MARKING BBV Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BBV marking

Abstract: 2SD2114 bbv 08 BBV transistor marking BBW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

BBV transistor

Abstract: marking BBW marking BBV BBV marking
Contextual Info: 2SD2114 SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) — — MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

marking code BBH

Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
Contextual Info: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these

bq 8050

Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Contextual Info: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管

bbc 127 324 DIODE

Abstract: 1.0 SMBJ SMBJ130A SMBJ100A SMBJ16CA SMBJ6.5A SMBJ12A SMBJ28A SMBJ40A SMBJ13CA
Contextual Info: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C

bbc 127 324 DIODE

Abstract: marking bbz st marking BBM code SMBJ30A DO-214AA 0/bbc 127 324 DIODE SMBJ16CA-TR bbg marking st transil marking BUZ SMBJ40A st marking BBN code
Contextual Info: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C

bbc 127 324 DIODE

Abstract: marking code BBW st marking BBM code SMBJ12A BUV 481 marking code BUH SMBJ15 SMBJ6.0A/CA smbj marking code st 718 diode
Contextual Info: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ A K

bbc 127 324 DIODE

Abstract: st marking BBM code smbj33ca smbj marking code st 718 diode BUV 481 SMBJ30A DO-214AA SMBJ15 transil diode OCT2001
Contextual Info: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C

BUV 481

Abstract: bbg "marking" diode IPC7531 bbg marking st transil marking bbz ST BUN marking BBW smbj12a SMBJ24a SMBJ12A-TR
Contextual Info: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Operating Tj max: 150 °C ■ JEDEC registered package outline A K Unidirectional SMB (JEDEC DO-214AA)

SMBJ5.0A DO214AA

Abstract: marking code BBW SMBJ5.0A buz bbg "marking" diode SMBJ5.0A bbz marking code st marking BBM code SMBJ15 SMBJ13A-TR SMBJ15A-TR
Contextual Info: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline

st marking BBM code

Abstract: bbn DIODE SMBJ36ATR st marking BBN code BUA DIODE marking code BBW ST BUN marking BBO code SMBJ5.0A buz SMBJ13A-TR
Contextual Info: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline

ci bts 730

Abstract: A18I
Contextual Info: SIEM EN S BTS 730 PWM Power Unit The device allows continuous power control for lam ps,LED s or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse width reduction and overload shutdown • Load dump protection

Leaded Fixed Film Resistors

Abstract: variable resistor spw 068 vishay rCR REPLACEMENT HVR68 Marking a1 rju Resistance nk4 560k 5% rlr05 wk2 680k RESISTOR 2322 156 VISHAY BC Component
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed film resistors vishay vSe-db0007-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

BBV marking

Abstract: 2SD2114
Contextual Info: 2SD2114 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z High DC current gain :hFE = 1200 Typ High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)

st marking BBM code

Abstract: bbn DIODE SMBJ18A-TR SMBJ10A-TR SMBJ12A-TR SMBJ13A-TR SMBJ15A-TR SMBJ16A-TR SMBJ188A-TR SMBJ20A-TR
Contextual Info: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline

BBV transistor

Abstract: 2SD2114 SOT-23 2.D SOT-23-hg VEBO-12V transistor k 820
Contextual Info: 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. High Emitter-Base Voltage. VEBO=12V Min. A L 3 3 C B Top View CLASSIFICATION OF hFE

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

BAKW

Abstract: roederstein carbon film resistors marking a 100G
Contextual Info: MODELS B and H Carbon Film Resistors General Purpose, High Voltage FEATURES • Single units to 10 W, 40 KV, ± 5% and matched pairs BP to 20 W, 80 KV, ± 1% • Radial lug or axial lead • Supplied with Mylar heat shrink protective sleeve .002" [.051mm] thick

SO 313

Contextual Info: VISHAY Vishay Dale Carbon Film Resistors, General Purpose, High Voltage T FEATURES • Single units to 10 W, 4 0 KV, ± 5% and m atched pairs BP to 20 W, 80 KV, ± 1% • Radial lug or axial lead • Supplied with Mylar heat shrink protective sleeve .002"

bfw 10 transistor

Abstract: HBFW BBFW BBRW dale leaded resistor code transistor BFW 10
Contextual Info: B, H Vishay Dale Carbon Film Resistors, General Purpose, High Voltage FEATURES • Single units to 10 W, 40 KV, ± 5% and matched pairs BP to 20 W, 80 KV, ± 1% • Radial lug or axial lead • Supplied with Mylar heat shrink protective sleeve .002" [.051mm] thick

D 795 A

Abstract: bfw 150 dale P25C
Contextual Info: B, H Vishay Dale Carbon Film Resistors, General Purpose, High Voltage FEATURES • Single units to 10 W, 40 KV, ± 5% and matched pairs BP to 20 W, 80 KV, ± 1% • Radial lug or axial lead • Supplied with Mylar heat shrink protective sleeve .002" [.051mm] thick

BBV marking

Abstract: BAEW2M50LF08 bbfw
Contextual Info: B, T Vishay Dale Carbon Film Resistors, General Purpose, High Voltage FEATURES • Ratings to 10W, 40kV • Available with either radial lugs or axial leads • Epoxy/enamel coated, with additional Mylar heat shrink sleeve 0.002” [0.051mm] thick • ± 20% tolerance standard, tolerances of ± 15%, ± 10%

Contextual Info: MODELS B and H Carbon Film Resistors d a le General Purpose, High Voltage FEATURES • Single units to 10 W, 40 KV, ± 5% and matched pairs BP to 20 W, 80 KV, ± 1% • Radial lug or axial lead • Supplied with Mylar heat shrink protective sleeve .002" [.051mm] thick