MARKING 64 TRANSISTOR Search Results

BFQ64

Abstract: VPS05162 MARKING 7A SOT89
Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 mA to 150 mA. Type Marking Ordering Code tape and reel BFQ 64 FC Q62702-F1061 Pin Configuration 1

marking BSs sot23

Abstract: transistor EKs ic 41 b uPC1659 transistor EKs 80 Q62702-C1659 Q62702-S535 AMS marking code
Contextual Info: BCX 41 BSS 64 NPN Silicon AF and Switching Transistor BCX 41 BSS 64 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BCX 42, BSS 63 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

marking code SOT23 SSi

Abstract: MARKING code SSi SOT23 code marking ssi sot-23 O ssi SOT-23
Contextual Info: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigui ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C

marking BSs sot23

Abstract: marking DKs marking BSs sot23 siemens
Contextual Info: SIEMENS PNP Silicon AF and Switching Transistors • • • • BCX42 BSS 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel) Pin Configuration

marking BSs sot23

Abstract: Q62702-C1485 Q62702-S534 bcx42
Contextual Info: PNP Silicon AF and Switching Transistors BCX 42 BSS 63 For general AF applications ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BCX 41, BSS 64 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration

transistor EKs

Abstract: transistor marking code 7C marking BSs sot23 transistor EKs 80 BCX41 marking AMs 4 pin bss 100 transistor marking BSs sot23 siemens
Contextual Info: SIEMENS NPN Silicon AF and Switching Transistor BCX 41 BSS 64 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • PZTA 63 PZTA 64 For general AF applications High collector current High current gain Complementary types: PZTA 13, PZTA 14 NPN Type Marking Ordering Code (tape and reel) Pin Conf igural ion 1 2 3

marking BSs sot23

Abstract: bcx42
Contextual Info: BCX 42, BSS 63 PNP Silicon AF an Swiching Transistors 3 • For general AF applications • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 41, BSS 64 NPN 2 1 Type Marking Pin Configuration BCX 42 DKs 1=B

1713 Siemens

Abstract: Siemens 1713
Contextual Info: SIEMENS NPN Silicon Darlington Transistors • • • • PZTA 13 PZTA 14 For general AF applications High collector current High current gain Complementary types: PZTA63 PZTA 64 PNP Type Marking Ordering Code (tape and reel) Pin Coni igura ion 1 2 3 4

Contextual Info: 32E D • Ö23b320 O G l b U l S « S I P NPN Silicon RF Transistor -p_ ^ | « ^ 3 .S IE M E N S / SPCLi SEMICONDS _ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. TVpe Marking

DIN 3021-3 STANDARD

Abstract: DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp
Contextual Info: Operating Instructions VEGASWING 51 - transistor PNP Contents Contents 1 About this document 1.1 1.2 1.3 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 6

DSA0023736

Contextual Info: KSP62/63/64 KSP62/63/64 Darlington Transistor • Collector-Emitter Voltage: VCES=KSP62: 20V KSP63/64: 30V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

marking 64

Abstract: DTC114
Contextual Info: DTC114 YCA/YSA/YE/YUA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

0107MA

Abstract: MMBTA63 MMBTA64 sot 23 mark 64
Contextual Info: SEMICONDUCTOR MMBTA63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E B 2 CHARACTERISTIC Collector-Base SYMBOL RATING UNIT VCBO -30 V MMBTA63/64 Voltage H A 3 G MAXIMUM RATING Ta=25 L D L 1 VEBO -10

DTC114YKA

Abstract: DTC114YE DTC114YUA sot-23 MARKING 3l DTA114ECA DTC114Y DTC114YCA DTC114YSA
Contextual Info: DTC114YE/DTC114YUA/DTC114YKA DTC114YCA/TC114YSA Elektronische Bauelemente NPN Digital Transistors Built-in Resistors FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors (see equivalent circuit).

Contextual Info: 35E D • Ö 2 3 b 3 2 0 □ ü lb ? Q Ü 7 NPN Silicon AF and Switching Transistors IS IP BCX41 BSS64 T ' X i -0 * 1 SIEMENS/ SPCLi SEMICÔNDS • High breakdown voltage • Low collactor-emltter saturation voltage • Complementary types: BOX 42, BSS 63 PNP

marking BSs sot23

Contextual Info: BSS 64 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1

Contextual Info: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

marking sk sot-23

Abstract: SOT23 marking sk SOT-23 marking E9 j y w sot23 SOT-23 marking SK MARKING SY SOT23 sot23 Marking f7 marking KL sot-23 sk sot-23 sot-23 Marking EJ
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

stac2942

Abstract: STAC2942B FERRITE TOROID transistor marking code HF
Contextual Info: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

transistor equivalent book

Abstract: marking 64 transistor ic equivalent book
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC114YNND03 TRANSISTOR WBFBP-03B 1.2x1.2×0.5 unit: mm DESCRIPTION NPN Digital Transistor TOP I FEATURES 1) Built-in bias resistors enable the configuration of an

DTC143TE

Abstract: DTC144TSA
Contextual Info: TM Micro Commercial Components DIGITAL TRANSISTORS MCC Part Number Power Dissipation Output Current Supply Voltage Pd mW Io(mA) VCC(V) DC Output Current Voltage Gain Input Input Transistion Frequency Package Polarity Marking Code Internal Diagram Gi Vo(V)

LUMF23NDW1T3G

Abstract: transistors marking HJ mh 7489 789 marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Power Management dual transistors zApplication Power management circuit LUMF23NDW1T1G 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product

AT-41511

Abstract: AT-41533-TR1G AT-41533 AT415 zo 103 ma S21E AT-41511-TR1G AT-41533-BLKG AV02-0798EN AT-41511-BLKG
Contextual Info: AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors Data Sheet Description Features Avago’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41533 uses