zt751
Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
Contextual Info: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30
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3055L
Abstract: f 3055l sot89 Marking mosfet fr5 sot89 FHK3055L sot89 17
Contextual Info: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK3055L N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻 Rugged and reliable. 高可靠性
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SSM3055L
Abstract: MosFET
Contextual Info: SSM3055L 2.8A , 60V , RDS ON 100 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-223 The SSM3055L utilized advanced processing techniques to achieve the lowest possible on-resistance,
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3055LG
Abstract: 3055L Power logic MOSFET SOT-223 NTF3055L108T1G Power MOSFET SOT-223 NTF3055L108 NTF3055L108T1 NTF3055L108T3 NTF3055L108T3G NTF3055L108T3LF
Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 120 mW Features
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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3055l
Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 120 mW
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3055L
Abstract: 3055l104 351 D-PAK MARKING CODE 351 D-PAK
Contextual Info: NTD3055L104 Advance Information Power MOSFET 12 Amps, 60 Volts, Logic Level N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 12 AMPERES
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3055l
Abstract: f 3055l NTF3055L108 NTF3055L108T1 NTF3055L108T3 NTF3055L108T3LF
Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES
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3055L
Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES
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APM3055L
Abstract: 3055L APM3055L voltage APM3055L equivalent APM3055L datasheet J-STD-020A marking 3055l f 3055l A6 sot223
Contextual Info: APM3055L N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =100mΩ(max) @ VGS=10V RDS(ON)=200mΩ(max) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages
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3055L
Abstract: 3055LG NTF3055L108 NTF3055L108T1 NTF3055L108T1G NTF3055L108T3 NTF3055L108T3G NTF3055L108T3LF Power logic MOSFET SOT-223
Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V
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3055LG
Abstract: NVF3055L108 3055L NVF3055L108T1G
Contextual Info: NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 120 mW
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3055L
Abstract: 3055LG
Contextual Info: NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 120 mW
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3055L
Abstract: f 3055l NTF3055L108 NTF3055L108T1 NTF3055L108T1G NTF3055L108T3 NTF3055L108T3G NTF3055L108T3LF NTF3055L108T3LFG marking 3055l
Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 120 mW
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3055LG
Contextual Info: NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 120 mW
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3055L
Abstract: 3055LG
Contextual Info: NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 120 mW
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3055L
Abstract: f 3055l
Contextual Info: APM3055LU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =75mΩ(typ.) @ VGS=10V RDS(ON)=100mΩ(typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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3055LG
Contextual Info: NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 120 mW
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marking 3055l
Abstract: MMFT3055ELT1 amp 3055l 3055L
Contextual Info: Order this data sheet by MMFT3055ELT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount MMFT3055ELT1 Motorola Preferred Device This advanced E-FET is a TMOS power MOSFET designed to
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3055l104
Abstract: AN569 NTD3055L104 NTD3055L104T4 3055L
Contextual Info: NTD3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • • • • •
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transistor Amp 3055L
Abstract: 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569
Contextual Info: MOTOROLA Order this document by MMFT3055EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055EL Motorola Preferred Device SOT–223 for Surface Mount MEDIUM POWER LOGIC LEVEL TMOS FET
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