MARKING 3V3 Search Results
MARKING 3V3 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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MARKING 3V3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1n58171n8211n58181n821a+11 | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1n8211n821a1n8231n823a+16 | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1n58171n8211n58181n821a+11 | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1n58171n8211n58181n821a+11 | |
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Contextual Info: ISL6260, ISL6260B Data Sheet January 3, 2006 Multiphase Core Regulator for IMVP-6 Mobile CPUs Features Ordering Information TEMP. RANGE °C PART MARKING • Multiple Current Sensing Approaches Supported - Lossless DCR Current Sensing - Precision Resistive Current Sensing |
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isl6260isl6260bfn9162 | |
DIODE 85c 5V1
Abstract: 4v7 zener diode 1 watt
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do-41tcbzx85c3v3db-100diode 85c 5v1+1 | |
BZX85CContextual Info: Absolute Maximum Ratings AXIAL LEAD DO-41 DEVICE MARKING DIAGRAM TA = 25°C unless otherwise noted Parameter Value Power Dissipation Units 1.3 W -65 to +200 °C Operating Junction Temperature +200 °C Lead Temperature 1/16” from case for 10 seconds +230 |
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do-41bzx85c3v3190mm150mm+2 | |
diode zener 3v6 dip
Abstract: 4V7 ZENER DIODE D0-41 DO41 TCBZX85C3V3 TCBZX85C56 TCBZX85C DB030 4v7 zener diode 1 watt 5v1 do41
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do-41tcbzx85c3v3db-100diode zener 3v6 dip+7 | |
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Contextual Info: SEM IC O N DU C TO R 1.3 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO41 Absolute Maximum Ratings DEVICE MARKING DIAGRAM TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature |
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do-41tcbzx85c3v3db-030d0-41 | |
isl6260
Abstract: isl6260crz ISL6260CRZ-T SL6260 ISL6260BCRZ ISL6260B ISL6260BCRZ-T ISL6208 geyserville REGULATOR IC 7832
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isl6260isl6260bisl6260crzisl6260bcrz+7 | |
MINI-MELF DIODE BLUE CATHODE
Abstract: LL-34 zener diode
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ll-34db-100mini-melf diode blue cathodell-34 zener diode | |
SEM 2006
Abstract: axial zener diodes marking code 77
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do-41tcbzx85c3v3sem 2006axial zener diodes marking code 77 | |
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Contextual Info: TAK CHEONG SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings AXIAL LEAD DO35 TA = 25°C unless otherwise noted Parameter DEVICE MARKING DIAGRAM Value Units 500 mW -65 to +200 °C Operating Junction Temperature |
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do-35tcbzx79txxxtcbzx79cxxxtcbzx79bxxx+4 | |
BZX84-3V3 z14
Abstract: c5v6 BZX84 bzx84-3v3 BZX84C BZX84-C27 c4v7 bzx843v3 c6v2
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bzx84cbzx84bzx84-c27bzx84-3v3 z14+5 | |
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Contextual Info: NCP508 Very Low Noise, Fast Turn On, 50 mA Low Dropout Voltage Regulator http://onsemi.com MARKING DIAGRAM 4 5 12 3 5 xxx MG G SC70−5/SC−88A/SOT−353 SQ SUFFIX CASE 419A M The NCP508 is a 50 mA low noise voltage regulator, designed to exhibit fast turn on time and high ripple rejection. Each device |
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ncp508sc-88asc70-5/sc-88a/sot-353ncp508/d | |
DIODE BZG 03c
Abstract: DIODE BZX 85c marking code vishay label 1N4148 do214ac KZE sot23 Vishay diodes code marking 1N47A 1N5 diode 1N52B DIODE BZG
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1n4148bzx55cbzx85cot143+15 | |
1N4148 DO35
Abstract: 1N47A 1N52B 1N5 B 1N5 diode 55C 2v4 VISHAY MARKING BZG bzx55c v4148 SOD80
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1n4148bzx55cbzx85cbzt03c220+11 | |
1N47A
Abstract: 1N52B
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1n4148bzx55cbzx85cbzt03c220+4 | |
BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
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OCR Scan |
2004c2004s2004dz5250b+11 | |
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Contextual Info: SMD ESD Protection Diode CPDV5-3V3UP RoHS Device Features -IEC61000-4-2 Level 4 ESD protection. SOT-353 -Working voltage: 3.3V 0.087 2.20 0.079(2.00) -Low leakage current. -Low operating and clamping voltages. 0.053(1.35) 0.045(1.15) Mechanical data -Case: SOT-353 standard package ,molded plastic. |
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-iec61000-4-2ot-353mil-std-750qw-bp025 | |
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Contextual Info: SMD ESD Protection Diode CPDV5-3V3UP RoHS Device Features -IEC61000-4-2 Level 4 ESD protection. SOT-353 -Working voltage: 3.3V -Low leakage current. 0.087 2.20 0.079(2.00) -Low operating and clamping voltages. 0.053(1.35) 0.045(1.15) Mechanical data -Case: SOT-353 standard package ,molded plastic. |
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-iec61000-4-2ot-353mil-std-750qw-bp025 | |
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Contextual Info: SMD ESD Protection Diode CPDT6-3V3UP RoHS Device Features SOT-23-6 -IEC61000-4-2 Level 4 ESD protection. -Working voltage: 3.3V 0.119 3.02 0.111(2.82) -Low leakage current. -Low operating and clamping voltages. 0.067(1.70) 0.059(1.50) Mechanical data 0.079(2.00) |
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ot-23-6-iec61000-4-2mil-std-750qw-bp030 | |
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Contextual Info: SMD ESD Protection Diode CPDV5-3V3UP-HF RoHS Device Halogen Free Features SOT-353 -IEC61000-4-2 Level 4 ESD protection 0.087 2.20 0.079(2.00) -Working voltage: 3.3V -Low leakage current. 0.053(1.35) 0.045(1.15) -Low operating and clamping voltages. Mechanical data |
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ot-353-iec61000-4-2mil-std-750qw-jp023 | |
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Contextual Info: SMD ESD Protection Diode CPDV5-3V3UP-HF RoHS Device Halogen Free Features SOT-353 -IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). 0.087(2.20) 0.079(2.00) -Working voltage: 3.3V -Low leakage current. 0.053(1.35) 0.045(1.15) -Low operating and clamping voltages. |
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ot-353-iec61000-4-2mil-std-750qw-jp023 | |