MARKING A3 AMPLIFIER Search Results

a3s marking

Abstract: DSA4005
Contextual Info: Tentative DSA4005 Total pages page DSA4005 Silicon PNP epitaxial planar type For general amplifier Marking Symbol : A3 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

Contextual Info: RF2043
       
      • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment

RF Transistor Selection

Contextual Info: RF2046 Preliminary
       
      • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment

BE 187 TRANSISTOR

Abstract: 482 transistor on BE 187 TRANSISTOR
Contextual Info: RF2047 Preliminary
       
      • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment

TSDF1205R

Abstract: TSDF1205
Contextual Info: TSDF1205/TSDF1205R Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.

a3 sot 343

Contextual Info: T fmtt T S D F 1 2 0 5 W / T S D F 1 2 0 5 R W Semiconductors Silicon NPN High Frequency Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain

TSDF1205RW

Abstract: a3 sot 343 TSDF1205W
Contextual Info: TSDF1205W/TSDF1205RW Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.

Contextual Info: T fmtt TSDF1205/TSDF1205R Semiconductors Silicon NPN High Frequency Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain

BFR93

Abstract: bfr93R marking amplifier j02 transistor BFR93 682 MARKING SOT-23 marking A3 amplifier
Contextual Info: BFR93/BFR93R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency

transistor BFR93

Contextual Info: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

BFR93A application board

Abstract: Temic 3 x 7 597 telefunken diodes 914 Temic Semiconductors bfr93a BFR93A BFR93AR 682 MARKING SOT-23
Contextual Info: BFR93A/BFR93AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 1 13 581 13 581

"marking E1"

Abstract: BFS17R BFS17 d 1556 transistor
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1

BFR93A

Abstract: marking A3 amplifier case 449 S parameters of BFR93AR GHz transistor
Contextual Info: T e m ic BFR93A/BFR93AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency

ML 1557 b transistor

Contextual Info: T e m ic BFS17/BFS17R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package l R E1— 1

BFS17A

Abstract: BFS17AR
Contextual Info: BFS17A/BFS17AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features

706 TRANSISTOR sot-23

Contextual Info: T r lu i r BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure •

silicon npn planar rf transistor sot 143

Abstract: 556 national BFR92A BFR92AR BFR92A P2 Microelectronic sot 236 CB
Contextual Info: BFR92A/BFR92AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 1 13 581 13 581

j4313-o

Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

Contextual Info: Temic BFS17A/BFS17AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications W ide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator ap­

SOT-23 marking 717

Abstract: un 1044 Telefunken u 257
Contextual Info: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

TL 555c

Abstract: JESD22-A114-A JESD78
Contextual Info: NLU1GU04 Single Unbuffered Inverter The NLU1GU04 MiniGatet is an advanced high-speed CMOS unbuffered inverter in ultra-small footprint. This device is well suited for use in oscillator, pulse-shaping and high input impedance amplifier applications. For digital applications,

Contextual Info: Semiconductor FUS3881 CMOS Chopper Stabilized, Hall-Effect Sensor Latch 2.2V-18V Features □ Optimized for BCD Motor Application □ □ □ □ Operating Voltage Range: 2.2V to 18V CMOS Device for Optimal Stability Chopper Stablized: No Amplifier Offset

BFW92

Contextual Info: BFW92 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50

marking PA SOT23-6

Abstract: sot23-6 package marking PA marking A3 amplifier 4 pin GSM1800 RF2367 RF2367PCBA-41X marking s22 sot23-6 marking A3 amplifier
Contextual Info: RF2367 PCS CDMA/TDMA/GSM1800 3V PA DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • TDMA/CDMA/FM PCS Tx Amplifier • GSM1800 Driver Amplifier • Low Noise Transmit Driver Amplifier • General Purpose Amplification • 2.4GHz WLAN Systems