MARKING A3 AMPLIFIER Search Results

Contextual Info: RF2043
       
      • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment

a3 sot 343

Contextual Info: T fmtt T S D F 1 2 0 5 W / T S D F 1 2 0 5 R W Semiconductors Silicon NPN High Frequency Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain

TSDF1205RW

Abstract: a3 sot 343 TSDF1205W
Contextual Info: TSDF1205W/TSDF1205RW Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.

Contextual Info: T fmtt TSDF1205/TSDF1205R Semiconductors Silicon NPN High Frequency Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain

transistor BFR93

Contextual Info: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

BFR93A

Abstract: marking A3 amplifier case 449 S parameters of BFR93AR GHz transistor
Contextual Info: T e m ic BFR93A/BFR93AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency

ML 1557 b transistor

Contextual Info: T e m ic BFS17/BFS17R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package l R E1— 1

706 TRANSISTOR sot-23

Contextual Info: T r lu i r BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure •

Contextual Info: Temic BFS17A/BFS17AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications W ide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator ap­

SOT-23 marking 717

Abstract: un 1044 Telefunken u 257
Contextual Info: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

Contextual Info: Semiconductor FUS3881 CMOS Chopper Stabilized, Hall-Effect Sensor Latch 2.2V-18V Features □ Optimized for BCD Motor Application □ □ □ □ Operating Voltage Range: 2.2V to 18V CMOS Device for Optimal Stability Chopper Stablized: No Amplifier Offset

marking PA SOT23-6

Abstract: sot23-6 package marking PA marking A3 amplifier 4 pin GSM1800 RF2367 RF2367PCBA-41X marking s22 sot23-6 marking A3 amplifier
Contextual Info: RF2367 PCS CDMA/TDMA/GSM1800 3V PA DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • TDMA/CDMA/FM PCS Tx Amplifier • GSM1800 Driver Amplifier • Low Noise Transmit Driver Amplifier • General Purpose Amplification • 2.4GHz WLAN Systems

BFW92

Contextual Info: Tem ic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92 Marking: BFW92

Contextual Info: NLB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM

Contextual Info: RF6000-3 Preliminary 3V 1900MHZ LINEAR AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V CDMA US-PCS Handsets • 3V CDMA2000/1X PCS Handsets • Designed for Compatibility with Qualcomm Chipsets • Spread-Spectrum Systems Product Description

BFR91A

Contextual Info: TEMIC BFR91A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

bfr91

Contextual Info: TEMIC BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •

MAR 618 transistor

Abstract: MAR 641 TRANSISTOR bfr96ts MAR 527 transistor L 0403 817
Contextual Info: Temic BFR96TS Semiconductor i Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96TS Marking: BFR96TS Plastic case ~ TO 50

Contextual Info: RF6000-2 Preliminary 3V 900MHZ LINEAR AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V CDMA/AMPS Cellular Handsets • 3V CDMA2000/1X Cellular Handsets • Designed for Compatibility with Qualcomm Chipsets • Spread-Spectrum Systems

din 3141

Contextual Info: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50

Contextual Info: KSC2223 KSC2223 High Frequency Amplifier • • • • Very small size to assure good space factor in Hybrid IC applications fT=600MHz TYP at IC=1mA Cob=1pF (TYP) at VCB=6V NF=3dB (TYP) at f=100MHz 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor

Contextual Info: NLU1GU04 Single Unbuffered Inverter The NLU1GU04 MiniGatet is an advanced high−speed CMOS unbuffered inverter in ultra−small footprint. This device is well suited for use in oscillator, pulse−shaping and high input impedance amplifier applications. For digital applications,

pulse amplifier measurement

Abstract: LT1395 LT1396 LT1397 SSOP-16
Contextual Info: LT1395/LT1396/LT1397 Single/Dual/Quad 400MHz Current Feedback Amplifier U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 400MHz Bandwidth on ± 5V AV = 1 350MHz Bandwidth on ± 5V (AV = 2, –1) 0.1dB Gain Flatness: 100MHz (AV = 1, 2 and –1) High Slew Rate: 800V/µs

ML 1557 b transistor

Abstract: lm 1766 ic LM 748
Contextual Info: TEMIC BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain