MARKING 544 AMPLIFIER Search Results

2SJ106

Contextual Info: SILICON P CHANNEL JUNCTION TYPE 2SJ106 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm ANALOG SWITCH APPLICATIONS. + CL5 CONSTANT CURRENT APPLICATIONS. IMPEDANCE CONVERTER APPLICATIONS. . High Breakdown Voltage : Vg d S= 50V Min. . High Input Impedance

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

0709s

Contextual Info: 2SC4842 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. N F = l.ldB , |S2le|2= 14dB f=lGHz 2 1 J:0 .1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

NEC 2561

Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Contextual Info: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym

marking 1p

Contextual Info: MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. http://onsemi.com

TP3053

Abstract: 26B01 tp3057 tp3057n 0z2 marking
Contextual Info: TP3054 TP3057 ‘‘Enhanced’’ Serial Interface CODEC Filter COMBO Family General Description Features The TP3054 TP3057 family consists of m-law and A-law monolithic PCM CODEC filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM

Contextual Info: TIBPAL16L8-15M is Not Recommended for New Designs TIBPAL16L8-15M, TIBPAL16R4-15M HIGH-PERFORMANCE IMPACT PAL CIRCUITS SRPS018B − D3338, JANUARY 1986 − REVISED NOVEMBER 2011 D High-Performance Operation: D D D TIBPAL16L8’ J OR W PACKAGE Propagation Delay . . . 15 ns Max

PAL16L8A

Abstract: 81036112A PAL16R8A PAL16R4A-2
Contextual Info: OBSOLETE - No Longer Available PAL16L8AM, PAL16L8A-2M, PAL16R4AM, PAL16R4A-2M PAL16R6AM, PAL16R6A-2M, PAL16R8AM, PAL16R8A-2M STANDARD HIGH-SPEED PAL CIRCUITS SRPS016 – D2705, FEBRUARY 1984 – REVISED MARCH 1992 • • • PAL16L8’ J OR W PACKAGE Choice of Operating Speeds

Contextual Info: W hnl H EW LETT mL'fLMP A C K A R D 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features • Ultra-Miniature Package • Internally Biased, Single +5 V Supply 14 mA • 1.6 dB Noise Figure at 2.4 GHz • 21.8 dB Gain at 2.4 GHz • +3.1 dBm PldB at 2.4 GHz

16l8-25

Contextual Info: TIBPAL16L8-25C, TIBPAL16R4-25C, TIBPAL16R6-25C, TIBPAL16R8-25C TIBPAL16L8-30M, TIBPAL16R4-30M, TIBPAL16R6-30M, TIBPAL16R8-30M LOW-POWER HIGH-PERFORMANCE IMPACT PAL CIRCUITS SRPS059A − FEBRUARY 1984 − REVISED DECEMBER 2010 D D D DEVICE I INPUTS 3-STATE

TIBPAL16R8-20

Contextual Info: TIBPAL16R6-20M and TIBPAL16R8-20M are Not Recommended for New Designs TIBPAL 16L8-15C, TIBPAL 16R4-15C, TIBPAL 16R6-15C, TIBPAL 16R8-15C TIBPAL 16L8-20M, TIBPAL 16R4-20M, TIBPAL 16R6-20M, TIBPAL 16R8-20M HIGH-PERFORMANCE IMPACT  PAL CIRCUITS SRPS019A – FEBRUARY 1984 – REVISED APRIL 2000

Contextual Info: TIBPAL16R6-20M and TIBPAL16R8-20M are Not Recommended for New Designs TIBPAL 16L8-15C, TIBPAL 16R4-15C, TIBPAL 16R6-15C, TIBPAL 16R8-15C TIBPAL 16L8-20M, TIBPAL 16R4-20M, TIBPAL 16R6-20M, TIBPAL 16R8-20M HIGH-PERFORMANCE IMPACT  PAL CIRCUITS SRPS019A – FEBRUARY 1984 – REVISED APRIL 2000

BFR96TS

Contextual Info: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure

B 1359

Abstract: BFR96TS
Contextual Info: BFR96TS Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure

marking package 545 amplifier

Abstract: marking 544 low noise amplifier 544 mmic MMIC 545 smt a1 transistor AMOBP1575P02 AMOBP1575P02-A1 AMOTECH marking 544 amplifier marking package 545 mmic
Contextual Info: HMC548LP3 / 548LP3E v00.0406 AMPLIFIERS - SMT 5 SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz Typical Applications Features The HMC548LP3 / HMC548LP3E is ideal for: Single Supply: Vcc = +5V • Automotive Telematics Low Noise Figure: 1.3 dB • GPS Antenna Modules / Boosters

transistor NEC D 882 p

Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

nec 2412

Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1

4250CN

Abstract: lm4250 ua244 lm42 LM4250CH/NOPB
Contextual Info: LM4250 Programmable Operational Amplifier General Description Features The LM4250 and LM4250C are extremely versatile programmable monolithic operational amplifiers. A single external master bias current setting resistor programs the input bias current, input offset current, quiescent power consumption,

Contextual Info: TL4581 DUAL LOW-NOISE HIGH-DRIVE OPERATIONAL AMPLIFIER SLVS457A – JANUARY 2003 – REVISED MARCH 2003 D D D D D D D D D Equivalent Input Noise Voltage 5 nV/√Hz Typ at 1 kHz Unity-Gain Bandwidth . . . 10 MHz Typ High Slew Rate . . . 9 V/µs Typ Peak-to-Peak Output Voltage Swing

TIBPAL16R6-7C

Abstract: TIBPAL16R4-7C TIBPAL16R8-7C
Contextual Info: OBSOLETE - No Longer Available TIBPAL16L8-7C, TIBPAL16R4-7C, TIBPAL16R6-7C, TIBPAL16R8-7C TIBPAL16L8-10M, TIBPAL16R4-10M, TIBPAL16R6-10M, TIBPAL16R8-10M HIGH-PERFORMANCE IMPACT-X PAL CIRCUITS SRPS006E − D3115, MAY 1988 − REVISED DECEMBER 2010 •

MWA 230

Abstract: transistor top 222 LM4250 4250CN
Contextual Info: LM4250 Programmable Operational Amplifier General Description Features The LM4250 and LM4250C are extremely versatile programmable monolithic operational amplifiers. A single external master bias current setting resistor programs the input bias current, input offset current, quiescent power consumption,