MARKING 39A Search Results

KIA7039AP

Abstract: 39AP 7039ap transistor KIA-70 KIA70
Contextual Info: SEMICONDUCTOR KIA7039AP MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KIA 70 39AP 816 No. Item 1 Trade Name Marking Description KEC Analog Integrated Circuit KIA 2 70 Series Name 39AP Device Name KIA7039AP Device Name 3 4 98.06.23

ZP33A

Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Contextual Info: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=

chip resistor marking

Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Contextual Info: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)

39CA

Abstract: DN 6V8A 6v8a 6v8ca transil sm6t 6V8C 39CA 144 33cA SM6T 68CA SM6T15 DW
Contextual Info: rzj SURFACE MOUNT DEVICES SGS-THOMSON iiiQ gK iiLi(gra©R!io©i GENERAL PURPOSE & INDUSTRIAL TRANSIENT VOLTAGE SUPPRESSORS «TRANSIL» Marking Type *RM @ VRM @ V(BR * (V) V(CL) @ Ipp 1 ms expo •r max Unidirec­ tional 600 W / Bidirec­ tional Unidirec­

Contextual Info: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 400 Watt Peak Power ■ Dimension Dim SMA DO-214AC ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 3.99 4.50 0.157 0.177 B 2.54 2.79 0.100

Contextual Info: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BA XX

39ca

Abstract: 6V8C 6v8ca sm4t 6V8A 415 6V8 33CA 39CA 144 transil marking VX 15CA
Contextual Info: rZ 7 SGS-THOMSON ^ 7# SURFACE MOUNT DEVICES H O C M ilU t g « ! GENERAL PURPOSE & INDUSTRIAL SOD 6 /SOD 15 SOD 6 SOD 15 TRANSIENT VOLTAGE SUPPRESSORS «TRANSIL» Marking Type •RM VRNI @ V BR * (V) V(CL) Ipp 1 ms expo <R max Unidirec­ tional 400 W

D 71055

Abstract: Si5441DC MAX 71055 71055
Contextual Info: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 –20 20 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BA XX

TZP27B

Abstract: TZP33A tzp 33a zp 33a TZP10A zener 1n 4148 957B R 958B zener 56c marking CODE S139
Contextual Info: Part Marking <Switching D io d e s <Rectifier D io d e s) DO-35 GSD) DO-34<MSO) u§p Part No. M arking Part No. M arking P art No. M arking P art No. White 1S S130 White 1S2471 Black 1SS131 Black 1 S S 252 Black 1S 2472 Green 1S S132 Green 1S S253 Green 1S 24 73

Contextual Info: DMN3010LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Green Product Summary V BR DSS RDS(ON) 30V 9.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V Features ID TC = +25°C 43A 39A density end products This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMN4010LK3 Green Product Summary Features RDS ON max ID max TC = +25°C • • Low Input Capacitance 11.5mΩ @ VGS = 10V 39A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 14.5mΩ @ VGS = 4.5V 35A • Halogen and Antimony Free. “Green” Device (Note 3)

Contextual Info: FDMS3662 N-Channel Power Trench MOSFET 100V, 39A, 14.8mΩ Features General Description „ Max rDS on = 14.8mΩ at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: HUF76633S3ST_F085 N-Channel Logic Level UltraFET Power MOSFET 100V, 39A, 35mΩ D D Features „ Typ rDS on = 28mΩ at VGS = 10V, ID = 39A „ Typ Qg(tot) = 56nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB

FDP39N20

Contextual Info: TM FDP39N20 200V N-Channel MOSFET Features Description • 39A, 300V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 38 nC)

2C66

Abstract: ML marking t41l 1c51 MAXIM COUNTRY OF ORIGIN 3F61 19L4W 0532G
Contextual Info: MIL+-195CU/139B ● SUPE3SED1NG KH,-3-195C@39A 31 M1LIT4RI W% TRAJISISMR, TYPE This the tnr, Ar!Jv. 1. SCOPE 1.1 w. trar,ai. for me 1.3 Absoluta-mximm 1.4 Prim.n for .,. W the Nwv. in chaPPer PNP, SILICON JAN-2N1119 k.=” . mmr.awd k and 1s mda- the and

HEXFET D2PAK

Abstract: D2Pak Package dimensions diode marking code 421
Contextual Info: PD- 95587 IRL3302SPbF HEXFET Power MOSFET D RDS on = 0.020Ω G • Lead-Free www.irf.com VDSS = 20V S ID = 39A 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com

Contextual Info: PD- 95587 IRL3302SPbF HEXFET Power MOSFET D RDS on = 0.020Ω G • Lead-Free www.irf.com VDSS = 20V S ID = 39A 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com

FDPF39N20

Abstract: 200v mosfet FDP39N20
Contextual Info: TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description • 39A, 200V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description • 39A, 200V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.