MARKING 25AC Search Results

AT91M40400

Contextual Info: Errata Sheet V3.2 This errata sheet refers to devices with the following marking: AT91M40400 25AC, 25AI or 33AC Internal product reference 55568A • I/O Pads are not 5V Tolerant • One Half-cycle NUB on First Access to a Chip Select Bank • EBI Abort Generation

Contextual Info: Type TDL • Solid Tantalum Capacitors MallorY Tough Plastic Case UL94V0 Flammability Rating Laser Marking Clarity and Permanence Low Cost Low DCL Low ESR & Impedance Temperature Stable Long Shelf Life High Shock & Vibration GENERAL SPECIFICATIONS Capacitance Tolerance:

S2L20U

Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE Package : AX10 S2L20U Unit : mm W eight 0.65g Typ> 2 0 0 V 1.5A Feature 26.5 • Low Noise • tnr=35ns • s v -r x • trr=35ns (.1 • 7 5 'T /n - J b •iS te .F A (R 4 - 2 - * «•ríüíiidíiiiiM Marking

JIS F05 connectors

Contextual Info: SMF05 SEMTECH Preliminary - October 15, 1998 TVS Diode Array For ESD & Latch-Up Protection FEATURES The SMF series TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD and other voltage-induced transient events. They

2sa1235

Abstract: ha15090
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unlt mm Mitsubishi 2SA1235 is a super mini silicon PNP epitaxial type transistor designed for low frequency voltage amplify application.

sot23 transistor marking y2

Abstract: 2N3905 MOTOROLA ts 3110 TRANSISTOR T29 marking X062 MMBT3906-2A 25CC 2N3905 2N4123 2N4401
Contextual Info: MOTOROLA SC ÍXSTRS/R F> 6367254 MOTOROLA SC Tb !>F|b3b75S4 G O ñ E D m <X S T R S ¿ R „ F ? 9 6D 8 2 0 4 1 T'Z^'/S MAXIMUM RATINGS Rating Sym bol Value U nit Coilector-Em itter Voltage VCEO 40 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage

burr-brown electrometer amplifiers

Contextual Info: SURR —BR0 üJN CORP H E ] I1 7 3 1 3 L .C n ni • -urjjjjbü q üuJ,5331 T B U R R -B R O W N - 1 7 I I COMPONENTS e! - / S ' - OPA128SM/883B REVISION NONE JULY, 1988 D ifet® Electrometer-Grade MILITARY OPERATIONAL A M PLIFIER

MARKING 5C0

Contextual Info: T L C O M P A T IB L E * ECOVERY GENERATOR # T2L in p u t and o u tp u t # Pulse w id th s stable and precise # High o u tp u t d uty cycles # 8-pin Space Saver package fo r at least 10ns to o b ta in the d e sire d o u tp u t pulse. The d uration of the p o sitive in p u t pulse, a fte r th is tim e, has no

KAH marking

Contextual Info: International IO R Rectifier pdhims IR F R /U 9 3 1 0 P R ELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated V qss — 400V ^DS(on) = 7 .0 Q

marking L0KA

Abstract: LP2985AIM5-5.0* LOUA LOUA sot23 LOra sot23 Lp2985im5-3.3 LORB marking loub
Contextual Info: tß Semiconductor LP2985 Micropower SOT, 150 mA Low-Noise Ultra Low-Dropout Regulator Designed for Use with Very Low ESR Output Capacitors General Description Features The LP2985 is a 150 mA, 1ixed-output voltage regulator de­ signed to provide ultra low-dropout and low noise in battery

sot23 transistor marking 12E

Contextual Info: M O T OR O L A SC X S T R S /R F 12E D I t>3b72SM GGf lt iOGZ 1 | M AXIM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VcBO 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Symbol Max Unit PD 225 mW Rating Unit MMBTH10L CASE 318-03, STYLE 6

Contextual Info: h e d I i 7 3 i a t s 0 D i 5 3 cifl a | COMPONENTS -BROUN CORP ^ - b u rr-b ro w n « r e a j-H -M 'p » O P A 6 0 2 /8 8 3 B l OPA6Q2SM/883B REVISION NONE JULY, 1988 High-Speed Precision D ifet MILITARY OPERATIONAL AMPLIFIER

TRANSISTOR AS3

Abstract: motorola darlington power transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP52T1 NPN Sm all-Signal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The

diode pj 70

Abstract: pj 70 diode pj 417
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diode BAW156LT1 This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAW156LT1 to order the 7 inch/3,000 unit reel

Contextual Info: MOTOROLA SC XSTRS/R F laE D M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 12 Vdc 'c 500 mAdc Sym bol M ax Unit PD 225 mW 1.8 mW/°C Ro ja 556 °c/w Pd 300

Contextual Info: MAXIMUM RATINGS Rating Symbol Value Unit C o lle ctor-E m itter Voltage v CEO -4 5 Vdc C ollector-Base Voltage v CBO -6 0 Vdc v EBO - 5 .0 Vdc 'c - 800 m Adc Em itter-Base Voltage C ollector C urrent — C ontinuous BCW68GLT1 CASE 318-07, STYLE 6 SOT-23 TO-236AB

1RF9540

Abstract: IRF9540 application smd diode marking 78A IRF9540 rasistor 12v CFL DIODE marking ED 78A ScansUX102 IRF9540 mosfet
Contextual Info: PD-9.421C International E?R R ectifier IRF9540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ d s s ~ -1 0 0 V

Contextual Info: P D - 9 .1 6 1 0 A International IO R Rectifier IRFR/U5505 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5505 • Straight Lead (IRFU5505) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated

BC846BL

Abstract: BC847AL BC847CL 25CC BC846 BC846AL BC847 BC847BL BC848 BC848AL
Contextual Info: I 15 E D M A X IM U M RATINGS b3 b? as 4 QOflSöflM 1 I Sym bol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage V cB O 80 50 30 V Ve b o 6.0 6.0 5.0 V ic 100 100 100 mAdc Rating Emitter-Base Voltage Collector Current — Continuous

Contextual Info: SILICON HOT-CARRIER DIODE SCHOTTKY BARRIER DIODE . . . d esig n ed p rim a rily fo r h ig h -e fficie n cy UHF and VHF d e te cto r a p p lic a ­ tio n s. R eadily adap ta b le to m a ny o th e r fa st s w itc h in g RF and d ig ita l a p p lic a ­ tio n s . S u p p lie d in an ine xp e nsive p lastic package fo r low -co st, h ig h -v o lu m e

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN Sm all-Signal Darlington Transistor M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The

Contextual Info: S Ì1024X Vishay Siliconix VISHAY New Product Dual N-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY rDS(on) (&) lD (mA) 0.70 @ V GS = 4.5 V 600 0.85 @ V GS = 2.5 500 V d s (V) 20 M OSFETs V 1.8-V Rated (£) 350 1.25 @ VqS = 1 8 V ESD Protected 2000 V

Datecode nl

Abstract: marking code nt R20 marking SRAS820 RPB 202
Contextual Info: TAIWAN SEM ICONDUCTO R s ' ;p b . SRAS820 - SRAS8150 8.0 AMPS. Surface Mount Schottky Barrier Rectifiers D*PAK RoHS COMPLIANCE $ .insidi H -fS sf« *— •M S ll.lo 'i W iM ii Features -v-Y- 4«• I ja s s v s A i; For s urface mou nted a ppl icatio n Ideal for automated pick & place

Contextual Info: T O SH IB A 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • t Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO VCEO Ve BO