MARKING BR SOT Search Results

marking C1

Abstract: TMPTA70 TMPT5401 h2t1
Contextual Info: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0

sot-23 marking 7z

Abstract: MARKING A8C SOT-23 7y sot23 MMBR941BLT1 SOT-23 A8A marking 7m marking 7Y SOt23 RF Transistors markING 7Z MMBR920LT1
Contextual Info: SOT-23 TRANSISTORS continued Plastic-Encapsulated Bias Resistor Transistors for General-Purpose Applications Pinout: 1-Base, 2-Emltter, 3-Collector hpE@ lc V (BR)CEO Marking Device NPN PNP NPN PNP Volts (Min) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1

marking BS sot23

Abstract: marking Bq sot23 2SC2412 Transistor marking BQ marking BQ sot-23 Marking br sot23 Transistor bs sot23 marking BS SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SC2412 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES • Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors 2SC5658 General purpose transistors NPN SOT-723 FEATURES z Low Cob z Complements the 2SA2029 1. BASE 2. EMITTER 3. COLLECTOR Marking: BQ BR BS Absolute maximum ratings (Ta=25 ℃unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SC2412 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES • Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel

marking BS SOT23

Abstract: marking Bq sot23 marking BQ sot-23 bq transistor sot23 transistor sot23 MARKING 560 Transistor marking BQ Marking br sot23 Transistor marking br sot23 marking BS SOT-23 transistor sot23 pf
Contextual Info: 2SC2412 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage

Contextual Info: 2SC2412K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features — Low Cob ,Cob = 2.0 pF (Typ). — Complements the 2SA1037AK 2.80 1.60 MARKING : BQ, BR, BS 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

tn2460

Abstract: TN2460T
Contextual Info: HSffSi TN2460 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BR DSS TN2460L 240 TN2460T 240 "W1 >D (mA) PACKAGE 60 76 TO-92 60 51 SOT-23 Performance Curves: VNDN24 J¥ PRODUCT MARKING TN2460T TQ3 TO-92 (TO-226AA) BOTTOM VIEW

zt751

Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
Contextual Info: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30

2SC2412K

Abstract: 2SA1037AK
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC2412K SOT-23-3L TRANSISTOR NPN FEATURES z Low Cob ,Cob = 2.0 pF (Typ). z Complements the 2SA1037AK 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

N790A

Abstract: STN790A
Contextual Info: STN790A MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR • ■ ■ ■ ■ ■ Type Marking STN790A N790A VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 3 A CONTINUOUS COLLECTOR CURRENT 60 V BREAKDOWN VOLTAGE V(BR CER)

itt 2222a

Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
Contextual Info: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min

MMBT3960

Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2

150X1

Contextual Info: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

TRANSISTOR D882 input

Abstract: D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet
Contextual Info: D882 SOT-89 Plastic-Encapsulate Transistors Transistor NPN FEATURES D Power dissipation A 4 o µ¥Î» £ºmm P CM :1.25 W (Tamb=25 C) E HE •û ºÅ Collector current Marking V (BR)CBO :40 V 3 b1 2 C 1.BASE min ·û ºÅ 1.5 3 0.65 e1 0.65 HE 1.6 max 4.25

MLL34

Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
Contextual Info: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max

marking D76

Contextual Info: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D

FH9014

Abstract: FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16
Contextual Info: SOT-23 三极管（SOT-23 TRANSISTORS） 型号 TYPE VCBO V VCEO V IC mA PD mW FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FHT817-16 FHT817-25 FHT817-40 FHT846A FHT846B FHT847A FHT847B FHT847C FHT848A FHT848B FHT848C FHT849A FHT849B FHT849C

Contextual Info: SOT-23 肖特基二极管（SOT-23 SCHOTTKY BARRIER DIODES） 型号 TYPE FHBAS40 FHBAS40-04 FHBAS40-06 FHBAS70 FHBAS70-04 FHBAT54 FHBAT54A V（BR）R Min Vdc IR µA 40 10 40 10 40 10 70 10 70 10 30 10 30 10 IF mA Min 200 200 VF Vdc mA Max V IF 0.5 30 0.5

Contextual Info: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Die Construction Two internal isolated NPN/PNP Transistors in one package Ultra-Small Surface Mount Package SOT-363 A C1 B2 E2 Mechanical Data · · · · · · ·

transistors for uhf oscillators

Abstract: MMBT2369LT1 sot-23 Marking 3D MMBTH69 transistors for oscillators uhf
Contextual Info: SOT-23 TRANSISTORS continued Switching Transistors The following tables are a listing of devices intended for high-speed, low saturation voltage, switching applications. These devices have very fast switching times and low output capacitance for optimized switching performance.