MARKING 4 INFINEON Search Results

barcode label infineon

Abstract: SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363
Contextual Info: GaAs Components Package Information 5 Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-343, SOT-363, P-TSFP-4

PEF24624

Abstract: pef22624 B78421P1853A005 marking CODE n3 marking code rdc marking n3 SOCRATES Y787
Contextual Info: EP13 Interfacetransformer Socrates chipset 29.07.2004 Preliminary Datasheet Ordering Code: Matching IC Y787/51/02 B78421P1853A005 Infineon PEF24624, PEF22624 Dimensions [mm]: Schematics: 5 7 N1 LineSide 2 4 ChipSide N3 N2 1 9 Marking: EPCOS middle block date code

B78381A1134A003

Abstract: FIN0198-X FIN0199-F FIN0231-J-E PEB2095 PEB20950
Contextual Info: ISDN Transformers RM 4 LP B78381A1134A003 UPN Interface 8,1 max. Application • Use in TE and PBX ■ Matched to Infineon ICs, e.g. PEB/PSB 2095 and 20950 13,8 max. Marking ■ Manufacturer, middle block of 4 5 Packing ■ 24-mm blister tape ■ Packing unit: 300 pcs.

PEF 22624

Abstract: PEF 24624 pef 24624 infineon pef* 22624 SOCRATES B78421A1852A003 socrates PEF 22624 INFINEON marking pef 22624 marking CODE n3
Contextual Info: EP13 Interfacetransformer Socrates Bis familie 18.06.2004 Preliminary Datasheet Ordering Code: Matching IC Y786/51/01 B78421A1852A003 Infineon Socrates PEF 22624, PEF 24624, PEF 24625 Dimensions [mm]: Schematics: 5 7 N1 LineSide 2 4 ChipSide N3 N2 1 9 Marking:

Contextual Info: PZTA42 NPN Silicon High-Voltage Transistors • High breakdown voltage • Low collector-emitter saturation voltage 4 3 2 • Complementary type: PZTA92 PNP Type PZTA42 Marking PZTA42 1=B 1 Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings

BSP50

Abstract: BSP51 BSP52 BSP60 BSP50-BSP52
Contextual Info: BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage 4 3 2 • Complementary types: BSP60 - BSP52 PNP 1 Type Marking Pin Configuration Package BSP50 BSP50 1=B 2=C 3=E 4=C - - SOT223 BSP51

PZTA92

Abstract: BCP52-16 E6327 PZTA42 VPS05163 PZTA92 E6433
Contextual Info: PZTA92 PNP Silicon High Voltage Transistor
High breakdown voltage 4
Low collector-emitter saturation voltage
Complementary type: PZTA42 NPN 3 2 1 Type Marking PZTA92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings

Contextual Info: PZTA92 PNP Silicon High Voltage Transistor
High breakdown voltage 4
Low collector-emitter saturation voltage
Complementary type: PZTA42 NPN 3 2 1 Type Marking PZTA92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings

Contextual Info: PZTA42 NPN Silicon High Voltage Transistor
High breakdown voltage 4
Low collector-emitter saturation voltage
Complementary type: PZTA92 PNP 3 2 1 Type Marking PZTA42 PZTA 42 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings

PZTA92 E6433

Contextual Info: PZTA42 NPN Silicon High Voltage Transistor
High breakdown voltage 4
Low collector-emitter saturation voltage
Complementary type: PZTA92 PNP 3 2 1 Type Marking PZTA42 PZTA 42 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings

sot143 Marking code 53

Contextual Info: BF772 NPN Silicon RF Transistor 3
For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF772 RAs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter

Contextual Info: BGX50A. Silicon Switching Diode Array
Bridge configuration
High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

sot143 marking code u1s

Abstract: BFP181 BGX50A E6327
Contextual Info: BGX50A. Silicon Switching Diode Array
Bridge configuration
High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

Contextual Info: BF772 NPN Silicon RF Transistor 3
For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF772 RAs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter

Contextual Info: SMBTA56M PNP Silicon AF Transistor 4
High breakdown voltage
Low collector-emitter saturation voltage 5
Complementary type: SMBTA06M NPN 3 2 1 VPW05980 Type Marking SMBTA56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT595 Maximum Ratings

Contextual Info: BSP60 . BSP62 PNP Silicon Darlington Transistors
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BSP50 . BSP52 NPN 3 2 1 Type Marking Pin Configuration BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223 BSP61 BSP 61 1=B

Contextual Info: BSP50 . BSP52 NPN Silicon Darlington Transistors
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BSP60 . BSP62 PNP 3 2 1 Type Marking Pin Configuration BSP50 BSP 50 1=B 2=C 3=E 4=C SOT223 BSP51 BSP 51 1=B

BCP95

Abstract: bcp9
Contextual Info: BDP954 PNP Silicon AF PowerTransistor • For AF driver and output stages • High current gain 4 3 2 • Low collector-emitter saturation voltage 1 • Complementary type: BDP953 NPN Type BDP954 Marking BCP954 1=B Pin Configuration 2=C 3=E 4=C - Package

BSP 450

Contextual Info: BSP60 . BSP62 PNP Silicon Darlington Transistors
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BSP50 . BSP52 NPN 3 2 1 Type Marking Pin Configuration BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223 BSP61 BSP 61 1=B

Contextual Info: PZTA14 NPN Silicon Darlington Transistors • For general AF applications 4 • High collector current • High current gain 3 2 1 Type Marking PZTA14 PZTA 14 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage

Contextual Info: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage • Low collector-emitter saturation voltage 4 3 5 • Two galvanic internal isolated NPN/PNP 2 6 1 Transistor in one package Tape loading orientation Top View 6 5 4 Marking on SC74 package

Contextual Info: BSP50 . BSP52 NPN Silicon Darlington Transistors
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BSP60 . BSP62 PNP 3 2 1 Type Marking Pin Configuration BSP50 BSP 50 1=B 2=C 3=E 4=C SOT223 BSP51 BSP 51 1=B

Elpida LPDDR2 Memory

Abstract: MT46H32M32LF MT46H64M16LF
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks

ELPIDA mobile dram LPDDR2

Abstract: LPDDR2 SDRAM micron infineon power cycling
Contextual Info: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Marking Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4