MARKING 56B 6 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

ZENER 34b

Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G MAXIMUM RATING - NPN Rating Symbol Value Unit Collector − Emitter Voltage

Contextual Info: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

transistor 56B marking

Abstract: TRANSISTOR BC 119
Contextual Info: BC856/BC857/BC858/BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER SOT- 23 225 mW Unit: inch mm FEATURES .103(2.60) .056(1.40) .047(1.20) Collector Current IC = -100mA Complimentary (NPN) Devices : BC846/BC847/BC848/BC849 Series

Contextual Info: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

c858

Abstract: BC856R
Contextual Info: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

BC859B-AU

Abstract: transistor BC SERIES BC856B-AU
Contextual Info: BC856-AU,BC857-AU,BC858-AU,BC859-AU SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

CER0456B

Abstract: MARKING 56B 6
Contextual Info: CER0456B 5.8 GHz BPF Rev 1 – Origin Date: July 31, 2006 – Revision Date: January 12, 2007 Features • Low Loss • Low Ripple Description Surface mount, silver Ag coated ceramic filter for use in broadband applications. Weight: 1.1 grams typical Material: Filter is composed of a ceramic

Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B

SK 54B

Abstract: marking SK SK 59B
Contextual Info: SK52B - SK515B CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA Pb RoHS COMPLIANCE Features — For surface mounted application — Metal to sillicon rectifier, majority carrier conduction — Low forward voltage drop — Easy pick and place

5251B

Abstract: CMBZ-5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.8 0.48 1 0.38 ri 3 i 2.6 1 2.4 11 0.14 _!-02_ 0.89 0.60 0.40 Marking CMBZ5230B 31B

200mWatts

Abstract: transistor 56B marking
Contextual Info: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/

zener 73B

Abstract: smc5346b SMC53
Contextual Info: SMC5342B series Surface Mount Zener Diodes SURFACE MOUNT ZENER DIODES 5.0 WATTS P b Lead Pb -Free Features: * Glass passivated chip * Low leakage * Built-in strain relief * Low inductance * High peak reverse power dissipation * For use in stabilizing and clipping circuits with high

Contextual Info: O K I electronic components KGF1181B_ Medium-Power Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1181B is a two-stage medium-power UHF-band amplifier that features high gain, high output power, and low power dissipation. The internally matched 50 i2 input and output

Contextual Info: SK52B thru SK515B Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020

Contextual Info: SK52B - SK515B CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA Features — For surface mounted application — Metal to sillicon rectifier, majority carrier conduction — Low forward voltage drop — Easy pick and place — High surge current capability

smd transistor 41B

Abstract: 5251B SMD 41B sot23 5241B zener 35b smd MARKING 8g 5233B 81F smd CMBZ-5245B SMD marking 8M zener
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS

ZENER 1N5

Abstract: 1N52B 1N52 Hitachi DSA002711
Contextual Info: 1N5223B through 1N5258B Silicon Epitaxial Planar Zener Diodes for Voltage Regulation ADE-208-137 Z Preliminary, Rev. 0 Aug. 1993 Features • Glass package DO-35 structure ensures high reliability. • Wide spectrum from 2.7V through 36V of zener voltage provide flexible application.

ic 41b sot23

Abstract: 46B smd
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE

smd transistor 41B

Abstract: SMD 41B sot23 5241B 5252B CMBZ-5251B smd 41B 5233B 5245B CMBZ-5245B CMBZ5230B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE

ATML U 030

Abstract: ATML H ATMLH ATML U 010 ATML ATML 010 atml h 04 ATML U AT93C66B-MAHM-T atmlhyww
Contextual Info: Features • Low-voltage and standard-voltage operation – VCC = 1.7V to 5.5V • User-selectable internal organization • • • • • • – 2K: 256 x 8 or 128 x 16 – 4K: 512 x 8 or 256 x 16 Three-wire serial interface Sequential read operation 2MHz clock rate 5V

Contextual Info: SK52B thru SK515B Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020