MARKING 3JS Search Results

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

BCV62C

Contextual Info: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks

Contextual Info: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks

Q62702-C2158

Abstract: Q62702-C2159 Q62702-C2160 transistor marking T2 C2160 H12E k 30 transistor transistor T1 marking 3JS IC marking vt
Contextual Info: PNP Silicon Double Transistors BCV 62 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C

BCV62

Contextual Info: BCV 62 PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage C2 1 C1 (2) Tr.1 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Ordering Code

transistor t2

Abstract: 61 TRANSISTOR Q62702-C2158 transistor marking T2 marking BCV Q62702-C2159 Q62702-C2160 Q62702-C2155 transistor T1 Q62702-C2157
Contextual Info: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C

VPS05178

Contextual Info: BCV 62 PNP Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking

e2 marking

Abstract: MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls
Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

transistor marking T2

Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

BCV62B

Abstract: marking 3ks BCV62 BCV62A BCV62C VPS05178
Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

MD0050931

Abstract: 8M2021 8Z0037
Contextual Info: s M m 8M =e x - \ s u à - • □ y 'h - x - f " j * Small Lever «Rocker Switches X m '7 m 8M 7 Æ - J U w \ — •D'y*— 7 .-f'y ? H ì,8 A ^'l'7° 7)3js:#(r S fÉ S B lis æ i o t ' f c g H Â c O ' y - V ^ ' U ± ± i f > i Ê L f c 8 m ^ U '^ - • P - y ^ - ^ f f l Ä L T *

EIA-296-E

Abstract: marking 3JS
Contextual Info: Type 2JS / 3JS Time-lag Fuse Series JSD0600 Electrical Characteristics Testing current 5 x 15mm Glass Tube UL/CSA STD. 248-14 Blow Time Minimum Maximum 100% 4 hrs. N/A 135% N/A 1 hr 200% 3 sec 20 sec 500% 100 msec 1.5 sec 1000% 30 msec 300 msec Safety Agency Approvals

JS 027

Abstract: marking JS P
Contextual Info: 5 x 15mm Glass Tube RoHS Compliant Type 2JS / 3JS Time-lag Fuse Series WJSD0505-A1 Catalog Number Electrical Characteristics UL/CSA STD. 248-14 Blow Time RoHS Ampere Suffix Rating Typical Volt-drop Melting I2T Melting I2T Cold @100% In < 10 mSec @10 In Resistance

Contextual Info: 5 x 15mm Glass Tube RoHS Compliant Type 2JS / 3JS WJSD0505-A1 Time-lag Fuse Series Catalog Number Electrical Characteristics Testing current UL/CSA STD. 248-14 Blow Time RoHS Ampere Suffix Rating Typical Volt-drop Melting I2T Cold @100% In < 10 mSec Resistance

RT5P14BC

Abstract: rt5p1
Contextual Info: RT5P14BC Transistor W ith li^sistor Fur Sw itching Application Silicon P N l5Ep itax ial rIV| c OUTLINE DRAWING DESCRIPTION Unit; mm RT.r)P 14B C is ;i finn c h ip tianSLStOF V>jth h u ill ín b ia s ?£ 1Í 3JSÏ re s is to r, M PN ty p e is R T 6 N 1JB C .

EVM1ES

Contextual Info: * y V * W ' S . X lj 3 . - h Surface Mount Trim m er Potentiometers . Surface Mount Trimmer Potentiometers •np#D¥ï!R>È Explanation of Part N u m b ers *# < * m A =t- * 6ftjS 7 n V 11 'J > ' f zm 3JS-f- EVM 7J. 7L 2 m 3 « + EVM IX, 2X 3 m G \V * ~ H S 7

MARKING 3FS

Abstract: MARKING CODE 21E SOT23 marking 3ks
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29

transistor packing code 3f

Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

MARKING 3FS

Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)

top marking 1B sot23

Abstract: BC857 3fs TSLP3 1B marking transistor
Contextual Info: BC857.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847.-BC850. NPN • Pb-free (RoHS compliant) package

marking code MS SOT323

Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)