d+9mosfet bs170bs170 to-92pin diagram of bs170to-226marking bs170to226bs170rlrabs170rlragto-92 mosfet
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BS170
Abstract: BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit VDS 60 Vdc VGS VGSM ±20 ±40 Vdc Vpk Drain Current Note 1. ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD
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bs170r14525bs170/dbs170 application note+5bs170rl1bs170rlrabs170rlrmbs170rlrpbs170zl1
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2N7002 marking code 72
Abstract: 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n (V ) rDS(on) Max (Q) V G S (th ) (V) b (A) 2N7000 5 @ V GS = 1 0V 0.8 to 3 0.2 2N7002 7,5 @ V QS= 10 V 1 to 2.5 0.115 5.5 @ V q 3 = 10 V
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2n7000/2n7002vq1000j/pbs1702n7000+112n7002vq1000jvq1000ps-04279--16-jul-012n7002 marking code 722h70002n7002 marking code 72 jtvp8marking code 722n7002 marking code vishay
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BS170G
Abstract: BS170 BS170RLRAG mosfet bs170
Contextual Info: BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • This is a Pb−Free Device* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)
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bs170go-226bs170/dbs170+2bs170rlragmosfet bs170
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BS170 application note
Abstract: BS170 BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 pin diagram of bs170 bs170 TO-92
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk
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bs170o-226bs170/dbs170 application note+8bs170gbs170rl1bs170rlrabs170rlrmbs170rlrpbs170zl1pin diagram of bs170bs170 to-92
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BS170
Abstract: BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 bs170 TO-92
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk
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bs170o-226bs170/dbs170g+6bs170rl1bs170rlrabs170rlrmbs170rlrpbs170zl1bs170 to-92
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transistor BS170
Abstract: equivalent of BS170 TO 92 BS170 BS170 transistor MOSFET BS170 diode marking 226 BS170G BS170RL1 BS170RLRA BS170RLRAG
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40
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bs170o-226bs170/dtransistor bs170+8equivalent of bs170to 92 bs170transistor mosfet bs170diode marking 226bs170gbs170rl1bs170rlrabs170rlrag
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code for 2n7002
Abstract: 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 BS170 VQ1000P SILICONIX 2N7002
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5
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2n7000/2n7002vq1000j/pbs1702n7002+82n7000vq1000pvq1000jo-226aacode for 2n70022n7002 marking code 722n7000 mosfetsiliconix 2n7002
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2n7000 equivalent
Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
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2n7000/7002vq1000j/pbs1702n7000+102n7002vq1000pvq1000jcapaci022n7000 equivalent2n7002 marking2n7002 siliconixequivalent for bs170equivalent of bs170mosfet bs170
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equivalent of BS170
Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P
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2n7000/7002vq1000j/pbs1702n7000+132n7002vq1000pvq1000jcapacitan02equivalent of bs1702n7002 siliconix2n7000 equivalentequivalent for bs170marking bs1702n7000 data sheetcodes marking 2n7002siliconix 2n70022n7002 marking
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BS170
Abstract: VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V
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2n7000/7002vq1000j/pbs1702n7000+72n7002vq1000pvq1000jp-37993--rev2n7000 70027002 2n7002bs170 siliconix
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VQ1000J
Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
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2n7000/7002vq1000j/pbs1702n7000+62n7002vq1000pvq1000jcapaci02to-92-18rs-52429
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2N7000
Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5
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2n7000/2n7002vq1000j/pbs1702n7002+82n7000vq1000pvq1000j08-apr-05mosfet bs1702n7002 vishayto92sbs170-ta
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2N7002 MARKING
Abstract: markings 2n7002 2n7002 siliconix s4 vishay VQ1000J/P 2N7002 marking code 72 APPLICATION NOTES VQ1000J 2n7000 2N7002 vishay SILICONIX 2N7002
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5
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2n7000/2n7002vq1000j/pbs1702n7002+112n7000vq1000pvq1000j18-jul-082n7002 markingmarkings 2n70022n7002 siliconixs4 vishay2n7002 marking code 72 application notes2n7002 vishaysiliconix 2n7002
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